• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.7 no.1
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• pp.33-38
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• 2009

An experiment for uranium sorption onto fresh and weathered biotites was performed. After centrifugation, concentrations of uranium in the supernatants were analyzed using ICP-MS, and biotite samples were investigated using XRD and SEM. With powdered biotites (<3 mm in size), we have conducted uranium sorption experiments about fresh and weathered biotites to obtain uranium sorption amounts in various pH conditions. The uranium sorption was not high at a low pH (e.g., pH 3), but increased with increasing pH. There were lower uranium sorption by the weathered biotites than by the fresh ones, and the difference was much larger at higher pH (e.g., pH 11). The lower sorption values of uranium by the weathered biotites may be caused by a change of mineral surfaces and a chemical behavior of surrounding dissolved elements. It seems that the uranium-mineral interaction has been diminished, especially, in the weathered biotite by a destruction and dissolution of preferential sorption sites on the mineral surfaces and by the colloidal formation from dissolved elements.

• Conservation Science in Museum
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• v.2
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• pp.69-76
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• 2000

This study, a part of scientific analysis of the 23 Neolithic red earthenwares excavated from southeastern coast and islands. We analyzed earthenware through statistical method and hardness analysis of clay, following the analysis of clay composition, its firing temperature, pigment composition and its thickness. Clay composition was analyzed by using ICP-AES and XRF, and then Principal Component Analysis (one of multivariate methods) was used for classification. As a result, clay of the earthenware was classified into 3 groups(Bumbang, Youkjido and other sites). In addition, hardness analysis of pigment and clay based on the depth of earthenware surface showed that pigment layer containing lots of Fe₂O₃ had higher hardness than clay part, which can be interpreted that Fe₂O₃ contributes to raising hardness in case of high temperature firing. The fact that pigment hardness is higher than that of clay part implies that pigment was applied before firing.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.171-177
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• 2002

In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.1-6
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• 2000

In this study, the effects of the addition of $N_2$ gas into the $Cl_2$ (90)/Ar(10) gas mixture, which has been proposed as the optimized etching gas combination, for etching of platinum was performed. The selectivity of platinum film to $SiO_2$ film etch mask increased with the addition of $N_2$ gas, and etch profile over 75 $^{\circ}$ could be obtained when 20 % additive $N_2$ gas was added. These phenomena were interpreted as the results of a formation of blocking layer such as Si-N or Si-O-N on the $SiO_2$ mask. The maximum etch rate of Pt film and selectivity of Pt to $SiO_2$ are 1425 ${\AA}$/min and 1.71, respectively. These improvements were considered to be due to the formation of more volatile compounds such as Pt-N or Pt-N-Cl.

• Journal of the Korean institute of surface engineering
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• v.46 no.4
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• pp.168-174
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• 2013

In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.107-107
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• 1998

GaN 에피택시 층의 전기적, 광학적 특성 및 표면 형상의 향상을 위한 전처리 공 정으로서 사파이어 기판의 질화 처리가 많이 행해지고 있는데 이는 표면에 질화 충올 형성시킴으로서 GaN 충과의 계면에너지 및 격자상수 불일치를 줄여 GaN 충의 성장을 촉진시킬 수 있기 때문이다 본 실험에서는 고 진공 하에서 유도 결합 플라즈마를 이용하여 사파이어 기판의 질화 처리를 행한 후 XPS와 AFM을 이용하여 기판 표면의 질소 조성과 표면 형상을 관찰하였다. 기판 표면의 질소 조성은 질소 가스의 유입량과 기판의 온도보다 칠화 시 간 및 RF-power에 의해 크게 좌우되나 표면 형상은 기판의 온도에 크게 영향올 받는 것으로 나타났다. 따라서 본 실험에서는 기판의 온도를 낮춤으로서 protrusion이 없는 매끈한 표면의 질화 충을 얻올 수 있었다. 핵생성 충의 성장 없이 450 oC의 저온에서 GaN 충올 성장시킨 결과 육방 대청성 의 wurtzite구조를 가지며 bas허 plane이 사파이어 기판과 in-plane에서 300 회전된 관계 를 갖고 있는 것올 XRD -scan으로 관찰하였다. 또한 GaN 충의 성장이 진행됩에 따라 결정성이 향상되고 있는 것이 뼈S ali맹ed channeling 실험올 통해 관찰되었으며 이는 G GaN 충의 두께 중가에 따라 결정성이 향상된다는 것올 의미한다 사파이어 기판의 질 화 처 리 시 간이 증가함에 따라 후속 성 장된 GaN 층의 bas외 pI뻐e에 대 한 XRD -rocking c curve의 반치폭이 감소하는 것으로 나타났는데 이는 기판의 표면이 질화 충으로 전환 됨에 따라 각 GaN island의 c-축이 잘 정렬됨올 의미한다. 또한 AFM으로 ~이 충의 표 면 형상올 관찰한 결과 기판의 질화 처리가 선행될 경우 lateral 방향으로의 G뼈 충의 성장이 촉진되어 큰 islands로 성장이 일어나는 것으로 관찰되었는데 이는 질화 처리가 선행될 경우 Ga과 N의 표면 확산에 대한 활성화 에너지가 감소되기 때문인 것으로 생 각된다 일반적으로 GaN 에피택시 충의 결정성의 향상과 lateral 생장올 도모하기 위하여 성장 온도를 증가시키지만 본 실험에서는 낮은 성장 온도에서도 결정성의 향상 및 l later빼 성장을 촉진시킬 수 있었으며 이는 저온 성장법에 의한 고품위의 GaN 에피택시 충 성장에 대한 가능성올 제시하는 것이다.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.593-596
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• 2017

Sodium titanate nanosheets were prepared by a hydrothermal synthesis method under basic conditions. Ruthenium was introduced on the surface of sodium titanate nanosheets through an UV irradiation in the aqueous $RuCl_3$ solution. The crystal phase and morphology of synthesized samples were analyzed by X-ray diffraction, transmission electron microscopy and energy dispersive spectroscopy. In addition, the content of Ru was evaluated by inductively coupled plasma. It was proposed that a monomeric form of ruthenium was incorporated on the surface of sodium titanate. Ruthenium incorporated sodium titanates were applied to alcohol oxidation using molecular oxygen as an oxidant. The sample with 7% ruthenium showed a catalytic activity with a turnover frequency value of $2.1h^{-1}$ in oxidizing benzyl alcohol to benzaldehyde without any other byproducts at $105^{\circ}C$ and 1 atmosphere.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.190-194
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• 2002

In this study, the etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties were measured as the CF4 adds from 0 % to 30 % to the Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. Other parameters were fixed at a rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Au peaks are changed. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point and the etching products can be sputtered by Ar ion bombardment. We obtained the cleaned and steep profile.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.2 no.4
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• pp.231-238
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• 2004

The conditions are obtained for the decomposition of solid radioactive wastes, including ion exchange resin, zeolite, charcoal, and sludge from nuclear power plant. In the process of decomposing the radioactive wastes was used the microwave acid digestion method with mixed acid. The solution after acid digestion by the following method was colorless and transparent. Each solution was analyzed with ICP-AES and AAS and the recovery yield for 5 different elements added into the simulated radioactive wastes were over $94{\%}$. The elemental analysis of destructive low and medium level radioactive wastes by the proposed microwave acid digestion conditions concerning the chemical characteristics of each radioactive waste are expected to be useful basic data for development of optimal glass formulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.448-454
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• 2009

Hydrogen was produced from water plasma excited in high frequency (HF) inductively coupled tubular reactor. Mass spectrometry was used to monitor gas phase species at various process conditions, Water dissociation rate depend on the process parameters such as ICP power, $H_{2}O$ flow-rate and process pressure, Water dissociation percent in ICP reactor decrease with increase of chamber pressure, while increase with increase of ICP power and $H_{2}O$ flow rate. The effect of $CH_4$ gas addition to a water plasma on the hydrogen production has been studied in a HF ICP tubular reactor. The main roles of $CH_4$ additive gas in $H_{2}O$ plasma are to react with 0 radical for forming $CO_x$ and CHO and resulting additional $H_2$ production. Furthermore, $CH_4$ additives in $H_{2}O$ plasma is to suppress reverse-reaction by scavenging 0 radical. But, process optimization is needed because $CH_4$ addition has some negative effects such as cost increase and $CO_x$ emission.