• Proceedings of the Computational Structural Engineering Institute Conference
• /
• 2010.04a
• /
• pp.504-507
• /
• 2010

본 논문에서는 저온용 오스테나이트계 스테인리스강(ASS)의 온도 및 변형률 속도의 영향을 고려한 통합 구성 방정식 및 손상 모델을 제안하였다. 저온 영역에서, 304L ASS의 온도 및 변형률 속도별 인장 실험을 시행하였다. 그 결과, 변형 유기 마르텐사이트 상변태에 의해 상변태 유기 소성(TRIP)이 저온에서 현저히 나타났으며 온도 및 변형률 속도의 영향이 지대하였다. 실험 결과를 바탕으로 ASS의 저온 거동 및 특성을 규명하여 수치 모델에 반영하였다. 저온에서 일어나는 2차 경화 현상을 표현하기 위해, Bodner/Partom 점소성 구성 방정식을 수정하고 Tomita/Iwamoto 변형 유기 상변태 모델을 구성 방정식에 적용시켰다. 저온 연성 파단 현상을 표현하기 위해, Bodner/Chan 손상모델을 수정하여 접목시켰다. 제안된 모델을 유한요소 프로그램에 탑재시키고, 온도 및 변형률 속도 의존 재료 정수를 결정하였다. 저온 영역에서, 온도 및 변형률 속도별 재료 거동을 시뮬레이션하고 이를 실험 결과와 비교 및 검증하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.103-106
• /
• 1999

Organic electroluminescent devices (OELDs) have received a great deal of attention due to their potential application as full-color displays. Europium complexes are known as excellent red light-emitting materials for OELDs since they show intense photoluminescence at around 612 nm with a narrow spectral bandwidth. In this study, a novel curopium complex, Eu(TTA)$_3$(TPPO) was synthcsizcd and its photoluminescent and electroluminescent characteristics were investigated with a device structure of ITO/TPD/Eu(TTA)3(TPPO)/A1q$_{3}$ Al, where sharp emission at the wavelength of 615 nm has been observed. Details on the electrical properties of these structures will be also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.586-589
• /
• 1999

Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer far electronic and optoelectronic devices. In this study, $\alpha$ -sexithiophene($\alpha$-6T) thin films and various electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. Those films were photolithographically patterned fur measurements. Electrical characterization of the thin film transistor with various channel length were measured, and field effect mobility is calculated by formula.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.327-330
• /
• 1999

In this paper, the electrical characteristics of λ vibration-mode piezoelectric transformer for applying to CCFL driving inverter was investigated. Piezoelectric transformer was made of PZT - PMN -0.5wt% N $b_2$ $O_{5}$ composition. As a results of the electrical characteristics of piezoelectric transformer, when applied voltage was 35[ $V_{rms}$] in 100[k$\Omega$] load resistance, output voltage was about 510[ $V_{rms}$] and output power was more than 2[W]. As output power increased, step-up ratio and temperature was very stable until output power was 2.5(W). Also, Efficiency was maximum in 70[k$\Omega$] load resistance, and about 89[%]. Also, when piezoelectric transformer was continuously driven for 10[hrs], output voltage and temperature change ratio was fess than 10[%], and very stable. Conclusively, piezoelectric transformer fabricated in this paper can be applied to piezoelectric inverter for CCFL driving.g.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.557-560
• /
• 2000

Combination of SDB(Si-wafer Direct Bonding) and electrochemical etch-stop in TMAH anisotropic etchant can be used to create a variety of MEMS(Micro Electro Mechanical System). Especially, fabrication of SDB SOI structures using electrochemical etch-stop is accurate method to fabrication of 3D(three-dimensional) microstructures. This paper describes on the fabrication of SDB SOI structures with sealed cavity for MEMS applications and thickness control of active layer on the SDB SOI structure by electrochemical etch-stop. The flatness of fabricated SDB SOI structure is very uniform and can be improved by addition of TMAH to IPA and pyrazine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.407-410
• /
• 2000

(M $n_{l-x}$M $g_{l-x}$)F $e_{2+x}$ $O_4$(x=0.0, 0.025, 0.1, 0.2) for NTC(negative temperature coefficient) thermistor was prepared by calcining at 80$0^{\circ}C$ and sintering at from 1100 to 130$0^{\circ}C$ with 5$0^{\circ}C$ intervals while x was varied from 0.0 to 0.025, 0.1 and 0.2. The best linear property was obtained in the based specimen sintered at 120$0^{\circ}C$ with x=0.1 composition. Thermistor parameter, $B_{25~85^{\circ}C}$, was in the range of 5000~ 7300 [K]. Temperature coefficient of resistance, $\alpha$$_{25^{\circ}C}$, was -5.2 %/$^{\circ}C$. The results showed the possibility that Mn-Ni-Co based thermistor could be substituted by the composition used in this study was confirmed.med.d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.2
• /
• pp.125-130
• /
• 2003

TiO$_2$ nanoparticles were prepared by photochemical synthesis in the dry toluene. The shape and size of the amorphous TiO$_2$ nanoparticles were investigated by transmission electron microscope. The particle size was varied by the contents of the titanium (IV) isopropoxide in dry toluene. Especially networked TiO$_2$ particles were formed from 40% titanium (IV) isopropoxide solution. The optical absorption spectra, photoluminescence, and PL excitation spectra of TiO$_2$ in dry toluene were obtained. The were shifted to the short wavelength as the contents of TiO$_2$ were increased. PL excitation had the peak at the wavelength regions is which the absorption increased steeply.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.312-315
• /
• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.517-520
• /
• 2001

The optical properties of TiO$_2$ thin films dispersed in epoxy film, which were prepared with bits-(4,4'-P-toluenesulfonylacidic isoproplyidene) cycolhexadiol(BTSPC) and UVI 6990 in dry sol-gel process, were investigated. In the case of irradiating UV light on TiO$_2$ thin films, how many nanoparticles of TiO$_2$ are dispersed in epoxy film was investigated by AFM. The absorption peak of the films was showed at 360nm. Squarylium dye was dispersed in TiO$_2$-epoxy film. Photodegration concerned with amount of dye and time of UV light irradiation was investigated. UV light irradiation on the film occurred dramatical photodegration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.378-381
• /
• 2001

The electron drift mobility of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethy-3,5-di-t-butylstilbenequinone(MBSQ), 3,5,3,5-tetra-t-butyl stilbenequinone(TMSQ) and 3,5,3,5-tetra-methyl stilbenequinone(TMSQ) was measured by the time-of-flight technique. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel, Arrhenius formulations and non-Arrhenius type of temperature dependence. It was assumed that the hopping sites were Gaussian distribution. Mobility and activation energy of MBSQ were increased with increasing dopant. However, mobilities and activation energy of TBSQ and TMSQ were increased and decreased, respectively.