• Title/Summary/Keyword: 저온활성화

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Improvement of Nitrification Efficiency by Activated Nitrifying Bacteria Injection at Low Temperature (활성화된 질산화균 주입에 의한 저온 질산화효율 향상)

  • Lim, Dongil;Kim, Younghee
    • Journal of the Korean Society of Urban Environment
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    • v.18 no.4
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    • pp.473-483
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    • 2018
  • In this study, we have developed a lab scale bioreactor to identify the characteristics of nitrification reaction according to operation condition (temperature, inhibitor (as Cl), activated nitrifying bacteria (ANB). etc) to improve nitrification efficiency at low temperature. Recovery rate of nitrification took about 4 days to reach the normal level by injected ANB after inhibition shock of CI injection at $20^{\circ}C$, when measured the concentration of $NO_2{^-}-N+NO_3{^-}-N$ in the effluent. In the case of $10^{\circ}C$, recovery of nitrification rate took about 4 days to reach the level of half to the normal level and 7 days for complete recovery which took 3 days more than those at $20^{\circ}C$. At $10^{\circ}C$ considering the winter season, the specific nitrification rate(SNR) of the from 1 day to 6 days after injected ANB according to its operation condition increased from 0.029 to 0.767 mgN/gSS/hr. The simulated SNR for the 8th day after the injected ANB at $10^{\circ}C$ was 0.840, 3.625 mgN/gSS/hr, respectively as linear function and exponential function, expecting to exceed level of 2.592 mgN/gSS/hr at normal condition. It was confirmed that injection of ANB during low temperature operation has many effects for improving nitrification efficiency through this study. In future studies, if further studies are carried out the determination of ANB injection and the design of efficient ANB reactor considering the changes of operating characteristics by site, it will contribute to the improvement of nitrification efficiency in winter season.

The study on the methane activation by a plasma (플라즈마 반응에 의한 메탄 활성화에 관한 연구)

  • Cho Won Ihl;Baek Young Soon;Kim Byung Il;Kim Young Chai
    • Journal of the Korean Institute of Gas
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    • v.2 no.3
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    • pp.60-69
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    • 1998
  • Methane, the major constituent of natural gas, had been converted to higher hydrocarbons by microwave and radio-frequency plasma in vacuum condition. Methane had been activated to plasma by suppling high energy then converted to ethane, ethylene, acetylene. The direct conversion process of methane had produced few by-products and demanded low-energy. The plasma sources were microwave and radio-frequency. Two types of reactor had been used to activate methane. One is common single tubular-type reactor and the other is series coil-type reactor which used for the first time in this study. To produce more C2 products, methane had been converted by a plasma and catalyst. The results of this study could be used to study mechanism of plasma reaction of methane, design the plant-scale reactor.

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XPS study of sapphire substrate surface nitridated by plasma activated nitrogen source (Plasma로 활성화된 질소 원자를 사용한 사파이어 기판 표면의 저온 질화처리의 XPS 연구)

  • 이지면;백종식;김경국;김동준;김효근;박성주
    • Journal of the Korean Vacuum Society
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    • v.7 no.4
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    • pp.320-327
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    • 1998
  • The chemical aspects of nitridated surface of sapphire(0001) have been studied by X-ray photoelectron spectroscopy. Nitridated layer was formed by remote plasma enhanced-ultrahigh vacuum deposition at a low temperature range. It was confirmed that this nitridated surface was mainly consists of AIN layer. The relative amounts of nitrogen reacted with AL on the sapphire surface and their surface morphology were investigated with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) as a function of radio-frequency power, reaction temperature, and reaction time. The amounts of atomic nitrogen activated by plasma which was subsequently incorporated into sapphire were increased with RF power. But the amounts of nitrogen reacted with AI in sapphire was initially increased and then remained constant. However, the relative amounts of AIN were nearly constant with irrespective of nitridation temperature and time. Furthermore, a depth porfile of nitridated layer with XPS showed that the nitridated surface consisted of three layers with different stoichiometry.

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Biochemical Changes in Brassica Seedlings Due to Cold Acclimation Treatment (Brassica속 작물 유묘에서 장기 저온 순화처리에 따른 생화학적 변화)

  • Park, Woo-Churl;Oh, Yun-Jin;Nam, Min-Hee
    • Applied Biological Chemistry
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    • v.38 no.3
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    • pp.212-217
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    • 1995
  • This study was aimed for determining the biochemical mechanism of cold tolerance in crops and for searching the biochemical genetic marker related with cold tolerance by the analysis of isozyme pattern. We investigated various biochemical changes induced by the long-term cold acclimation in cold sensitive rape (B. napus) and in cold tolerant 'Sandongchae'(B. campestris) seedlings. The cold shock after long-term cold acclimation to B. napus and B. campestris greatly increased the activities of peroxidase 157% and 50% in root fraction and, 201% and 205% in hypocotyl, respectively. Simultaneously, the activity of superoxide dismutase was largely increased in hypocotyl fraction, too. Protein contents of hypocotyl fractions in B. napus and B. campestris were also increased by 11.4% and 57.8%, respectively. The band of pl 6.4 among peroxidase isozymes newly biosynthesized during long-term cold acclimation was emerged in the hypocotyl fraction of cold tolerant B. campestris as well as in the root of both species. From above and previous results, we presented a model of interconversions of molecular oxygen species due to the cold injury and biochemically inferred the mechanism of cold tolerance in crops.

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Crystal Growth, Electrical and Optical Properties of Cubic $ZrO_2$(10 mol% $Y_2O_3$) Single Crystals Doped With Rare Earth Metal Oxides(RE=Ce, Pr, Nd, Eu, Er) (희토류 금속 산화물(RE=Ce, Pr, Nd, Eu, Er)을 첨가한 큐빅 $ZrO_2$(10 mol% $Y_2O_3$)단결정의 결정성장, 전기적 성질 및 광학적 성질)

  • 정대식;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.1
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    • pp.5-16
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    • 1991
  • It was grown Cubic $ZrO_2(10 mol% Y_2O_3)$ single crystals doped with 1 wt% rare earth metal oxides (RE=Ce, Pr, Nd, Eu, Er) by Skull method. It was investigated electrical properties on (111) plane of grown single crystals by Impedance Spectroscopy. It was potted relation between temperature and electrical conductivities and observed the transition at $약300-400^{\circ}$ It was obtained activation energy on the migration of oxygen vacancy between low temperature (before the transition) and high temperature (after the transition till ${\11}500^{\circ}$) and its difference can be seen the activation energy of the formation of oxygen vacancies by break up defect complexes. It was obtained the activation energy according as add yttria and rare earth metal oxides and discussed ionic conduction mechanism. Grown single crystals showed Ce: orange - red, Pr: golden - yellow, Nd: lilac, Eu: light pink, Er: pink due to dopant effect from the light absorption data in the visible range.

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Si 기판 위에 성장한 CdTe/ZnTe 양자점의 크기에 따른 열적 활성화 에너지와 운반자 동역학

  • Lee, Ju-Hyeong;Choe, Jin-Cheol;Lee, Hong-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.340-341
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    • 2013
  • 양자점(Quantum dots; QDs)은 단전자 트랜지스터, 레이저, 발광다이오드, 적외선 검출기와 같은 고효율 광전소자 응용을 위해 활발한 연구가 진행되고 있다. II-VI 족 화합물 반도체는 III-V 족 화합물 반도체와 비교했을 때 더 큰 엑시톤 결합에너지(exciton binding energy)를 가지는 우수한 특성을 보이고 있으며 이러한 성질을 가지는 II-VI 족 화합물 반도체 중에서도 넓은 에너지 갭을 가지는 CdTe 양자점은 녹색 영역대의 광전자 소자로서 활용되고 있다. 기존의 CdTe/ZnTe 양자점을 성장하기 위해 ZnTe와 격자부정합이 적은 GaAs 기판을 이용한 연구가 주를 이룬 반면 Si기판을 이용한 연구는 미흡하다. 하지만 Si 기판은 GaAs 기판에 비해 값이 싸고, 여러 분야에 응용이 가능하며 대량생산이 가능하다는 이점을 가지고 있어 초고속, 초고효율 반도체 광전소자의 제작을 가능케 할 것으로 기대된다. 또한 양자점의 고효율 광전소자에 응용을 위해서는 Si 기판 위에 양자점의 크기를 효율적으로 조절하는 연구 뿐 아니라 양자점의 크기에 따른 운반자 동역학에 대한 연구도 중요하다. 본 연구에선 분자선 에피 성장법(Molecular Beam Epitaxy; MBE)과 원자층 교대 성장법(Atomic Layer Epitaxy; ALE)을 이용하여 Si 기판 위에 성장한 CdTe/ZnTe 양자점의 크기에 따른 광학적 특성을 연구하였다. 저온 광 루미네센스(PhotoLuminescence; PL) 측정 결과 양자점의 크기가 증가함에 따라 더 낮은 에너지영역으로 피크가 이동하는 것을 확인하였다. 그리고 온도 의존 광루미네센스 측정 결과 양자점의 크기가 증가함에 따라 열적 활성화 에너지가 증가하는 것을 관찰하였는데, 이는 양자점의 운반자 구속효과가 증가하였기 때문이다. 또한 시분해 광루미네센스 측정 결과 CdTe/ZnTe 양자점의 크기가 증가함에 따라 소멸 시간이 긴 값을 갖는 것을 관찰하였는데, 이는 양자점의 크기가 증가함에 따라 엑시톤 진동 세기가 감소하였기 때문이다. 이와 같은 결과 Si 기판 위에 성장한 CdTe/ZnTe 양자점의 크기에 따른 열적 활성화 에너지와 운반자 동역학에 대해 이해 할 수 있었다.

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Evaluation of Thermal Aging on PVC Using Thermo Gravimetry Analysis and Accelerated Thermal Aging Test (TGA와 가속열화를 이용한 전선 피복용 PVC의 열적 열화평가)

  • 박형주;김기환;김홍
    • Fire Science and Engineering
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    • v.18 no.3
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    • pp.45-50
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    • 2004
  • Thermal degradation of PVC which used for insulator of 600V vinyl insulated wire has been studied by thermo gravimetry analysis and accelerated thermal aging test. The activation energy using thermo gravimetry analysis was determined by the kinetic methods, such as Kissinger and Flynn-Wall-Ozawa. The activation energy was determined to from 89.29 kJ/mol to 111.39 kJ/mol in 600V PVC insulated wire and from 97.80 kJ/mol to 119.25 kJ/mol in 600v heat-resistant PVC insulated wire. And also, the activation energy through a long-term thermal aging test was calculated by using Arrhenius equation In the low temperature of 8$0^{\circ}C$, 9$0^{\circ}C$, 10$0^{\circ}C$. The results showed that 600V PVC insulated wire was 92.16 kJ/mol, and 600v heat-resistant PVC insulated wire was 97.52 kJ/mol. Consequently, the activation energy of 600V heat-resistant PVC insulated wire is larger than 600V PVC insulated wire. Therefore, it can be predicted that 600V heat-resistant PVC insulated wire has a long-term stability relatively.

Cold shock sensitive growth of Bacillus subtilis mutants deleted for genes involved in fatty acid synthesis (지방산 생합성 관련 유전자 결손 Bacillus subtilis 균주들의 저온충격 민감성 생장)

  • Kim, Do Hyung;Lee, Sang Soo
    • Korean Journal of Microbiology
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    • v.54 no.1
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    • pp.9-17
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    • 2018
  • To investigate the role of bkdR, sigL, yplP, and des genes which were known to be involved in fatty acid synthesis and sensitive at low temperature, deletion mutants of Bacillus subtilis CU1065 and JH642 were constructed. To determine the low temperature sensitivity of these genes, we compared the growth curves of cells at $37^{\circ}C$ and $15^{\circ}C$. At $37^{\circ}C$, wild type and deletion mutants showed almost similar growth but only bkdR deletion strain at $15^{\circ}C$ showed very slow growing compared with wild type. At $15^{\circ}C$ sigL and yplP deletions were somewhat slower or similar to those of wild type strain. Double and triple mutants for bkdR, sigL, yplP deletions were constructed and grown at $20^{\circ}C$ in LB agar to investigate cold sensitive growth. Double or triple deletions including bkdR deletion showed cold sensitive growing. In order to identify more clearly cold sensitive growth, the experiments were carried out under cold shock conditions in which the temperature was lowered from $37^{\circ}C$ to $15^{\circ}C$ at the point of 0.4 optical densities at 600 nm. In these cold shock experiments, only bkdR deletion showed significantly lower growing and additional des deletion increases cold sensitivity. The bkdR activates the bkd operon, which catabolized isoleucine, valine and leucine, amino acids and produce precursors for the synthesis of branched fatty acids. At cold shock growing of bkdR deletion strain, isoleucine recovered cold sensitivity of bkdR deletion but valine did not restore cold sensitivity. Isoleucine is used as a precursor for the synthesis of anteiso-branched fatty acids. On the other hand, valine is used as a precursor for the synthesis of iso-branched fatty acids. This indicates that anteiso-branched fatty acid plays an important role at the cold shock condition.

Investigation of characteristic on Solution-Processed Al-Zn-Sn-O Pseudo Metal-Oxide-Semiconductor Field-Effect-Transistor using microwave annealing

  • Kim, Seung-Tae;Mun, Seong-Wan;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.206.2-206.2
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    • 2015
  • 최근 비정질 산화물 반도체 thin film transistor(TFT)는 차세대 투명 디스플레이로 많은 관심을 받고 있으며 활발한 연구가 진행되고 있다. 산화물 반도체 TFT는 기존의 비정질 실리콘 반도체에 비하여 큰 on/off 전류비, 높은 이동도 그리고 낮은 구동전압으로 인하여 차세대 투명 디스플레이 산업에 적용 가능하다는 장점이 있다. 한편 기존의 sputter나 evaporator를 이용한 증착 방식은 우수한 막의 특성에도 불구하고 많은 시간과 제작비용이 든다는 단점을 가지고 있다. 따라서 본 연구에서는 별도의 고진공 시스템이 필요하지 않을 뿐만 아니라 대면적화에도 유리한 용액공정 방식을 이용하여 박막 트렌지스터를 제작하였으며 thermal 열처리와 microwave 열처리 방식에 따른 전기적 특성을 비교 및 분석하고 각 열처리 방식의 열처리 온도 및 조건을 최적화 하였다. 제작된 박막 트렌지스터는 p-type bulk silicon 위에 산화막이 100 nm 형성된 기판에 spin coater을 이용하여 Al-Zn-Sn-O 박막을 형성하였다. 연속해서 photolithography 공정과 BOE (30:1) 습식 식각 과정을 이용해 활성화 영역을 형성하여 소자를 제작하였다. 제작 된 소자는 Pseudo-MOS FET구조이며, 프로브 탐침을 증착 된 채널층 표면에 직접 접촉시켜 소스와 드레인 역할을 대체하여 동작시킬 수 있어 전기적 특성평가가 용이하다는 장점을 가지고 있다. 그 결과, microwave를 통해 열처리한 소자는 100oC 이하의 낮은 열처리 온도에도 불구하고 furnace를 이용하여 열처리한 소자와 비교하여 subthreshold swing(SS), Ion/off ratio, field-effectmobility 등이 개선되는 것을 확인하였다. 따라서, microwave 열처리 공정은 향후 저온 공정을 요구하는 MOSFET 제작 시의 훌륭한 대안으로 사용 될 것으로 기대된다.

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Numerical Study on the Effect of Volume Change of Light-Off Catalyst on Light-Off Performance (저온활성촉매변환기의 체적변화가 활성화 성능에 미치는 영향에 관한 수치적 연구)

  • 정수진;김우승
    • Transactions of the Korean Society of Automotive Engineers
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    • v.8 no.6
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    • pp.87-100
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    • 2000
  • HC and CO emissions during the cold start contribute the majority of the total emissions in the legislated driving cycles. Therefore, in order to minimize the cold-start emissions, the fast light-off techniques have been developed and presented in the literature. One of the most encouraging strategies for reducing start-up emissions is to place the light-off catalyst, in addition to the main under-body catalyst, near the engine exhaust manifold. This study numerically consider three-dimensional, unsteady compressible reacting flow in the light-off and under body catalyst to examine the impact of a light-off catalyst on thermal response of the under body catalyst and tail pipe emission. The effect of flow distribution on the temperature distribution and emission performance have also been examined. The present results show that flow distribution has a great influence on the temperature distribution in the monolith at the early stage of warm-up process and the ultimate conversion efficiency of light-off catalyst is severly deteriorated when the space velocity is above $100,000hr^{-1}$.

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