• Design Convergence Study
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• v.17 no.4
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• pp.17-29
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• 2018

In the semi-autonomous vehicle, before reaching a fully autonomous driving stage, it is imperative for the system to issue a take-over request(TOR) that asks a driver to operate manually in a specific situation. The purpose of this study is to compare whether head-up display(HUD) is a better human-vehicle interaction than head-down display(HUD) in the event of TOR. Upon recognition of TOR in the experiment with a driving simulator, participants were prompted to switch over to manual driving after performing a secondart task, that is, playing a game, while in auto-driving mode. The results show that HUD is superior to HDD in 'ease of use' and 'satisfaction' although there is no significant difference in reaction time and subjective workload. Therefore, designing secondary tasks through HUD during autonomous driving situation improves the user experience of the TOR function. The implication of this study lies in the establishing an empirical case for setting up UX design guidelines for autonomous driving context.

• Transactions of the Korean Society of Automotive Engineers
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• v.8 no.4
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• pp.121-129
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• 2000

this paper develops a computational model for the turning maneuver analysis of a cabover type heavy truck. The model having 42 degree-of-freedom is developed using ADAMS. Leaf springs used in the front and rear suspension systems are modeled by dividing it three links and joining them with joints. Force and displacement relationship showing nonlinear hysteric characteristics of the leaf spring is measured and modeled with an exponential function. A velocity and force relationship of a shock absorber is measured and modeled with a spline function. And a stabilizer bar is modeled using ADAMS beam element to consider a twisting and bending effect. To verify the developed model an actual vehicle test is performed in the double lane change course with 50kph and 60kph vehicle velocity. In the actual vehicle test lateral acceleration roll angle and yaw rate are measured, The tendency and peak-to-peak values of the actual vehicle test and simultion results are compared each other.

• Proceedings of the Korea Water Resources Association Conference
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• 2023.05a
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• pp.229-229
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• 2023

강화학습은 에이전트(agent)가 주어진 환경(environment)과의 상호작용을 통해서 상태(state)를 변화시켜가며 최대의 보상(reward)을 얻을 수 있도록 최적의 행동(action)을 학습하는 기계학습법을 의미한다. 최근 알파고와 같은 게임뿐만 아니라 자율주행 자동차, 로봇 제어 등 다양한 분야에서 널리 사용되고 있다. 상수도관망 분야의 경우에도 펌프 운영, 밸브 운영, 센서 최적 위치 선정 등 여러 문제에 적용되었으나, 설계에 강화학습을 적용한 연구는 없었다. 설계의 경우, 관망의 크기가 커짐에 따라 알고리즘의 탐색 공간의 크기가 증가하여 기존의 최적화 알고리즘을 이용하는 것에는 한계가 존재한다. 따라서 본 연구는 강화학습을 이용하여 상수도관망의 구성요소와 환경요인 간의 복잡한 상호작용을 고려하는 설계 방법론을 제안한다. 모델의 에이전트를 딥 강화학습(Deep Reinforcement Learning)으로 구성하여, 상태 및 행동 공간이 커 발생하는 고차원성 문제를 해결하였다. 또한, 해당 모델의 상태 및 보상으로 절점에서의 압력 및 수요량과 설계비용을 고려하여 적절한 수량과 수압의 용수 공급이 가능한 경제적인 관망을 설계하도록 하였다. 모델의 행동은 실제로 공학자가 설계하듯이 절점마다 하나씩 차례대로 다른 절점과의 연결 여부를 결정하는 것으로, 이를 통해 관망의 레이아웃(layout)과 관경을 결정한다. 본 연구에서 제안한 방법론을 규모가 큰 그리드 네트워크에 적용하여 모델을 검증하였으며, 고려해야 할 변수의 개수가 많음에도 불구하고 목적에 부합하는 관망을 설계할 수 있었다. 모델 학습과정 동안 에피소드의 평균 길이와 보상의 크기 등의 변화를 비교하여, 제안한 모델의 학습 능력을 평가 및 보완하였다. 향후 강화학습 모델을 통해 신뢰성(reliability) 또는 탄력성(resilience)과 같은 시스템의 성능까지 고려한 설계가 가능할 것으로 기대한다.

• Clean Technology
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• v.28 no.3
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• pp.227-231
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• 2022

The demand for high-voltage power devices is rising in various industries, but especially in the transportation industry due to autonomous driving and electric vehicles. IGBT module parts of 3.3 kV or more are used in the power propulsion control device of electric vehicles, and the procurement of these parts for new construction and maintenance is increasing every year. In addition, research to optimize high-voltage IGBT parts is urgently required to overcome their very high technology entry barrier. For the development of high-voltage IGBT devices over 3.3 kV, the resistivity range setting of the wafer and the optimal conditions for major unit processes are important variables. Among the manufacturing processes to secure the optimal junction depth, the optimization of the diffusion process, which is one step of the unit process, was examined. In the diffusion process, the type of gas injected, the injection time, and the injection temperature are the main variables. In this study, the range of wafer resistance (Ω cm) was set for the development of high voltage IGBT devices through unit process simulation. Additionally, the well drive in (WDR) condition optimization of the diffusion process according to temperature was studied. The junction depth was 7.4 to7.5 ㎛ for a ring pattern width of 23.5 to25.87 ㎛, which can be optimized for supporting 3.3 kV high voltage power devices.