• Title/Summary/Keyword: 저항 분포도

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A study on formation mechanism of a microstructure and on morphological stability of a Ni-Cr anode improved creep resistance (Creep 저항성이 향상된 Ni-Cr anode의 미세조직 형성 mechanism 및 구조 안정성에 관한 연구)

  • 정도원;이인성;이덕열;임희천
    • 한국전기화학회:학술대회논문집
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    • 2002.07a
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    • pp.251-258
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    • 2002
  • [ $Ni-10wt.\%Cr$ ] green sheet를 불활성분위기로 $900^{\circ}C$까지 승온시킨 다음 부분산화$(P_{H2}/P_{H2O}=10^{-2})$$1100^{\circ}C$에서 3시간 환원처리를 시키는 소결공정으로 Ni-Cr 고용체 기지 주변에 작은 $Cr_2O_3$ 알갱이가 고르게 분포하는 anode(Anode Sintered in Partial oxidation - Reduction atmosphere; ASPR)를 제조하였으며, creep 변형률이 $2.8\%$로서 미세구조에 따른 creep 특성의 비교를 위해 기존의 환원분위기에서만 소결시킨 anode(Anode Sintered in Reduction atmosphere only; ASR)의 $11\%$보다 우수한 creep 저항성을 나타내었다. $Cr_2O_3$ 알갱이가 분산된 미세구조른 부분산화 시 Cr과 Ni의 산화속도 및 확산속도의 차이로 인해 형성되는 것으로 사료되며, creep 전${\cdot}$후 ASPR 시편의 SEM 및 기공률 분석결과 매우 안정적으로 그 형상 및 구조를 유지하고 있음을 확인할 수 있었다. 또한 ASPR 시편의 전기전도도는 약 $15\times10^6\;S/m$로서 기존 ASR 시편의 전기전도도와 유사함을 알 수 있었다.

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Occurrance of Peanut Web Blotch Caused by Phoma arachidicola Marasas, in Korea (Phoma arachidicola Marasas 에 의한 땅콩 그물무늬병의 발생)

  • Park, Kyung-Seok;Chung, Bong-Koo
    • The Korean Journal of Mycology
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    • v.19 no.3
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    • pp.226-230
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    • 1991
  • Since it was firstly identified in Suweon during the growing season in 1986, this fungus of peanut web blotch, Phoma arachidicola, has been widely distributed to the major peanut growing areas throughout the whole country. Disease symptoms appeared on the adaxial surface of peanut like ink drop lesion with net form, and finally turned to dark brown blotch. The fungus isolated was revealed to form dark brown colonies on PD agar at $28^{\circ}C$, resulting 4.5 mm mycelial extension per day. Hyaline conidia were observed to be either aseptate or single septeted, and sized with the ellipsoidal to cylindrical shape $3.0{\times}14.5\;{\mu}m$. The optimum temperature was ranged 24 to $26^{\circ}$ in the grwoth. Virginia type peanut was more resistant to the fungus than Spainish type in the field reaction.

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Effects of As Ions Implanted in Si Substrates on the Titanium -Silicides Formation (Si기판에 주입된 As이온이 Titanium-Silicides 형성에 미치는 영향 -Ⅰ-)

  • Chung, Ju-Hyuck;Choi, Jin-Seog;Paek, Su-Hyon
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.6
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    • pp.57-62
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    • 1989
  • Sputter-deposited Ti film on Si substrates which were implanted with various doses of As was annealed at the temperature of 600-900$^{circ}C$ for 20 sec in Ar atmosphere. The sheet resistance of Ti-silicides was measured by 4-point probe, the thickness by $alpha$-step, and observed the behavior of As dopant in Si substrates by ASR. With increasing As doses, the thickness of Ti-silicides decreased and the sheet resistance of Ti-silicides increased. And we discussed the relationships between the above results and the factors of Si diffusion.

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An Analysis of Crack Growth Rate Due to Variation of Fatigue Crack Growth Resistance (피로균열전파저항의 변동성에 의한 균열전파율의 해석)

  • Kim, Seon-Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.23 no.7 s.166
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    • pp.1139-1146
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    • 1999
  • Reliability analysis of structures based on fracture mechanics requires knowledge on statistical characteristics of the parameter C and m in the fatigue crack growth law, $da/dN=C({\Delta}K)^m$. The purpose of the present study is to investigate if it is possible to predict fatigue crack growth rate by only the fluctuation of the parameter C. In this study, Paris-Erdogan law is adopted, where the author treat the parameter C as random and m as constant. The fluctuation of crack growth rate is assumed only due to the parameter C. The growth resistance coefficient of material to fatigue crack growth (Z=1/C) was treated as a spatial stochastic process, which varies randomly on the crack path. The theoretical crack growth rates at various stress intensity factor range are discussed. Constant ${\Delta}K$ fatigue crack growth tests were performed on the structural steel, SM45C. The experimental data were analyzed to determine the autocorrelation function and Weibull distributions of the fatigue crack growth resistance. And also, the effect of the parameter m of Paris' law due to variation of fatigue crack growth resistance was discussed.

Thermal Characteristics according to Trench Etch angle of Super Junction MOSFET (Super Junction MOSFET의 트렌치 식각 각도에 따른 열 특성 분석에 관한 연구)

  • Kang, Ey Goo
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.532-535
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    • 2014
  • This paper analyzed thermal characteristics of super junction MOSFET using process and design parameters. Trench process is very important to super junction MOSFET process. We analyzed the difference of temperature, thermal resistance, total power consumption according to trench etch angle. As a result we obtained minimum value of temperature difference and thermal resistance at $89.3^{\circ}$ of trench etch angle. The electrical characteristics distribution of super junction MOSFET is not showed tendency according to trench etch angle. We need iterative experiments and simulation for optimal value of electrical characteristics. The super junction power MOSFET that has superior thermal characteristics will use automobile and industry.

A Comparison of Image Reconstruction Techniques for Electrical Resistance Tomography (Electrical Resistance Tomography의 영상복원 기법의 비교)

  • Kim, Ho-Chan;Boo, Chang-Jin;Lee, Yoon-Joon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.19 no.3
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    • pp.119-126
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    • 2005
  • Electrical resistance tomography(ERT) maps resistivity values of the soil subsurface and characterizes buried objects. The characterization includes location, size and resistivity of buried objects. In this paper, Gauss-Newton, truncated least squares(TLS) and simultaneous iterative reconstruction technique(SIRT) methods are presented for the solution of the ERT image reconstruction. Computer simulations show that the spatial resolution of the reconstructed images by the TLS approach is improved as compared to those obtained by the Gauss-Newton and SIRT method.

Negative Induced Polarization Responses over a Layered Earth (층상대지의 음수 유도분극 응답)

  • Kim, Hee Joon
    • Economic and Environmental Geology
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    • v.20 no.3
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    • pp.197-201
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    • 1987
  • Negative induced polarization (IP) responses are examined for a three-layered earth using a digital linear filter method. The negative IP response can occur when the geoelectric section is of type K or Q. The section of type K creates a more pronounced negative effect than that of type Q. For such sections, IP coefficients are determined as a function of the resistivity distribution and the electrode configuration, and only the IP coefficient of the first layer can be negative. As a result, the negative IP response can occur when the first layer is polarizable in the section of type K or Q. and the polarizabilities of the other layers can act to depress the negative response.

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Estimation of Evapotranspiration in a Forest Watershed in Central Korea (중부(中部) 산림(山林) 지역(地域)의 증발산량(蒸發散量) 추정(推定))

  • Kim, Jesu
    • Journal of Korean Society of Forest Science
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    • v.88 no.1
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    • pp.86-92
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    • 1999
  • Evapotranspiration is one of important variables affecting ecosystem processes such as vegetation distribution and growth. It acts as a limiting factor for natural water resource management. The transpiration of vegetation is mainly determined by climatic factors. The lower slope of the study area was densely forested with Pinus densiflora S. et Z. of 8 m height, and the upper slope was covered with poorly grown Pinus densiflora S. et Z. and Quercus trees. The amount of evapotranspiration was estimated to 590.3 mm/yr by annual water budget method. The canopy resistance of Penman-Monteith model was determined as 99 s/m. Seasonal evapotranspiration can be estimated with the calculated evaporation and the canopy resistance. The amount of evapotranspiration peaked in May. That is considered from both the direct evaporation of intercepted rainfall and the transpiration of vegetation during the dry spring season.

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Computation of Wave Resistance in the Water of Finite Depth Using a Panel Method (패널법을 이용한 유한수심에서의 조파저항 계산)

  • S.J. Lee
    • Journal of the Society of Naval Architects of Korea
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    • v.29 no.4
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    • pp.66-74
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    • 1992
  • A panel method in the spirit of Hess & Smith(1962), and also of Dawson(1977) was developed to compute the wave resistance of a submerged, or a surface piercing, body moving in the water of finite depth. As a boundary condition on the free surface what is called the Poisson equation is used, while Yasukawa(1989) chose the Dawson equation for which the double-body flow is regarded as the basic one. In order to satisfy the boundary condition on the bottom surface automatically, the sum of a Rankine source and its image with respect to the bottom surface is chosen as the Green function, and hence the singularity is distributed only on the body and on the free surface thereby decreasing the required number of panels dramatically, compared to that of Yasukawa, without the consequential loss of accuracy. Calculations were done for a submerged sphere and for the Wigley hull, and the results are compared with other existing analytical and numerical data.

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A Study on Spatial Distributions of Courant Number and Numerical Efficiency of LTS Method in Calculation of Ship Resistance Using Structured and Unstructured Meshes (정렬 및 비정렬 격자를 이용한 선박 저항 계산에서 Courant 수의 공간 분포 및 LTS 기법의 효율성에 관한 연구)

  • Lee, Sang Bong;Paik, Kwang-Jun;Park, Dong Woo
    • Journal of the Society of Naval Architects of Korea
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    • v.54 no.2
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    • pp.83-89
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    • 2017
  • Numerical simulations of ship resistance have been performed to compare spatial characteristics of Courant number when using structured and unstructured meshes. When Euler scheme was used for time integration, the structured mesh provided a more efficient calculation because the calculation time interval was larger than that of unstructured mesh. The automatic generation of very small meshes in the unstructured mesh was mainly responsible for the limitation of calculation time interval. When local time stepping Euler scheme was applied, however, the ship resistance of unstructured mesh showed a rapid convergence while a slow convergence of ship resistance in structured mesh was caused by the small time interval in bulbous bow.