• Journal of the Korean Society for Precision Engineering
• /
• v.16 no.4 s.97
• /
• pp.13-18
• /
• 1999

섬유강화금속적층재(Fiber Reinforced Metal Laminates. FRMLs)는 고강도금속과 섬유강화복합재료(Fiber Reinforced Composite Materials)를 적층한 새로운 종류의 하이브리드 재료이다. 국산 아라미드 섬유인 헤라크론(Heracron, 코오롱)과 국내 복합재료 제작기술(한국화이바)을 사용하여 섬유강화금속적층재를 제작하고, 이를 HERALL(Heracron Reinforced Aluminum Laminate)이라 명명하였다. HERALL(Heracron Reinforced Aluminum Laminate)의 피로균열성장특성 및 피로균열진전 방해기구를 ARALL(Aramid-fiber Reinforced Aluminum alloy Laminates) 및 Al 2024-T3과 비교해석하였다. HERALL과 ARALL은 균열진전을 저지하는 아라미드 섬유로 인해 뛰어난 피로균열성장특성 및 피로저항성을 보여주었다. 아라미드 섬유의 균열브리드징으로 인한 $K_{max}$의 감소량과 Al 2024-T3의 균열닫힘으로 인한 $K_{max}$의 증가량을 구할 수 있는 응력-COD법을 사용하여 실제로 균열성장에 영향을 준 유효응력확대계수범위를 측정하였다. 균열선단으로부터 균열을 가공하면서 COD 변화량을 측정하여 균열브리징 영역을 구하였다.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2005.06a
• /
• pp.176-177
• /
• 2005

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.377-385
• /
• 1996

ZnS/ZnSe superlattices were prepared on GaAs (100) substrates by hot wall epitaxy, an the structures were analyzed using x-ray diffraction. It is shown that the x-ray diffraction of the strained superlattice gives very useful information about the thickness of each layer, strain, interdiffusion, and the fluctuation of the superlattice period. Interdiffusion length of the S and Se is estimated to be less than $2\;{\AA}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.2-2
• /
• 2010

텐덤형 태양전지는 다양한 에너지 대역을 동시에 흡수할 수 있도록 제작할 수 있어 단일접합 태양전지에 비해 높은 에너지변환효율을 기대할 수 있다. 본 연구에서는 GaAs를 기반으로 양자점 혹은 양자우물 구조를 이용한 고효율 텐덤형 태양전지를 설계하고, 완충층 및 활성층의 특성을 분석하였다. 분자선 단결정 성장 장비를 이용하여 GaAs 기판 위에 메타모픽 (metamorphic)성장법을 이용하여 convex, linear, concave 형태로 조성을 변화시켜 $In_xAl_1-_xAs$ 경사형 완충층을 성장한 후 그 특성을 비교하였다. 또한, 최적화된 경사형 완충층 위에 1.1 eV와 1.3 eV의 에너지 대역을 각각 흡수할 수 있는 적층 (5, 10, 15 층)된 InAs 양자점 구조 또는 InGaAs 양자우물구조를 삽입하여 p-n 접합을 성장하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 GaAs층의 두께 (20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. 그 결과, 경사형 완충층을 통해 조성 변화로 인한 결함을 최소화하여 다양하게 조성 변화가 가능한 고품위의 구조를 선택적으로 성장할 수 있었으며, 적층의 양자점 구조 및 양자우물 구조를 이용해 고효율 텐덤형 태양전지의 구현 가능성을 확인하였다.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.1
• /
• pp.25-28
• /
• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.2
• /
• pp.185-193
• /
• 1996

$2.5^{\circ}\;and\;5^{\circ}$ tilted (100) Si wafer were oxidized in dry oxygen, and the differences in thermal oxidation behavior and oxidation induced stacking faults (OSF) between specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 900 to $1200^{\circ}C$ showed that the oxidation rates of the tilted (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) Si, $2.5^{\circ}$ off (100) Si and $5^{\circ}$ off (100) Si were 27.3, 25.9, 27.6 kcal/mol and those on the linear rate constant, B/A were 58.6, 56.6, 57.6 kcal/mol, respectively. Also, considerable decrease in the density of oxidation induced stacking faults for the $5^{\circ}$ off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer, and the angle of stacking faults were changed with tilted angles.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2004.12a
• /
• pp.50-51
• /
• 2004

• Proceedings of the Korean Magnestics Society Conference
• /
• 2006.06a
• /
• pp.140-141
• /
• 2006

• Proceedings of the Korean Vacuum Society Conference
• /
• 2001.02a
• /
• pp.59-60
• /
• 2001

• Journal of the Korean Vacuum Society
• /
• v.5 no.2
• /
• pp.133-138
• /
• 1996

Epitaxial cubic silicon carbide films have been deposited on carbonized Si(001) substrates using the single precursor 1, 3-disilabutane in the temperature range 900-$1000^{\circ}C$ under high vacuum conditions. The films grown were characterized by in situ RHEED, XPS, XRD, x-ray pole figure, SEM, and TEM. The results show that epitaxial cubic SiC films with smooth morphology and good crystallinity were formed in this temperature range. The single precursor 1, 3-disilabutane has been found suitable for the epitaxial growth of cubic SiC on Si(001) substrates.