• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.129-130
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• 2009

다이아몬드상 탄소 (Diamond-like Carbon; DLC) 박막은 광학재료의 보호 및 무반사 코팅, 저마찰 오버코팅 및 평판 표시소자의 전계방출 Tip 코팅 등 다양한 분야에 응용이 기대되고 있는 재료이다. 이온빔 방식의 DLC 박막 제조 장치를 이용하여 다양한 조건에서 DLC 박막을 제조하고 그 특성을 평가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.133-133
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• 2010

중성입자빔 입사장치(neutral beam injection, NBI)의 중성빔 에너지 효율은 이온원의 수소 이온밀도 분율이 결정한다. 이온원에서 만들어진 $H^+$, $H_2^+$ 그리고 ${H_3}^+$는 중성화 과정(neutralization) 중 해리(dissociation) 때문에 각각 입사 에너지의 1, 1/2 그리고 1/3을 가진 중성입자가 된다. 중성빔 에너지 효율 제고하기 위해서는 이온원의 전체 이온 중 단원자 수소 이온 밀도 증가가 필요하다. 유도결합형 수소 플라즈마 이온원에서 RF 안테나 주파수에 따른 플라즈마 밀도와 단원자 수소 이온 밀도 비율 변화를 관찰하였다. RF 플라즈마에서 가스 압력이 결정하는 전자의 운동량 전달 충돌 주파수 대비 높은 RF 안테나 주파수(13.56 MHz)와 낮은 RF 안테나 주파수(수백 kHz)의 전력을 인가하였으며, Langmuir 탐침, 안테나 V-I 측정기 그리고 QMS(quadrupole mass spectrometer)을 이용하여 플라즈마 특성을 진단하였다. 플라즈마 밀도와 수소 이온 밀도 분율은 플라즈마 가열 메커니즘과 수소 플라즈마 내 반응 메커니즘에 의해 결정된다. 플라즈마 가열 메커니즘에 따른 실험 결과에 대한 RF 안테나 주파수 효과는 플라즈마 트랜스포머 회로 모델을 통해 해석하였으며, 수소 플라즈마 내 반응은 0-D 정상 상태의 입자 및 전력 평형 방정식 결과로 해석하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.145-150
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• 2007

The $SiO_2$ and $TiO_2$ thin films for the multilayer interference filter application were manufactured by electron beam process. In case of electron beam process with ion source, the anode current was controlled by gas volume ratio of $O_2$ and Ar. Substrate temperature of electron beam deposition without ion source was increased from 100 to $250^{\circ}C$ with $50^{\circ}C$ increment. The surface roughness values of $SiO_2$ thin films was most low value at $200^{\circ}C$ substrate temperature and 0.2 A anode current respectively. And the surface roughness values of $TiO_2$ thin films was most low value at room temperature and 0.2 A anode current repectively. The refractive index of $SiO_2$ and $TiO_2$ thin films to be deposited with ion source was usually lower than that of thin films without ion source.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.239-245
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• 1995

Mn-Zn ferrite thin films were deposited on $SiO_2(1000 \AA)/Si(100)$ by ion beam sputtering using a single ion source. A mosaic target consisting of a single crystal(ll0) Mn-Zn ferrite with a Fe metal strip on it was used. As-deposited films without oxygen gas flow have a wiistite structure due to oxygen deficiencies, which originated from the extra metal atoms sputtered from the metal strips during deposition. The as-deposited films with oxygen gas flow, however, have a spinel structure with (111) preferred orientation. The crystallization of thin films was maximized at the ion beam extraction voltage of 2.lkV, at which the deposited films are bombarded appropriately by the energetic secondary ions reflected from the target. As the extraction voltage increased or decreased from the optimum value, the crystallinity of thin films becomes poor owing to a weak and severe bombardment of the secondary ions, respectively. Crystallization due to the bombardment of the secondary ions was also maximized at the beam incidence angle of $55^{\circ}$. The as-deposited ferrite thin films with a spinel structure showed ferrimagnetism and had an in-plane magnetization easy axis.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.401-404
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• 2010

The ion-beam induced changes in the characteristics of gadolinium doped ceria (GDC) pellets have been studied by UV-visible spectroscopy (UV-vis), SEM, and XRD. Implanted ions were protons or Xe ions with the energy of 120 keV or 5 MeV. Densely sintered pristine GDC pellets have cubic fluorite structure and are brown in color. As the ion irradiation proceeded, its color gradually turned into light black and finally into dark black. XRD patterns of GDC pellets were closely related with ion energy and the penetration depth of X-ray. It showed that upon the ion irradiation (120 keV) the lattice parameter of the cubic fluorite phase just beneath the surface is increased.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.96-101
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• 2008

The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by Ion-Beam-Assisted Deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, Oxygen-Neutral-Beam-Assisted Deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen neutral beam energy of 300eV. The surface morphology of MgO thin film was also analyzed using AFM (Atomic Force Microscopy) and SEM (Scanning Electron Microscopy).

• 동위원소뉴스
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• no.12 s.120
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• pp.4-6
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• 2006

• Ceramist
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• v.16 no.3
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• pp.71-79
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• 2013

• Ceramist
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• v.3 no.1
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• pp.11-15
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• 2000

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.9-17
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• 1994

Optical properties of $TiO_2$ thin films prepared by ion-beam assisted deposition(1BAD) were investigated. The result shows that the refractive index of IBAD TiOL thin films measured by an envelope method is closer to that of the corresponding bulk than that of conventionally deposited $TiO_2$ thin films and the packing density of IBAD $TiO_2$ thin films measured by a vacuum-to-air spectral shift of films increases drastically. The vacuum-to-air spectral shift of an IBAD $(TiO_2/SiO_2)$ multilayer interference filter was negligible as compared to that of a conventional interference filter and so the IBAD filter is denser and more stable optically than the conventional filter. Also it is observed that the IBAD and conventional $TiO_2$ thin films are stoichiometric and amorphous.