• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.240-243
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• 2002

반도체 소자의 고속화， 고접적화에 따라 집적회로의 최소 선폭이 감소할수록 device 의 신호지연, 잡음 및 전력소모 등이 증가하는 문제점이 있다. 이러한 문제점을 개선하기 위해서 저유전율의 층간 절연막이 절대적으로 필요하다. 본 실험에서는 KrF laser 조사를 이용한 표면개질 방법으로 다공성 절연막의 박막특성의 향상을 시도하였다. 다공성 절연막을 층간 절연막으로 응용할 경우 반도체 공정 적용성을 향상시키기 위하여 다공성 절연막의 표면개질이 필요하다. 표면개질 전후의 유전율 변화는 박막을 MIM구조로 측정하였고 화학 구조의 변화는 time-of flight secondary ion mass spectrometry(TOF-SIMS)를 이용하여 관찰하였다. 다공성 실록샌 물질의 pore로 인해서 생긴 누설전류 및 흡습 문제를 개선시키고 유전율을 감소시킬 수 있는 것을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.328-328
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• 2008

As a low K material for high frequency high integration modules, glass/ceramic composites were investigated. Glass composition were selected from $SiO_2-B_2O_3-Al_2O_3-R_2O$-RO system which having very low dielectric constant and cordierite was used as a ceramic filler. These composites were sintered at temperature range from $850^{\circ}$ to $950^{\circ}$ and XRD, SEM microstructure analysis of sintered bodies were performed for understanding sintering behavior. Any crystallization was not occurred and dense sintered bodies were attained. Dielectric and mechanical properties of these sintered glass/cordierite composites were analysed by network analyzer and UTM. Glass/ceramic composite with 50 wt% cordierite showing a dielectric constant (${\varepsilon}_r$) of 5.4, Q${\times}f_0$ (Q) of 1600 at 1 GHz and maximum bending strength of 163 MPa was attained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.280-281
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• 2006

Cordierite 결정상을 LTCC공정 적용온도에서 소결하기 위한 glass 조성을 조사하였다. 상용의 glass중 Pb-B-Si-O계, Na-Zn-B-O계 glass를 선택하였고 LTCC용 기판소재로서의 가능성을 확인하기 위하여 저온 동시소성이 가능한 소결온도인 $850^{\circ}C$와 $1000^{\circ}C$ 사이에서 소재의 소결실험을 진행하였다. 소결조건에 따른 상변화, 유전특성을 확인한 결과 glass상, 결정상, 용융에 의한 glass상으로 상의 변화가 있음을 확인 할 수 있었으며, LTCC 소결 조건에서 Pb-B-Si-O계 glass의 경우 2.9~3.7의 낮은 유전율과 0.0027의 우수한 dielectric loss, 내전압 특성을 가지고 있음을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.37-45
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• 2003

The dielectric and sintering characteristics of composites made by substituting Ca ion to Ba-site and Zr ion to Ti site in $(Ba{1-x}Ca_x)(Ti{0.96-yZr_ySn_{0.04})O_3$ $(0.15{\leq}x{\leq}0.20,\;0.09{\leq}y{\leq}0.14)$ were investigated. As the content of Ca was more than 15 mol%, composite was formed by precipitating the second phase whose main element was $CaTiO_3$ and the fraction of the second phase was increased. The curie temperature of composites was depended on Ca concentration, $-1.7^{\circ}C$ per mol% and the maximum dielectric constant of composite was decreased by the rate of 200/mol%. The substitution of Zr ion decreased the curie temperature by the rate of $10^{\circ}C$ per mol% and the maximum dielectric constant was decreased by 217/mol% due to the increase of diffuse phase transition. The density and insulation breakdown characteristics were improved by suppressing the abnormal grain growth due to the increase of second phase. We developed the composition of Y5U (EIA standard) condenser which had high breakdown voltage and dielectric constant by controlling diffuse phase transition by the addition of Zr ion into composite.

• 전자공학회논문지 IE
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• v.43 no.4
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• pp.8-12
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• 2006

In this paper, reflectance and the dielectric characteristics for $P_2O_5$-ZnO-BaO system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ contents, and the reflectance of $P_2O_5$-ZnO-BaO system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5$-ZnO-BaO system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can explained as the space charge effects. These results are could be applied to the lower dielectrics layer of PDP required high reflective ratio and breakdown strength.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.1002-1008
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• 2001

The absorbing structure composed of multi-layered fiber reinforced composite materials was designed and microwave absorbing properties are investigated. On the basis of transmission line theory, the theoretical equations to predict the reflection loss and the appropriate composite material for each functional layer are suggested. The most significant result of this study is the successful design and fabrication of triple-layered composite laminates which has the superior microwave absorbing porperties (more than 10 dB in 4∼12 GHz range), without using the ferrite filler in the impedance transforming layer. In the two-layered composite laminate (absorber/substrate), however, the use of ferrite filler (about 40 wt %) in the absorbing layer is necessary to obtain the certain level of microwave absorbance. By combining the glass-fiber composite with ferrite filler and carbon-fiber composite substrate, the microwave absorbing properties more than 10 dB in 4∼12 GHz frequencies than be obtained.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.167-272
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.409-409
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• 2013

최근, 집적 소자의 미세화에 따라 늘어난 배선 신호 지연 및 상호 간섭, 그리고 소비 전력의 증가는 초고집적 소자 성능 개선에 한계를 가져온다. 이에 따라 기존의 알루미늄(Al)/실리콘 절연 산화막은 구리(Cu)/저유전율 박막(low-k)으로 대체되고 있고, 이는 소자 성능 개선에 큰 영향을 미친다. 그러나 Cu는 Si과 low-k 내부로 확산이 빠르게 일어나 소자의 비저항을 높이고, 누설 전류를 일으키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 이러한 Cu의 확산을 막기 위하여 Ta, TaN 등과 같은 확산방지막에 대한 연구가 활발히 진행되어 왔으나, 배선 공정의 집적화와 low-k 대체에 따른 공정 및 신뢰성 문제로 인해 새로운 확산방지막의 개발이 필요하게 되었다. 이를 위해, 본 연구에서는 Cu-V 합금을 사용하여 low-k 기판 위에 확산방지막을 자가 형성 시키는 공정에 대한 연구를 진행하였다. 다양한 low-k 기판에서 열처리조건에 따른 Cu-V 합금의 특성을 확인하기 위해 4-point probe를 통한 비저항 평가와 XRD (X-ray diffraction) 분석이 이뤄졌다. 또한, TEM (transmission electron microscope)을 이용하여 $300^{\circ}C$에서 1 시간 동안 열처리를 거쳐 자가형성된 V-based interlayer가 low-k와 Cu의 계면에서 균일하게 형성된 것을 확인하였다. 형성된 V-based interlayer의 barrier 특성을 평가하고자 Cu-V합금/low-k/Si 구조와 Cu/low-k/Si 구조의 leakage current를 비교 분석하였다. Cu/low-k/Si 구조는 비교적 낮은 온도에서 leakage current가 급격히 증가하는 양상을 보였으나, Cu-V 합금/low-k/Si 구조는 $550^{\circ}C$의 thermal stress 에서도 leakage current의 변화가 거의 없었다. 이러한 결과를 바탕으로 열처리를 통해 자가형성된 V-based interlayer의 Cu/low-k 간 확산방지막으로서 가능성을 검증하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1017-1024
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• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.97-102
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• 2004

용액 중에서 나노입자의 전기영동 특성을 이용한 전자종이용 잉크 제조를 위해 $TiO_2$ 나노입자를 저유전율 용매인 cyclohexane에 혼합한 후 용매와 용질의 비중차를 줄이기 위해 분말 상 polyethylen을 첨가하여 high energy milling의 방법으로 입자분쇄와 동시에 입자 표면에 고분자 풍을 코팅하였다. 용액내의 입자 분산성 향상과 용매 착색을 위하여 계면활성제와 oil-blue N을 첨가한 후 전자종이용 잉크를 제조하여 측정한 제타 전위 결과 cyclohexane 내에서 $TiO_2$의 제타전위는 -40mV 정도였으나 polyethylene으로 코팅한 후 계면활성제를 첨가하였을 경우 최대 -110mV 이상의 높은 값을 나타내었다. 실제 디스플레이 특성을 평가하기 위해 포토리소그래피를 이용하여 3인치 크기의 ITO glass 위에 $10{\mu}m$의 크기를 갖는 십자형의 격벽을 $40{\mu}m$의 높이로 균일하게 형성한 후 합성된 전자잉크로 주입하여 상부전극과 하부전극사이에 UV 경화제를 도포하여 UV 접합을 실시하였다. 격벽 내에서 입자의 mobility를 측정하여 환산된 전자잉크의 응답속도는 0.1cm/sec로 측정되었으나, 전기영동시 입자들의 움직임에 따른 반사광의 파형을 측정한 경우 0.07cm/sec의 응답속도를 나타내었다.