• Progress in Medical Physics
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• v.9 no.1
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• pp.11-21
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• 1998

Circular metal electrodes were vacuum-deposited with chromium on the both sides of Teflon-FEP and PET film characteristic of electret and the physical properties of the two polymers were observed during an irradiation by gamma-ray from $\^$60/Co. With the onset of irradiation of output 25.0 cGy/min the induced current increased rapidly for 2 sec, reached a maximum, and subsequently decreased. A steady-state induced current was reached about in 60 second. The dielectric constant and conductivity of Teflon-FEP were changed from 2.15 to 18.0 and from l${\times}$l0$\^$-17/ to 1.57${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/, respectively. For PET the dielectric constant was changed from 3 to 18.3 and the conductivity from 10$\^$-17/ to 1.65${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/. The increase of the radiation-induced steady state current I$\^$c/, permittivity $\varepsilon$ and conductivity $\sigma$ with output(4.0 cGy/min, 8.5 cGy/min, 15.6 cGy/min, 19.3 cGy/min) was observed. A series of independent measurements were also performed to evaluate reproducibility and revealed less than 1% deviation in a day and 3% deviation in a long term. Charge and current showed the dependence on the interval between measurements, the smaller the interval was, the bigger the difference between initial reading and next reading was. At least in 20 minutes of next reading reached an initial value. It may indicate that the polymers were exhibiting an electret state for a while. These results can be explained by the internal polarization associated with the production of electron-hole pairs by secondary electrons, the change of conductivity and the equilibrium due to recombination etc. Heating to the sample made the reading value increase in a short time, it may be interpreted that the internal polarization was released due to heating and it contributed the number of charge carriers to increase when the samples was again irradiated. The linearity and reproducibility of the samples with the applied voltage and absorbed dose and a large amount of charge measured per unit volume compared with the other chambers give the feasibility of a radiation detector and make it possible to reduce the volume of a detector.

• Journal of environmental and Sanitary engineering
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• v.15 no.1
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• pp.25-33
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• 2000

The new ion exchange resin was synthesized from chloromethylated styrene-1,4-divinylbenzene(DVB) with 1-aza-15-crown-5 macrocyclic ligand by substitution reaction. The effect of pH, time, dielectric constant of solvent and cross-linked of the matrix on the adsorption for $UO_2^{2+}$, $Ca^{2}$ and $Lu^{3+}$ was investigated. The metal ion was not adsorbed on the resins below pH 3 but above pH 4 fast adsorption behavior was showed. The optimum equilibrium time for adsorption of metallic ions was two hours. The adsorption selectivity determined in ethanol matrix was in increasing order $UO_2^{2+}>Ca^{2}>Lu^{3+}$. The adsorption power was in the order of 1%, 2%, 10% and 20% -crosslinked resin, but adsorption properties of resins decreased in proportion to the order of dielectric constant of solvents used. In addition, these metal ions could be separated in the column packed with 1% crosslinked resin by pH2.5 $HNO_3$ as an eluent.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.450-455
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• 2000

For further scaling down of the silicon devices, the application of low dielectric constant materials instead of silicon oxide has been considered to reduce power consumption, crosstalk, and interconnection delay. In this paper, the effect of $O_2/SF_6$ plasma chemistry on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. The etch rate of polyimide decreases with the addition of $SF_6$ gas due to formation of nonvolatile fluorine compounds inhibiting reaction between oxygen and hydrocarbon polymer, while applying substrate bias enhances etching process through physical attack. However, addition of small amount of $SF_6$ is desirable for etching topography. $SiO_2$ hard mask for polyimide etching is effective under $O_2$plasma etching(selectivity~30), while $O_2/SF_6$ chemistry degrades etching selectivity down to 4. Based on the above results, $1-2\mu\textrm{m}$ L&S PI2610 patterns were successfully etched.

• Journal of the Korea Concrete Institute
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• v.21 no.2
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• pp.199-207
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• 2009

Many researches on electromagnetic (EM) properties like dielectric constant and conductivity are performed since they can be characterized in nonmetallic cement-based material such as mortar and concrete. However, they are much affected by the moisture so that the behaviors of EM properties are to be clearly understood. In this paper, measurements for saturation and EM properties are performed for cement mortar specimens with five different water to cement (W/C) ratios including basic tests like compressive strength and porosity measurement. Every saturated specimens are exposed to room condition and the changes in EM properties caused by decreasing saturation are analyzed. In the saturated condition, higher measurement of EM properties are evaluated in the specimens with higher porosity, however this relationship is adversely changed with drying process. Since the pores without filled water causes the decreases in EM properties, the measurements show stable and linear increment with the lower W/C ratios. Furthermore, the increasing ratios of EM measurements with W/C ratio are shown with saturation and the relationships between them are derived through regression analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.106-106
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• 1999

반도체 소자가 소브마이크론 이하로 집적화 되어감에 따라, RC 신호 지연 및 간섭 현상, 전력 소비의 증가 문제가 심각하게 대두되고 있다. 이러한 문제를 개선하기 위해서는, 현재 층간 절연막으로 상용화되어 있는 SiO2 박막을 대체할 저유전율 박막의 개발이 필수적이며, 많은 연구자들이 여러 가지 새로운 유기물질과 무기물질은 제안하고 있다. 반도체 공정상의 적합성을 고려할 때, 이들 여러물질 중에서 알킬기를 함유한 SiO2 박막(이하 'Si-O-C-H 박막'으로 표기)에 많은 관심이 집중되고 있다. Si-O-C-H 박막은 알킬기에 의해 형성된 나노 스케일의 기공에 의해 작은 유전율을 가지게 된다. 따라서, 박막내의 알킬기의 함유량이 많을수록 보다 작은 유전율을 얻을 수 있다. 그러나 과다한 알킬기의 함유는 Si-O-C-H 박막의 열적 특성을 열화시키는 부정적인 효과도 있다. 본 연구에서는 bis-trimethylsilylmethane(BTMSM, H9C3-Si-CH2-Si-C3H9) precursor를 이용하여 Si-O-C-H 박막을 증착하였다. BTMSM precursor의 중요한 특징중 하나는, 두 실리콘 원자 사이에 Si-CH2 결합이 존재한다는 사실이다. Si-CH2 결합은 양쪽의 Si에 의해 강하게 결합되어 있어서, BTMSM precursor를 사용하여 Si-O-C-H 박막은 유전상수도 작을 뿐 아니라, 열적으로도 안정된 특성이 얻어질 것으로 기대된다. Si-O-C-H 박막의 열적 안정성을 평가하기 위하여, 고온 열처리 전후의 FT-IR 스펙트럼 분석과 C-V(capacitance-voltage) 측정에 의한 유전상수 변화를 살펴보았다. 또한 증착된 박막의 미세구조 및 step coverage 특성 관찰을 위하여 SEM(scanning electron microscopy) 및 TEM(transmission electron micfroscopy) 분석을 하였다. 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다. 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.phology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.784-787
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• 2002

We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.2A
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• pp.70-79
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• 2003

A theoretical presentation of evanescent coupling is offered with respect to the refractive indexes between a side polished optical fiber and an infinitely planar waveguide with a conductor cladding(PWGCC). The PWG is suspended at a constant distance from an unclad fiber core and attached with the perfect conductor(PEC) on one side. The behavior of the distributed coupler is examined using a coupled mode model, which takes account of the two dimensions of the waveguide configuration. The coupling and propagation of light were found to depend on both the relationship between the refractive index values of each structure and the configuration of the side polished fiber used in the PWGCC. The spreading of light in the unconfined direction of the PWGCC is described in terms of a simple geometrical interpretation of the synchromization condition that is in agreement with a previous investigation of the problem based on the coupled-mode theory(CMT). The power of the light propagation in the fiber decreased exponentially along the fiber axis as it was transferred to the PWGCC.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.851-855
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• 1997

본 실험에서는 저유전율 층간절연물질로서 SiOF박막을 ECR plasma CVD를 이용하여 증착하였다. 또한 증착시에 발생시킨 플라즈마의 특성 분석을 위하여 Langmuir probe를 반응챔버에 부착하여 플라즈마 밀도, 마이크로파 전력은 700W, 기판온도는 30$0^{\circ}C$에서 행하였다. 증착된 SiOF 박막을 분석한 결과, 가스유량비(SiF$_{4}$/O$_{2}$)가 0.2에서 1.6으로 증가하였을 때 불소의 함량은 약 5.3at%에서 14.5at%로 증가하였으며, 굴절률은 1.501에서 1.391로 감소하였고 이는 불소 첨가에 의한 박막의 밀도감소에 의한 것으로 생각된다. 또한 박막의 유전상수는 가스유량비가 1.0(11.8qt.% F함유)일 때 3.14였다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.8
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• pp.61-67
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• 2010

A characterization procedure for analyzing symmetric coupled MIS(Metal-Insulator-Semiconductor) transmission line is used the same procedure as a general single layer symmetric coupled line with perfect dielectric substrate from the extraction of the characteristic impedance and propagation constant for even- and odd-mode. In this paper, an analysis for a new substrate shielding symmetric coupled MIS structure consisting of grounded crossbar at the interface between Si and SiO2 layer using the Finite-Difference Time-Domain (FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded crossbar lines over time-domain signal has been examined. Symmetric coupled MIS transmission line parameters for even- and odd-mode are investigated as the functions of frequency, and the extracted distributed frequency-dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor for the new MIS crossbar embedded structure are also presented. It is shown that the quality factor of the symmetric coupled transmission line can be improved without significant change in the characteristic impedance and effective dielectric constant.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.12 s.354
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• pp.83-88
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• 2006

In this paper, we propose a new cross bar embedded structure for improvement of attenuation characteristics along the different lossy media. A general characterization procedure based on the extraction of the characteristic impedance and propagation constant for analyzing a single MIS(Metal-Insulator-Semiconductor) transmission line used and an analysis for a new substrate shielding MIS structure consisting of grounded crossbars at the interface between Si and Sio2 layer using the Finite-Difference Time-Domain(FDTD) technique is used. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded cross bar lines over time-domain signal has been examined. The extracted, distributed frequency-dependent transmission line parameters as well as the line voltages and currents, and also corresponding equivalent circuit parameters have been examined as function of frequency. It is shown that the quality factor of the transmission line can be improved without significant changes in the characteristic impedance and effective dielectric constant.