• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.251-255
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• 1999

NiFe(60 $\AA$)/Co(0$\AA$$\leq$x$\AA$$\leq$15$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were prepared on 4$^{\circ}$ tilt-cut Si(111) substrates with a 50 $\AA$ thick Cu underlayer without applying any external magnetic field during the deposition, and the effects of inserted ultrathin Co layer on magnetic anisotropy and GMR properties of the NiFe(60 $\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valves were investigated. As the ultrathin Co layer was inserted into the NiFe/Cu interface of the spin valves, GMR ratio was increased from about 1.5% to 3.5%, and the easy axis of NiFe(60 $\AA$) layer was rotated by 90$^{\circ}$. Accordingly, it was aligned along the same direction with the easy axis of Co(30 $\AA$)layer. Therefore, squared R-H curves was obtained in the spin valves, which is favorable properties for the digital GMR devices such as MRAM. In order to investigate the change of magnetic anisotropy of NiFe layer of the spin valves in more details,XRD measurement was performed using NiFe(500 $\AA$) and NiFe(500 $\AA$)/Co(10 $\AA$) thin films on the same templates. Strong (220) NiFe peak was observed in both films regardless of the inserted Co layer, so it was thought that the variation of magnetic anisotropy of NiFe layer is from the interface effect, the change of interface from NiFe/Cu to NiFe/Co, rather than the volume effect such as the change of magnetocrystalline effect.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.146-148
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• 2012

미크론 자성비드 검출용 바이오센서에 활용하는 GMR-SV 박막을 이온빔 스퍼터링 증착법으로 glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm)의 구조를 갖도록 증착하였다. 비자성체 Cu의 두께가 3.0 nm에서 2.2 nm까지 얇아질수록 교환결합력은 증가하였으며 자기저항비는 다소 낮았다. 비자성체의 두께가 얇으면 반강자성체의 층간 교환작용이 강자성체의 고정층 뿐만 아니라 자유층의 스핀배열에도 영향을 주고 있음을 확인할 수 있었다. 또한 리소그래피 공정 과정을 거쳐 GMR-SV 소자를 제작하여 미트론 자기비드를 검출하였다. 여기서 자기비드를 떨어뜨리기 전과 후의 자기저항비, 교환결합력, 보자력은 각각 0.9%, 3 Oe, 2 Oe의 값을 나타내었다. 이것으로 미크론단위의 바이오센서로서 활용할 수 있는 가능성을 보여주었다.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.50-51
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• 2002

최근 실온에서 약 40％ 이상의 높은 자기저항(magnetoresistance, MR)을 나타내는 자기 터널 접합(magnetic tunnel junction, MTJ)이 보고되면서 비휘발성 자기메모리로의 응용을 눈앞에 두고 있다.[1]. 이에 본 실험에서는 Substrate / Ta (base electrode) / NiFe / PtMn (AF pinning layer) / CoFe (pinned) / Ru / CoFe (fixed) / Al-O/ CoFe (free) / NiFe (free) / Ta & Ru (Capping Layer)과 같은 MTJ 증착 구조를 사용하여, MTJ의 보다 향상된 특성을 확보하기 위한 노력으로서 Al-O 두께, 어닐링 조건(Field Intensity ＆ Sequence)변화 등을 시도하였다. (중략)

• Korean Journal of Weed Science
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• v.31 no.2
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• pp.192-198
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• 2011

This study was conducted to investigate the herbicidal activity against Scirpus planiculmis (SCPPL) which has been reported as resistant biotype on sulfonylurea (SU) herbicides at the west coast reclaimed area first and proliferated continuously at Hwasung and Pyeongtaek in Gyeonggi province, and some Chungnam province. In order to investigate resistance breakability against SCPPL, new rice herbicides containing tefuryltrione [p-hydrophenyl pyruvate dioxygenase (HPPD) inhibitor], pyrimisulfan and triafamone[actolactate synthethase (ALS) inhibitor] were tested. In both lab and field experiments, tefuryltrione GR, 4-HPPD inhibitor showed growth retardation with a bleaching on the young leaves of SCPPL at early time after treatment. However, it restored and regerminated with insufficient control effect. On the other hand, pyrimisulfan+mefenacet SC, triafamone+tefuryltrione GR, and ALS inhibitor showed excellent control effect on SU-resistant SCPPL with growth retardation and necrosis. In particular, pyrimisulfan+mefenacet SC showed excellent controlling effect on SU-resistant SCPPL in regional field experiments.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.57-62
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• 2011

We have studied the electrical and magnetic transport properties of tunneling device with FePt magnetic quantum dots. The FePt nanoparticles with a diameter of 8~15 nm were embedded in a $SiO_2$ layer through thermal annealing process at temperature of $800^{\circ}C$ in $N_2$ gas ambient. The electrical properties of the tunneling device were characterized by current-voltage (I-V) measurements under the perpendicular magnetic fields at various temperatures. The nonlinear I-V curves appeared at 20 K, and then it was explained as a conductance blockade by the electron hopping model and tunneling effect through the quantum dots. It was measured also that the negative magneto-resistance ratio increased about 26.2% as increasing external magnetic field up to 9,000 G without regard for an applied electric voltage.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.311-314
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• 2005

We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.24-29
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• 2002

It was observed that exchange bias field was increased with smooth surface and better ${\gamma}$-FeMn formation. Sputtering conditions were varied for the control of the surface roughness and ${\gamma}$-FeMn formation. From the results of Cu deposition as underlayer, it was found that ${\gamma}$-FeMn formation was closely related with the thickness of underlayer. After heat treatment, exchange bias field was increased over three times. This improvement was likely that the crystallites of ${\gamma}$-FeMn were well formed. In Co/Cu/Co/FeMn spin valve structure, magnetoresistance was increased over 1.4 times through the heat treatment. This was due to the disappearance of Co/Cu intermixed dead layer and removal of defect, and this was examined by AES analysis.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.201-205
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• 2002

The tunneling magnetoresistance (TMR) of a ramp-edge type junction has been studied. The samples with a structure of NiO(60)/Co(10)/NiO(60)/Si$_3$N$_4$(2-6)/NiFe(10) (nm) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics was obtained from a ramp-type tunneling junctions having the dominant difference between zero and ＋90 Oe perpendicular to the junction edge line. The voltage dependence of TMR was stable up to a bias volt of $\pm$10 V with a TMR ratio of about -10%, which may be very peculiar magnetic tunneling properties with asymmetric tunneling process between wedge Co pinned layer and NiFe free layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.73-82
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• 1998

The exchange anisotropy is the unidirectional magnetic anisotropy which comes from exchange interaction between antiferromagnetic layer and ferromagnetic layer. The application of this phenomenon to MR read head and spin-valve type GMR (Giant Magnetoresistance) head has been studied extensively. In our study, we intended to apply exchange anisotropy of NiO/NiFe bilayer to spin-valve type GMR element. Above all, we studied the exchange anisotropy of NiO/NiFe bilayer, and focused especially on the effect of NiO deposition condition. And we found that Ar pressure during NiO deposition was crucial factor for the exchange anisotropy of NiO/NiFe bilayer. The lower the Ar pressure is, the better the characteristics of exhange anisotropy is. Then, we applied this optimum condition of NiO/NiFe bilayer to spin-valve type GMR element. Finally we got spin-valve type GMR element which had 3.6 % MR ratio, 16 Oe switching field, and 0.25 %/Oe sensitivity.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.118-122
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• 2000

MR characteristics of $Al_2$ $O_3$ based magnetic tunneling juction with various $Al_2$ $O_3$ thicknesses were investigated. Spin-dependent tunneling junctions, in which the tunneling barrier $Al_2$ $O_3$ is formed by depositing a 1-3 nm thick Al layer, followed by thermal oxidation at room temperature in an $O_2$atmosphere, were fabricated on 4$^{\circ}$tilt(111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$_{80}$Fe$_{20}$ and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2 nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.s.