• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.695-699
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• 2001

Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.370-378
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• 2017

A fluid model of 2D axis-symmetry based on inductively coupled plasma (ICP) reactor using $N_2/NH_3/SiH_4$ gas mixture has been developed for hydrogenated silicon nitride ($SiN_x:H$) deposition. The model was comprised of 62 species (electron, neutral, ions, and excitation species), 218 chemical reactions, and 45 surface reactions. The pressure (10~40 mTorr) and gas mixture ratio ($N_2$ 80~96 %, $NH_3$ 2~10 %, $SiH_4$ 2~10 %) were considered simulation variables and the input power fixed at 1000 W. Different distributions of electron, ions, and molecules density were observed with pressure. Although ionization rate of $SiH_2{^+}$ is higher than $SiH_3{^+}$ by electron direct reaction with $SiH_4$, the number density of $SiH_3{^+}$ is higher than $SiH_2{^+}$ in over 30 mTorr. Also, number density of $NH^+$ and $NH_4{^+}$ dramatically increased by pressure increase because these species are dominantly generated by gas phase reactions. The change of gas mixture ratio not affected electron density and temperature. With $NH_3$ and $SiH_4$ gases ratio increased, $SiH_x$ and $NH_x$ (except $NH^+$ and $NH_4{^+}$) ions and molecules are linearly increased. Number density of amino-silane molecules ($SiH_x(NH_2)_y$) were detected higher in conditions of high $SiH_x$ and $NH_x$ molecules density.

• Journal of the Korean institute of surface engineering
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• v.41 no.3
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• pp.83-87
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• 2008

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.

• Journal of Environmental Health Sciences
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• v.45 no.3
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• pp.258-266
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• 2019

Objectives: In this study, blood lead was analyzed using graphite furnace atomic absorption spectrometry (GF-AAs) and inductively coupled plasma mass spectrometry (ICP-MS). We tried to examine the difference and consistency of the analytical values and the applicability of the analytical method. Methods: We selected 57 people who agreed to participate in this study. After confirming the linearity of the calibration standard curves in GF-AAs and ICP-MS, the concentrations of lead in quality control material and samples were measured, and the degree of agreement was compared. Results: The detection limit of the ICP-MS was lower than that of GF-AAs. The coefficient of variation of reference materials was shown to be stable in the ICP-MS and GF-AAs. When the correspondence between the two equipments was verified by bias of the analysis values, a concordance was shown, and approximately 98% of the ideal reference lines were present within ${\pm}40%$ of the deflection. Conclusion: GF-AAs showed high sensitivity to single heavy metal analysis, but it took much time and showed higher detection limit than ICP-MS. Therefore, it would be considered necessary to switch to ICP-MS analysis method, considering that the level of lead exposure is gradually decreasing.

• Journal of Soil and Groundwater Environment
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• v.23 no.6
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• pp.73-81
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• 2018

Inductively coupled plasma-mass spectrometry (ICP-MS), one of the most commonly used instruments for metal analysis, was used to determine total uranium in soil. The method was named as "Modified ASTM C1345-96". When comparing with ASTM C1345-96, digestion time (2~3 days) was shorten to 7 hours and the treatment in furnace was eliminated. In analyses of 26 field soil samples, there was a significant difference in the average concentration of total uranium between modified ASTM C1345-96 and ASTM C1345-96 (F : 6.22 > Fc : 4.03, significance level : 0.05, n=26). The average concentration of modified ASTM C1345-96 was 1.8 times larger than that of ASTM C1345-96. In addition, modified ASTM C1345-96 was compared with other acid digestion methods for soil including ISO 11466, Modified ISO 11466, US EPA-3051, US EPA-3051A and US EPA-3052 using a certificated reference material (SRM 2711a, NIST) and field soil samples with different level of organic matter content (1.6%, 5.8%, 10.6%). Modified ASTM C1345-96 showed the best accuracy of 93.01% for SRM 2711a. Also, modified ASTM C1345-96 showed the higher extraction rates than other digestion methods by 11~45%.

• Journal of Conservation Science
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• v.35 no.3
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• pp.187-196
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• 2019

Bronzes excavated from a Gulsansa temple site in Gangneung were investigated in order to study the production of technology and provenance in this area. The bronze artifacts were discovered to consist of copper-tin or copper-tin-lead alloys using chemical analysis(EDS and EPMA). The excavated bronzes were manufactured using a casting or hammering process, and a bronze belt was gilded with gold foil. The provenance of 25 bronzes was studied using lead isotope analysis(TIMS and LA-MC-ICPMS). The results reveal the use of raw materials found near the excavated site. The object of this study was to investigate the manufacturing techniques and provenance in Gangneung without the need for a lot of data. Our results will contribute to the study of Gulsansa and bronze artifacts in Goryo(12-13th century).

• Clean Technology
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• v.16 no.1
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• pp.19-25
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• 2010

In this work, the conversion of crystalline cellulose into polyols in the presence of hydrogen was examined over noble metal (Pt, Ru, Ir, Rh, and Pd) catalysts supported on activated carbon. For comparison, Pt/${\gamma}-Al_2O_3$ and Pt/H-mordenite were also investigated. Several techniques: $N_2$ physisorption, X-ray diffraction(XRD), inductively-coupled plasma-atomic emission spectroscopy (ICP-AES), temperature-programmed reduction with $H_2$ ($H_2$-TPR) and CO chemisorption were employed to characterize the catalysts. The cellulose conversion was not strongly dependent on the types of the catalyst used. Pt/AC showed the highest yields to polyols among activated carbon-supported noble metal catalysts, viz. Pt/AC, Ru/AC, Ir/AC, Rh/AC and Pd/AC.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.9
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• pp.611-615
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• 2001

Y$_2$O$_3$ thin films have been proposed as a buffering insulator of metal/ferroelectric/insulator/semiconductor field effect transistor(MFISFET)-type ferroelectric random access memory (FRAM). In this study, $Y_2$O$_3$ thin films were etched with inductively coupled plasma(ICP). The etch rates of $Y_2$O$_3$ and YMnO$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were investigated by varying Cl$_2$/(Cl$_2$＋Ar) gas mixing ratio. The maximum etch rate of $Y_2$O$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were 302$\AA$/min, and 2.4 at Cl$_2$/(Cl$_2$＋Ar) gas mixing ratio of 0.2 respectively. Optical emission spectroscopy(OES) was used to understand the effects of gas combination on the etch rate of $Y_2$O$_3$ thin film. The surface reaction of the etched $Y_2$O$_3$ thin films was investigated by x-ray photoelectron spectroscopy (XPS). XPS analysis confirmed that there was chemical reaction between Y and Cl. This result was confirmed by secondary ion mass spectroscopy(SIMS) analysis.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.11-16
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• 2002

In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.

• Analytical Science and Technology
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• v.27 no.2
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• pp.92-99
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• 2014

Interferences were removed using anion exchange solid phase extraction (AE SPE) in quantification of selenoproteins in Korean human blood serum with affinity high performance liquid chromatography (AF HPLC)-inductively coupled plasma/mass spectrometry (ICP/MS). The average selenium level obtained for healthy Koreans was $94.3{\pm}2.3ngg^{-1}$ using isotope dilution method. AE SPE was coupled to AF column to separate 3 selenoproteins, glutathione peroxidase GPx, selenoprotein SelP, and selenoalbumin SeAlb. Post column isotope dilution was employed to quantify the proteins. The certified reference material of human blood serum BCR-637 was analyzed to give total selenoprotein concentration of $85.4{\pm}3.4ngg^{-1}$, which agreed well with the reference value of $81{\pm}7ngg^{-1}$. The pooled concentration of GPx, SelP, and SeAlb from healthy Koreans (n=20) was $12.1{\pm}1.4ngg^{-1}$, $57.2{\pm}2.0ngg^{-1}$, and $20.0{\pm}1.9ngg^{-1}$, respectively. The sum of selenoproteins is $89.3ngg^{-1}$, which is about the same as the total selenium concentration of $94.3ngg^{-1}$. The fact suggests that selenium in blood serum is mostly consisted of selenoproteins. After the removal of interference, GPx showed a significant decrease (more than 50%) from $25.0ngg^{-1}$ to $12.1ngg^{-1}$. It was identified that the interference in blood serum was mostly from GPx and the use of AE SPE was proven to be efficient in eliminating Cl and Br that cause interference to GPx.