• 제목/요약/키워드: 전계 방출

검색결과 406건 처리시간 0.024초

기능성 Diamond 소자

  • 이상헌
    • 전기의세계
    • /
    • 제53권8호
    • /
    • pp.20-23
    • /
    • 2004
  • 현재 사용되고 있는 전자디바이스 소자의 기능은 급속도로 변화하고 있는 정보화 사회로의 진입이라는 시대적 요구와 함께 필요한 기능과 수요를 확보하기 위하여 지속적으로 발전하고 있다. 현재까지 연구개발 결과로 몰리브덴과 실리콘으로부터 전계에 의한 전자 방출을 응용한 Flat pannel display (FPD)의 실현 가능성은 확보하였으나, 전극의 첨예화를 기하는 기술이 아직 까지 개발 도상 단계에 있으며, 소자의 경량화와 저전압 구동의 실현을 위하여 해결하여야 할 많은 과제를 안고 있다. (중략)

  • PDF

몰리브덴 팁 전계 방출 표시 소자의 프릿 실링에 있어서 분위기 기체가 전계 방출 성능에 미치는 영향 (Influence of Ambient Gases on Field Emission Performance in the Frit-sealing Process of Mo-tip Field Emission Display)

  • 주병권;김훈;정재훈;김봉철;정성재;이남양;이윤희;오명환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
    • /
    • 제48권7호
    • /
    • pp.525-529
    • /
    • 1999
  • The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

  • PDF

수성 고분자 - 탄소나노튜브 복합 분산 용액을 이용한 전계 방출 소자의 제작

  • 정혁;김도진
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2011년도 춘계학술발표대회
    • /
    • pp.66.2-66.2
    • /
    • 2011
  • A polymer-based multi-walled carbon nanotube (MWCNT) field emission device was fabricated from a composite dispersion of MWCNTs and waterborne polymethyl methacrylate (PMMA). The waterborne PMMA synthesized through the emulsion polymerization method was added to minimize the reagglomeration of dispersed MWCNTs with surfactants in water, and increase the adhesion between the and the substrate. The field emission properties of the fabricated device were optimized by adjusting the density of the emitter and the adhesion between the MWCNTs and the substrate. These were done by controlling the polymer concentration added to the MWCNT dispersion, as well as the amount of spray coating on the substrate. The results confirm the successful fabrication of a polymer-based MWCNT field emission device with a low field of 1.07 $V/{\mu}m$ and a good electric field enhancement factor of 2445. The device was fabricated by adding 0.8 mg/mL of polymer solution to the MWCNT dispersion and applying 20 cycles of spray coating. Application of this same MWCNT/polymer composite solution to a flexible polymer substrate also resulted in the successful fabrication of an electric field emission device with uniform emission and long time stability.

  • PDF

진공아크방전으로 제작된 다이아몬드상 탄소 박막이 코팅된 실리콘 전계 방출 소자의 전계 방출 특성 (Field emission properties of the silicon field emission arrays coated with diamond-like carbon film prepared by filtered cathodic vacuum arc technique)

  • 황한욱;김용상
    • 한국전기전자재료학회논문지
    • /
    • 제13권4호
    • /
    • pp.326-331
    • /
    • 2000
  • We have fabricated the field emitter arrays coated with diamond-like carbon (DLC) films that improved the field emission characteristics. The nitrogen doped DLC films are prepared by the filtered cathodic vacuum are (FCVA) tehnique. The activation energy of the nitrogen doped DLC films are derived from electrical conductivity measurements. The silicon field emission arrays (FEAs) were prepared by the VLSI technique. The turn-on field was rapidly decreasing and the emission current was remarkably increasing the DLC-coated FEAs than the non-coated silicon FEAs. In the nitrogen doped FEAs, the turn-on field decreased and the emission current increased with increasing the nitrogen found out the field emission current and the work function of the DLC-coated FEAs was remarkably decreased than that of the non-coated silicon FEAs. As nitrogen doping concentrations are increased the work function of FEAs is decreased and the field emission properties are improved in nitrogen doped DLC-coated FEAs. This phenomenon in due the fact that the Fermi energy level moves to the conduction band by increasing nitrogen doping concentration.

  • PDF