• Journal of Oral Medicine and Pain
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• v.30 no.1
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• pp.121-129
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• 2005

In this experiment, eleven volunteers were followed up for 15 months after the injection of botulinum toxin type A on right and left masseter muscles. The measurement of masseter muscle atrophy for each volunteer was performed by CT(computed tomography) three times: before the injection, three and fifteen months after the injection. The thickness and area of muscle were measured in three positions which are 10 (position 1), 20 (position 2), and 40 mm (position 3) above the inferior border of mandible(the injection site was nearest the position 1). The thickness of masster muscle was decreased in all three positions three months after the injection, but no significant change was observed fifteen months after the injection. On the other hand, the area of masster muscle was decreased in all three positions three months after the injection. Furthermore, the area was decreased significantly in positions 1 and 2, but not in position 3 fifteen months after the injection. As a result, toxin is still in effect even fifteen months after the injection. Finally, the present study shows that the measurement of muscle area provides more precise informations than that of muscle thickness does.

• Journal of Wetlands Research
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• v.15 no.4
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• pp.471-476
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• 2013

The operating conditions of sludge disposal for sanitary paper manufacturing wastewater treatment plant were monitored on the basis of daily check sheets during the 3 years of operation. Generated wastes were mainly composed of 79% of sludge, 14% of ash, 5% of waste synthetic resin and 2% of etc. Maximum sludge was produced to 233 ton and the average was 113 ton daily, where the primary sludge occupied 85% and 15% for the secondary sludge. The concentration of coagulant for sludge dewatering was extremely exceeded and the additional experiment such as jar-test was required for the establishment of proper dosage. Presently, the generated sludges were partially treated outside and were also partly handled inside. In the future, most sludges will be expected to be treated to recycling material for the iron industry.

• The Journal of Engineering Geology
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• v.12 no.3
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• pp.319-332
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• 2002

This study is focused on the characterization of an effective hydraulic conductivity in each hydrogeologic unit assumed as an equivalent continuum medium in the granitic area. Four boreholes of 3" diameter were installed and a Multi-packer system was facilitated in the selected borehole. Various in-situ tests including the fracture logging, constant injection and fall-off tests, slug and pulse tests were carried out. A hydrogeologic unit was defined into the upper and lower zones based on the variation of fracture properties and hydraulic conductivities. The difference of the result obtained by the various hydraulic tests and the effective characterization techniques on rock mass permeability are also discussed. The effective hydraulic conductivity of the upper unit was measured by two times(5.27E-10 m/s~7.57E-10 m/s) that of the lower unit(2.45E-10 m/s~6.81E-10 m/s)through the constant injection and fall-off tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.184-184
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• 2011

반도체 전자 소자의 초고집적회로(VLSI, Very Large Scale Integrated Circuit)가 수년간 지속됨에 따라 실리콘 기반으로 하는 MOSFET 성능의 한계에 도달하게 되었다. 재료 물성, 축소, 소자 공정 등에 대한 원인으로 이를 극복하고자 하는 재료와 성능향상에 관한 연구가 진행되고 있다. 이에 기존 시스템의 전자의 전하 정보만을 응용하는 것이 아니라 전자의 스핀 정보까지 고려하는 스핀트로닉스 연구분야가 주목을 받고 있다. Spin-FET는 스핀 주입, 스핀 조절, 스핀측정 등으로 나뉘어 연구되고 있으며 이 중 스핀 주입의 효율 향상이 우선시 해결되어야 한다. 일반적으로 스핀 주입 과정에서 소스가 되는 강자성체와 스핀 확산 거리가 긴 반도체 물질과의 Conductance mismatch가 문제되고 있다. 이에 자성 반도체는 근본적인 문제를 해결하고 반도체와 자성체의 특성을 동시에 나타내는 물질로써, Si과 Ge (4족) 등의 반도체뿐만 아니라, GaAs, InP (3-5족), ZnO, ZnTe (2-6족) 등의 반도체 또한 많은 연구가 이루어지고 있다. 자성 반도체에서 해결해야 할 가장 큰 문제는 물질이 자성을 잃는 Curie 온도를 상온 이상으로 높이는 것이다. 이에 본 연구는 전이금속이 도핑된 4족 Si 반도체 박막을 성장하고 후처리 공정을 통하여 나타나는 구조적, 자기적 특성을 연구하였다. 펄스 레이저 증착 방법을 통하여 p-type Si 기판위에 전이금속 Fe이 도핑된 박막을 500 nm 로 성장하였다. 성장 온도는 $250^{\circ}C$로 하였고, 성장 분압은 $3 {\times}10^{-3}$Torr 로 유지하며 $N_2$ 가스를 사용하였다. 구조적 결과를 보기 위해 X선 회절 분석과 원자력 현미경 결과를 확인하였고, 자기적 특성을 확인하기 위해 저온에서 초전도 양자 간섭계로 조사하였다. XRD를 통해 (002)면, (004)면의 Si 기판 결정을 보았으며, Fe 관련된 이차상이 형성됨을 예측해 보았다. ($Fe_3Si$, $Fe_2Si$ 등) 초전도 양자 간섭계에서 20 K에서 측정한 이력 현상을 관찰하고, 온도변화에 따른 전체 자기모멘트를 관찰하였으며 이는 상온에서도 강자성 특성이 나타남을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.202-202
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• 2000

AC-PDP(Plasma Display Paner)는 기체 방전을 이용한 디스플레이로서 기체에 직접 노출되는 MgO 보호막의 2차전자 방출계수(${\gamma}$는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류, 결정 방향성과 표면오염상태 등에 영향을 받는다. 본 연구에서는 유리 기판위에 Al 전극을 증착, 에칭후 screen printing으로 유전체를 도포, 소성 한 21inch 규격의 test panel에 MgO 보호막을 E-Beam으로 5000$\AA$ 증착한 후 MgO 보호막을 대기에 노출되는 시간간격을 변수로 하여 대기 열처리 한 MgO보호막의 2차 전자방출계수를 ${\gamma}$-FIB(Focused Ion Beam) 장치를 이용하여 측정하였다. 그리고 대기 노출 간격은 1분, 5분, 20분으로 하여 2차 전자방출계수를 측정하였고, 2차전자방출계수 측정 시 가속전압은 50V에서 200V까지 변화를 주었으며, Ne+을 사용하여 1.2$\times$10-4Torr의 진공도를 유지하며 측정하였다. 또한 각각의 MgO막의 에너지 갭을 광학적 방법을 이용하여 구하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.192-193
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• 2005

• KSCE Journal of Civil and Environmental Engineering Research
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• v.29 no.1B
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• pp.35-45
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• 2009

In this study, a laboratory experiment has been performed on a S-curved channel with two curved sections. In the experiments, effects of 3-D velocity structures on mixing characteristics of tracer material were investigated. As a result, it was clearly noticed that the primary flow travels taking the shortest course of the meandering channel and has a very ununiform distribution at the bends. The secondary cell which was developing at the first bend disappears at the crossover, and then, at the next bend, secondary cell is re-developing in the opposite direction. The experimental results show that mixing of tracer is significantly affected by the combined action of ununiform primary flow and secondary cell. The ununiform primary flow separates the tracer cloud in the longitudinal direction, and the secondary cell further separates the retarding tracer cloud mainly in the transverse direction. As a result, these complex flow structures cause separation and spreading of tracer cloud both in the longitudinal and in the transverse directions. The measured dimensionless transverse dispersion coefficients calculated using 2-D routing procedure ranges 0.012-0.875, and is generally proportional to width to depth ratio (W/h). The predicted values calculated by the theoretical equation overestimate slightly the measured transverse dispersion coefficients.

• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.101-107
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• 1998

This paper is studied micro-defect characteristics by phosphorus 1MeV ion implantation and Rs, SRP, SIMS, XTEM for the RTA process was measured and simulated. As the dose is higher, the Rs is lower. When the dose are $1{\times}10^{13}/cm^2,\;5{\times}10^{13}/cm^2,\;1{\times}10^{14}/cm^2$, the Rp are $1.15{\mu}m,\;1.15{\mu},\;1.10{\mu}m$ respectively. As the RTA time is longer, the maximum concentration position is deeper from the surface and the concentration is lower. Before the RTA was done, we didn't observe any defect. But after the RTA process was done, we could observe the RTA process changed the micro-defects into the secondary defects. The simulation using the buried layer and connecting layer structure was performed. As results, the connecting layer had more effect than the buried layer to latch-up immune. Trigger current was more $0.6mA/{\mu}m$ and trigger voltage was 6V at dose $1{\times}10^{14}/cm^2$ and the energy 500KeV of connecting layer Lower connecting layer dose, latch-up immune characteristics was better.

• Korean Journal of Materials Research
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• v.6 no.3
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• pp.309-317
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• 1996

세가지 다른 방법을 이용하여 형성시킨 비정질 실리콘(SiH4 a-Si, Si2H6 a-Si, Si+ implanted SiH4 a-Si)들에 대한 저온 결정화 기구의 차이를 고전적 이론인 Avrami 식(X=1-exptn, X=결정화 분율, t=열처리 시간, n=지수)을 이용하여 검토하였다. Silane으로 형성된 비정질 실리콘의 결정화 과정에서는 Avrami 식에서의 n의 값이 2.0을 나타내고 있어, 결정성장이 이차원적으로 이루어지면서 핵생성률이 시간에 따라 감소하고 있음을 알 수가 있었다. Si+ 이온 주입에 의하여 형성된 비정질 실리콘의 결정화에서는 3.0의 지수 값이 얻어지고 있어, 정상상태의 핵생성과 함께 2차원적인 결정 성장이 이루어지고 있었다. Disilane으로 형성된 비정질 실리콘에 대한 결정화에서는 2.8의 지수값이 얻어져, 정상상태의 핵 생성이 우세하게 일어나는 2차원적인 결정성장이 일어나고 있음을 알 수 있었다. 또한 TEM을 이용하여 시간에 따라 변하는 핵생성률을 조사하여, Avrami 식의 적용이 타당성 있음을 증명하였다. 마지막으로, 최종 입자의 크기가 열처리 온도에 크게 영향을 받고 있지 않음을 확인하였다.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.302-309
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• 1995

We desinged a lattice-matched InGaAs/lnGaAsP quantum well laser that lases at $1.55{\mu}m$ at room temperature, and calculated the gain spectrum as a function of injected carrier density and temperature. For the calculation of band structures and momentum matrix elements, we used a transfer JIlatrix method based on a block-diagonalized 8x8 second-order Ii$.$ P Hamiltonian. This lattice-matched quantum well lases in transverse electric mode. As the temperature increases, the lasing wavelength gets longer, the transparency carrier density increases, and the differential gain is reduced. The temperature dependence of the gain spectrum comes from the temperature dependence of the band structure and that of the Fermi function, and the latter contributes dominantly.nantly.