• Journal of the Korean Vacuum Society
• /
• v.12 no.1
• /
• pp.55-63
• /
• 2003

A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of $CO_2$ and $N_2O$ gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of $5\times10^{-14}\textrm{cm}^2$ at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.

• Polymer(Korea)
• /
• v.33 no.5
• /
• pp.496-500
• /
• 2009

Optically compensated bend liquid crystal display (OCB-LCD) has many application fields owing to its fast response time and wide viewing angle. However, in order to operate the OCB-LCD in bend state, this device needs quick transitions from the initial splay state to bend state. Unlike conventional approach using transient high voltage for the transition, the OCB-LCD with high surface tilt angle, which was achieved by polymerization of UV curable reactive mesogen monomer under certain voltage, was manufactured and the cell showed bend state initially. Electro-optic and electrical characteristics of the cell were analyzed. The cell shows a fast response time owing to high surface pretilt angle and very low residual DC less than 0.1 V although another polymer layer is formed above polymer alignment layers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.1
• /
• pp.49-60
• /
• 2017

In this paper, we presented the result of the study on high-power handling capability of the X-band circular waveguide cavity filter configured at the output of high power amplifier(120 W) for geostationary satellites. The dual mode circular waveguide cavity filter with 6th order is selected and the physical model of the filter is designed after determination of the size of resonator from mode chart. Multipactor margin analysis is performed by the SEM method and the VMF method. The result shows that the VMF method predicts lower multipactor breakdown thresholds than the SEM method. Evaluating the multipactor margin obtained by the VMF method to ECSS criteria, we could decide to perform multipactor test. The multipactor test conducted in ESA facility shows that multipactor did not occur even until the RF power increased up to 540 W. In consequence, by both analysis and test, we could verify that the X-band circular waveguide cavity filter has the sufficient high-power handling capability to operate on orbit.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.21 no.6
• /
• pp.25-32
• /
• 2021

In this study, it proposes a mode converter that is relatively easy to implement and can shorten the transmission line length of the final combining port and it was fabricated and tested by applying it to an 8-way spatial combiner. The proposed mode converter converts the signal converted from the doorknob-shaped circular disk connected to the ground into the TM₀₁ mode by opening it in the circular waveguide. The 8-way waveguide spatial combiner is designed and implemented so that 8 signals input from the H-plane are combined in a circular waveguide at the center, and the final combining mode is TM₀₁. The test results confirmed excellent performance with an insertion loss of less than 0.4dB and a combining efficiency of 95% or more. In addition, it was confirmed that it is suitable for high output by calculating the breakdown voltage and discharge threshold power of the new mode conversion structure through electric field analysis. The results confirmed through this study are expected to be applicable to high-power, high-efficiency SSPA in various fields in the future.

• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.26 no.4A
• /
• pp.753-759
• /
• 2006

To predict service life of concrete structures exposed to chloride attack, surface chloride concentration, diffusion coefficient of chloride ion, and chloride corrosion threshold value in concrete, are used as important factors. Of these, as the diffusion coefficient of chloride ion for concrete is strongly influenced by concrete quality and environmental conditions of structures and may significantly change the service life of structures, it is considered as the most important factor for service life prediction. The qualitative factors affecting the penetration and diffusion of chloride ion into concrete are water-cement (W/C) ratio, age, curing conditions, chloride ion concentration of given environment, wet and dry conditions, etc. In this paper the influence of W/C ratio and curing conditions on the diffusion characteristics of chloride ion in concrete was investigated through the chloride ion diffusion test. In the test, the voltages passing through the diffusion cell were measured by accelerated test method using potential difference, and then with the consideration of IR drop ratio the diffusion coefficient of chloride ion for concrete with different W/C ratios were estimated by Andrade's model. Furthermore, under different curing conditions formulas for the estimation of the diffusion coefficient of chloride ion have been proposed by the regression analysis considering the effect of W/C ratio and age.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.56-63
• /
• 2023

In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N₂) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.