• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 추계학술대회 논문요약집
• /
• pp.255-255
• /
• 2003

• 한국정밀공학회지
• /
• 제21권6호
• /
• pp.145-152
• /
• 2004

Depth-sensing indentation is wifely used for evaluation of mechanical properties of thin films. It is generally accepted that the most significant source of uncertainty in nanoindentation measurement is the geometry of the indenter tip. Therefore the successful application of the technique requires accurate calibration of the indenter tip geometry. The direct measurement of geometry of a Berkovich indenter was determined using a atomic force microscope. The indentation geometrical calibration of contact area was performed by analyzing the indenter tip profile. The equations of area functions were proposed for nanoscale thin films..

• 대한기계학회논문집A
• /
• 제27권6호
• /
• pp.849-856
• /
• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• 한국정밀공학회지
• /
• 제22권2호
• /
• pp.194-201
• /
• 2005

Nanoscale fabrication of silicon substrate in an aqueous solution based on the use of atomic force microscopy was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate easily by a simple scratching process (Tribo-Nanolithography, TNL), has been applied instead of conventional silicon cantilever for scanning. A slant nanostructure can be fabricated by a process in which a thin damaged layer rapidly forms in the substrate at the diamond tip-sample junction along scanning path of the tip and simultaneously the area uncovered with the damaged layer is being etched. This study demonstrates how the TNL parameters can affect the formation of damaged layer and the shape of 3-D structure, hence introducing a new process of AFM-based nanolithography in aqueous solution.