• Title/Summary/Keyword: 일정연성도 응답스펙트럼

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Effect of Smooth Hysteretic Behavior for Inelastic Response Spectra (비탄성 응답스펙트럼에 대한 완만한 곡선형 이력거동의 영향)

  • Song, Jong-Keol
    • Journal of the Earthquake Engineering Society of Korea
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    • v.14 no.1
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    • pp.1-9
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    • 2010
  • The actual hysteretic behavior of structural elements and systems is closer to smooth hysteretic behavior than piece-wise linear behavior. This paper presents a methodology for computing the constant-ductility inelastic response spectra for smooth hysteretic behaviors. The effect of the hysteretic smoothness on the inelastic response spectra for acceleration, displacement, and input energy is evaluated. The results indicate that increasing smoothness in the hysteretic behavior decreases the inelastic response spectra.

Development of Capacity Spectrum Method for Shear Building to Estimate the Maximum Story Drift (전단빌딩의 최대 층간변위를 예측하기 위한 역량스펙트럼법 개발)

  • Kim, Sun-Pil;Kim, Doo-Kie;Kwak, Hyo-Gyoung;Ko, Sung-Hyuk
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.20 no.3
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    • pp.255-264
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    • 2007
  • In the current domestic and overseas standards concerning seismic design, especially on the capacity & demand spectra in the multi-story building, failure is caused more by story drift than by displacement; and the existing capacity spectrum method (CSM) does not make a close estimate of story drift because response is derived using displacement. Therefore, this paper proposes an improved CSM to estimate story drift and its direct effect on the collapse of structures, yet still maintaining the same advantage and convenience of the existing CSM about a most basic model of multi-story building: shear building. To establish its reliability, the proposed method is applied to an example model and results are then compared with those obtained through nonlinear time-history analysis.

Analysis of the Spectrum Intensity Scale for Inelastic Seismic Response Evaluation (비탄성 지진응답평가를 위한 Spectrum Intensity Scale 분석)

  • Park, Kyung-Rock;Jeon, Bub-Gyu;Kim, Nam-Sik;Seo, Ju-Won
    • Journal of the Earthquake Engineering Society of Korea
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    • v.15 no.5
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    • pp.35-44
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    • 2011
  • PGA (Peak Ground Acceleration) is the parameter which indicates the peak value for strong ground motion and is mainly due to the intensity of the seismic wave. Usually, seismic waves can consist of different characteristics and can have different effects on structures. Therefore, it may be undesirable that the effects of a seismic wave are evaluated only based on the PGA. In this study, time history analysis was executed with a single degree of freedom model for inelastic seismic analysis. The numerical model was assumed to be a perfect elasto-plastic model. Input accelerations were made with El Centro NS (1940), other earthquake records and artificial earthquakes. The displacement ductility demand and cumulative dissipated energy, which were calculated from other artificial earthquakes, were compared. As a result, different responses from other seismic waves which have the same PGA were identified. Therefore, an index which could reflect both seismic and structural characteristics is needed. The SI (Spectrum Intensity) scale which could be obtained from integration by parts of the velocity response spectrum could be an index reflecting the inelastic seismic response of structures. It can be possible to identify from correlation analysis among the SI scale, displacement ductility demand and cumulative dissipated energy that the SI scale is sufficient to be an index for the inelastic response of structures under seismic conditions.

A study on surface photovoltage characteristics of $IN_{0.03}Ga_{0.97}AS/GaAs$ epilayer ($IN_{0.03}Ga_{0.97}AS/GaAs$에피층의 표면 광전압 특성에 관한 연구)

  • 최상수;김기홍;배인호
    • Journal of the Korean Vacuum Society
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    • v.10 no.1
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    • pp.81-86
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    • 2001
  • We have investigated surface photovoltage characteristics of InGaAs grown by metalorganic chemical vapor deposition (MOCVD) method on semi-insulating GaAs. The splitted SPV signals from the substrate and epilayer were observed. The band gap energy of InGaAs was about 1.376 eV, The In composition(x) was determined by Pan's composition formula. The photovoltage gradually decreases with increasing frequency. This is because the transfer of charge from the surface states reduces. From the temperature dependent SPV measurement, we obtained Varshni and temperature coefficients. In spectrum of etched sample at 300 K, the 'A' peak below $E_o(GaAs)$ is related with residual impurity during sample growth.

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