• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.942-947
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• 2001

Thickness dependence of orientation on piezoelectric and electrical properties was investigated by PZT (52/48) films by diol based sol-gel method. The thickness of each layer by spinning at one time was $0.2{\mu}m$ and crack-free films could be successfully deposited on 4 inches Pt/Ti/$SiO_2$/Si substrates by 0.5 mol solutions in the range from $0.2{\mu}m$ to $3.8{\mu}m$. Excellent P-E hysteresis curves were achieved, which were attributed to the well-densified PZT films and columnar grain without pores or any defects between interlayers. The (111) preferred orientation of films were shown in the range of thickness below $1{\mu}m$. As the thickness increased, the (111) preferred orientation disappeared from $1{\mu}m$ to $3{\mu}m$ region, and the orientation of films became random above $3{\mu}m$. Dielectric constants and longitudinal piezoelectric coefficient, $d_{33}$, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of $1{\mu}m$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.110-115
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• 2023

During the Hg₂Br₂ physical vapor transport process, with increasing the partial pressure of component B, P_B from 40 Torr to 200 Torr, a unicellular convective flow structures move from the crystal growth region to the center region in the vapor phase. The boundary layer flow is dominant for P_B = 40 Torr, and the core region flow is dominant for P_B = 200 Torr. The flow in the vapor phase shows a three-dimensional convective flow structure with a single cell (unicellular) for P_B = 40 Torr and 200 Torr, exhibits an asymmetrical flow with respect to the x, y central axis under the horizontally oriented configuration with an aspect ratio (length-to-width) of 3 and linear conducting walls. The critical temperature difference between the source and crystal region is about 30 K. The total molar flux of Hg₂Br₂ increases with the temperature difference until the total molar flux reaches the critical value. At the critical total molar flux, the total molar flux abruptly decreases.

• The Korean Journal of Archival Studies
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• no.79
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• pp.83-120
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• 2024

This paper covers the current status and problems of the archival ecosystem. Since the enactment of the Records Management Act, the archival ecosystem has grown rapidly, but in retrospect, the discipline of archival science has stagnated, records management practice is overly concentrated in the public sector, the records management infrastructure in the private sector is weak, and the industry is failing. In recent years, the archival community has continued to discuss these issues, but mostly in the context of public records management, especially in the field. In this article, we look at the archival community as a whole, including the problems of archival academia and universities, the professionalism and qualification system of archivists, the Records Management Act limited to the public domain, and the difficulties of the industry, and propose alternatives in terms of professionalism and localization.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.15-19
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• 1997

Single crystals of Co-doped quartz (blue quartz) were grown hydrothermally from the $Na_2CO_3$ solution. The size of as-grown crystal was $100{\times}50{\times}35mm^3$ and the growth rate was 0.55 mm/day under the growth condition of $5wt.\%\;Na_2CO_3$ mineralizer, growth temperature of $343^{\circ}C$ and temperature gradient of $22^{\circ}C$. Visible spectrum showed a typical absorption feature of the synthetic blue quartz near 545, 570 and 643 nm. The concentration of color of the as-grown blue quartz related not to the concentration of cobalt in raw material but to the growth temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.359-365
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• 1997

$K_2CoCl_4$, single crystals were grown by the Czochralski method in Ar atmosphere. The thermal hysteresis of the dielectric constant at $T_c$ was investigated. $K_2CoCl_4$ crystal shows ionic hopping mechanism due to $K^+$ ion and the activation energy is nearly 0.62 eV. Thermal expansions along a-, b-, and c-axis of $K_2CoCl_4$, were measured on heating and the thermal expansion coefficients in each phase were calculated. From the result of the optical absorption measurement, we interpreted the absorption peak as transition energy between the splitted energy levels of the Co ion in the crystal field and it showed the possibility of the application to the optical band filter between 800 nm and 1200 nm.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.133-138
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• 1996

Epitaxial cubic silicon carbide films have been deposited on carbonized Si(001) substrates using the single precursor 1, 3-disilabutane in the temperature range 900-$1000^{\circ}C$ under high vacuum conditions. The films grown were characterized by in situ RHEED, XPS, XRD, x-ray pole figure, SEM, and TEM. The results show that epitaxial cubic SiC films with smooth morphology and good crystallinity were formed in this temperature range. The single precursor 1, 3-disilabutane has been found suitable for the epitaxial growth of cubic SiC on Si(001) substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.157-161
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• 2005

Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5${\~}$5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the $E_l,\;E_1+{\Delta}_1$, and $E_2$ critical points. These energies were decreased with increasing thickness of CdTe thin films.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.4 s.97
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• pp.13-18
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• 1999

섬유강화금속적층재(Fiber Reinforced Metal Laminates. FRMLs)는 고강도금속과 섬유강화복합재료(Fiber Reinforced Composite Materials)를 적층한 새로운 종류의 하이브리드 재료이다. 국산 아라미드 섬유인 헤라크론(Heracron, 코오롱)과 국내 복합재료 제작기술(한국화이바)을 사용하여 섬유강화금속적층재를 제작하고, 이를 HERALL(Heracron Reinforced Aluminum Laminate)이라 명명하였다. HERALL(Heracron Reinforced Aluminum Laminate)의 피로균열성장특성 및 피로균열진전 방해기구를 ARALL(Aramid-fiber Reinforced Aluminum alloy Laminates) 및 Al 2024-T3과 비교해석하였다. HERALL과 ARALL은 균열진전을 저지하는 아라미드 섬유로 인해 뛰어난 피로균열성장특성 및 피로저항성을 보여주었다. 아라미드 섬유의 균열브리드징으로 인한 $K_{max}$의 감소량과 Al 2024-T3의 균열닫힘으로 인한 $K_{max}$의 증가량을 구할 수 있는 응력-COD법을 사용하여 실제로 균열성장에 영향을 준 유효응력확대계수범위를 측정하였다. 균열선단으로부터 균열을 가공하면서 COD 변화량을 측정하여 균열브리징 영역을 구하였다.

• ETRI Journal
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• v.13 no.4
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• pp.10-24
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• 1991

본 연구에서는 기상 성장법 (VPE : vapor phase epitaxy) 으로 성장된 $n^+(Si:2X10^18cm^-3)$/$n(Si:1x10^17cm^-3)$구조의 시편 위에 SiN 과 감광막 등 식각 선택비가 서로 다른 두 물질로 보호된 소스와 드레인 사이의 게이트 형성 영역을 건식식각과 습식식각방법으로 리세스 에칭을 하여 형성한 후, 게이트를 자기정렬하여 형성시킬 수 있는 이중 리세스공정 기술을 개발하였고, 이를 통하여 전력용 MESFET 소자를 제작하였다.게이트 형성부분의 wide recess 폭은 건식식각으로 SiN을 측면식각(lateral etch) 함으로써 조절하였는데, 이 방법을 사용하여 MESFET 소자의 임계전압을 조절할 수 있고, 동시에 소스-드레인 항복전압을 30V 까지 향상시킬 수 있었다. 소스-드레인 항복전압은 wide recess 폭이 증가함에 따라, 그리고 게이트 길이가 길어짐에 따라 증가하는 경향을 보여주었다. 이 방법으로 제작한 여러종류의 MESFET 중에서 게이트 길이가 $2\mum$이고 소스-게이트 간격이 $3 \mum$인 MESFET의 전기적 특성은 최대 트랜스컨덕턴스가 120 mS/mm, 게이트 전압이 0.8V 일 때 포화드레인전류가 170~190mA/mm로 나타났다. 제작된 MESFET이 ($NH_4$)$_2$$S_x$ 용액에 담금처리될때 , 공기중에 노출된 게이트-드레인 사이의 n-GaAs층의 표면이 유황으로 보호되어 공기노출에 의한 표면 재산화막의 형성이 억제되었기 때문으로 사료된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.442-447
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• 1998

Visible photoluminescence (PL) has been observed generally in the blue and green spectral region from anodically etched porous Ge as well as spark processed Ge. Porous Ge which is prepared by anodic etching without UV light illumination displays the PL peak max of 52 nm (2.38 eV), while porous Ge with UV light illumination exhibits PL peak blue shift to a 470 nm (2.63 eV). Spark processed Ge shows a PL peak max of 520 nm with shoulder peaks at 420 nm and 610nm. The values of energy shift as a function of decreasing temperature between 300 K and 20 K is 0.53 and $1.89\;meVK^{-1}$ for anodic etched Ge without UV illumination and with UV illumination, respectively. On the contrary, no continuous blue shift of PL peak as a function of decreasing temperature is observed for the green luminescing spark processed Ge. From the results of PL as a function of temperature the origin of blue and green luminescing anodically etched Ge as well as spark processed Ge is discussed.