• Title/Summary/Keyword: 유전완화

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Electric-Field-Induced Lattice Distortion and Related Properties in Relaxor Ferroelectrics (완화형 가유전체에서 전계인가에 따른 격자왜곡과 강유전물성의 상관관계)

  • 박재환;박재관;김윤호
    • Korean Journal of Crystallography
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    • v.12 no.1
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    • pp.14-19
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    • 2001
  • Effects of electric-field-induced lattice distortion on the polarization and strain were investigated in Pb(Mg/sub 1/3/Nb/sub 2/3)O₃ relaxor ferroelectric ceramics in the temperature range of -50℃∼90℃. The ratio of residual strain and polarization (S/sub r//P/sub r/ rarely depends on the temperature. However, the ratio of the electric field included strain and polarization (S/sub induced//P/sub induced/) increased as the temperature decreases below phase transition temperature. To explain these experimental results, a simple rigid ion model concentrating on only Bo/sub 6/ octahedron was suggested.

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Multi vehicle OD trip matrix estimation from traffic counts (관측교통량을 이용한 다차종 OD 통행량 추정)

  • 백승걸;임용택;김현명;임강원
    • Journal of Korean Society of Transportation
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    • v.19 no.2
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    • pp.61-72
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    • 2001
  • 기존의 링크교통량으로부터 OD추정모형은 기존 OD에 대한 추정의 종속성이 커, 기존 OD나 관측링크교통량의 오차에 따라 추정결과가 일관적이지 않은 문제점을 가지고 있다. 또한 관측링크교통량의 정확도가 중요함에도 불구하고 차종구분 없이 링크교통량을 이용하여 정보의 손실을 초래하였고 결과적으로 OD 추정력을 저하시켰다. 그렇지만 다차종 링크교통량으로부터 다차종 OD를 구하는 연구는 거의 없었으며, 그 추정결과가 단일차종에 대한 추정결과와 어떻게 다른지에 대한 연구도 전무하였다. 본 연구의 목적은 기존의 OD 추정모형이 기존 OD에 대해 종속성을 가지며 차종구분 없이 모형을 구성함으로써 추정력의 저하를 초래하였음을 밝히고, 이에 대한 대안으로 종속성 문제를 완화하고 차종구분을 통해 OD 추정모형의 추정력을 증진시키자 하는 것이다. 이를 위해 유전알고리즘을 이용한 다차종 OD행렬 추정모형(GAMUC)을 구축하고, 이를 기존의 바이레벨 모형의 IEA 알고리즘 및 다차종으로 확장한 모형(IEAMUC)과 게임이론측면에서 검토하였으며, 사례네트워크에 대해 각 기법을 비교하였다. 본 연구는 유전알고리즘을 이용한 OD 추정기법을 축도로에 적용한 임용택 등(2000)과 이를 네트워크로 확장한 백승걸 등(2000)의 연구를 다차종으로 확장한 것이다. 사례분석 결과 기존 OD의 오차변화나 관측링크교통량의 오차변화 등에 있어 GAMUC가 IEA나 IEAMUC보다 추정력이 양호하여, 실제 OD를 알 수 없는 도시부 네트워크에서 GAMUC 모형의 적용력이 우수하였다. 또한 차종을 구분하지 않은 기존 모형은 실제 OD와는 전혀 다른 OD 구조를 도출할 수 있음을 보였으며, 단일 차종을 여러 차종으로 구분하여 OD를 추정하는 것이 더 양호한 추정력을 확보하는 것으로 나타났다.

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Electronic Properties of Polymer LB Films for the Metal Ion Concentration (금속이온 농도에 의한 고분자 LB막의 전자 특성)

  • 박재철;정상범;유승엽
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.37 no.2
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    • pp.1-5
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    • 2000
  • We have investigated dielectric properties of IMI-O LB films for the effect of complex concentration by electrical conductivity, dielectric constant and dielectric relaxation time at different frequencies. In the surface pressure-area$\pi$-A) isotherms for the increase of $FE^{3+}$ concentration, the molecular area was expanded with $FE^{3+}$concentration increase by electrostatic repulsion between the polymer chains and hydrophobic increase of ionic strength. In the I-V characteristics, it is found that the limiting area has effects on the change of conductivity And, the dielectric relaxation time decreased for increase of the $FE^{3+}$concentration.

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A Study on the Dielectric Properties of the $Pb(Mb_{1/3}Nb_{2/3})O_3$-$BaTiO<_3$-$CaZrO<_3$Ceramics ($Pb(Mb_{1/3}Nb_{2/3})O_3$-$BaTiO<_3$-$CaZrO<_3$세라믹의 유전특성에 관한 연구)

  • 김수하;배선기
    • Electrical & Electronic Materials
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    • v.10 no.10
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    • pp.1041-1047
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    • 1997
  • In this paper the dielectric properties of (0.8-x)Pb(Mb$_{1}$3//Nb/2/3)O$_3$/BaTiO$_3$-CaZrO$_3$(x=0.1, 0.15, 0.2, 0.25) ceramics were investigated. Specimens were prepared by the conventional mixed oxide method and sintering temperature and time were 1000~115$0^{\circ}C$ 2hr, respectively. The structural and dielectric properties with variation of sintering temperature and composition were investigated. All the specimens sintered at 115$0^{\circ}C$ for 2hr showed the highest value of 1043. With increasing the contents of CZ and frequency dielectric constant was decreased and which was decreased with increasing temperature from 3$0^{\circ}C$ to 15$0^{\circ}C$.

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A study on the dielectric and electrical conduction properties of$(Sr_{1-x}.Ca_x)TiO_3$ grain boundary layer ceramics ($(Sr_{1-x}.Ca_x)TiO_3$입계층 세라믹의 유전 및 전기전도특성에 관한 연구)

  • 최운식;김충혁;이준웅
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.611-618
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    • 1995
  • The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

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Dielectric Properties in Na2O-B2O3-SiO2 Glass Containing CoO (CoO를 함유한 Na2O-B2O3-SiO2 계 유리의 유전적 특성)

  • Lee, Chanku;Lee, Sudae;Joung, Maeng-Sig
    • Journal of Korean Ophthalmic Optics Society
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    • v.5 no.1
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    • pp.49-53
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    • 2000
  • Sodium borate silicate glass of composition $10Na_2O-39B_2O_3-50SiO_2-CoO$ and $20Na_2O-14B_2O_3-65SiO_2-CoO$ were prepared by melting oxide mixtures in alumina crucible at $1210^{\circ}C$ in an electric furance in air for 2h, and then quenching in air. The dielectric behavior of the quenched glasses are the subject of the present work. Properties such as dielectric constant and resistivity as a function frequency and temperature are reported. From the dielectric spectra, the glass phase transition temperature has been found to decrease at a rate $Na_2O$ 20 mol% and the dielectric constants increase with increasing $Na_2O$ content. The frequency dependent resistivity response of glass exhibits a non-Debye type relaxation.

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Dielectric and Pyroelectric Properties for 0.65PbMg1/3Ta2/3)O3-0.35PbTiO3 Solid Solution Modified with Ag2O (Ag2O가 첨가된 0.65PbMg1/3Ta2/3)O3-0.35PbTiO3 고용체의 유전, 초전 특성)

  • Kim, G.B.
    • Journal of the Korean Vacuum Society
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    • v.17 no.5
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    • pp.442-447
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    • 2008
  • Ferroelectric samples of the 0.65Pb$(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ modified with $Ag_2O$ were prepared by sintering at $1200^{\circ}C$ for 4 h. The fractured surface of sintered pellets were examined by scanning electron microscopy(SEM). The dielectric constant, loss, and pyroelectric coefficient of the ceramics samples were determined. The dielectric and pyroelectric properties could be improved with the addition of small amount of $Ag_2O$ up to 0.2 mol%. The dielectric and pyroelectirc peak temperatures are continuously shifted to lower temperature with addition of small amounts of $Ag_2O$.

A Study of Electrostrictive Polymer(EP) Actuator Using Dielectric Elastomers (유전성 탄성체를 이용한 전기변형 고분자 구동체의 특성 연구)

  • 황성덕;이경섭;김홍경;최혁렬;김훈모;전재욱;이영관;남재도
    • Polymer(Korea)
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    • v.26 no.1
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    • pp.113-120
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    • 2002
  • Electrostriction is the phenomenon that a material is strained due to Maxwell stress developed by the applied voltage. In many electrostrictive materials, especially polymeric elastomers can produce large deformation and force due to their low elastic modulus. In this study, polyurethanes and acrylic rubber with compliant electrodes were used as electrostrictive polymer(EP) actuator. Actuation characteristics of the EP actuators with different physical properties of dynamic modulus and dynamic dielectiric constant were analyzed under AC field. The classical laminate theory was also used to simulate the actuation process in relation to the geometry and the physical properties of the actuators.

Electrical Conduction Mechanism of (Ba, Sr) $TiO_3$ Thin Film Capacitor in Low Electric Field Region (고유전 (Ba, Sr) $TiO_3$ 박막 커패시터의 저전계 영역에서의 전기전도기구)

  • Jang, Hoon;Jang, Byung-Tak;Cha, Seon-Yong;Lee, Hee-Chul
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.6
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    • pp.44-51
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    • 1999
  • The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.

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