• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.141-146
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• 1999

We measured and analyzed thermoluminescence spectra of $LaAlO_3$, single crystal by 3 dimensional data for temperature, wavelength and luminescence intensity. $LaAlO_3$, has used as the substrates of YBCO(superconductor) or semiconductors. We could determined the energy of recombination center, that is impossible through analysis of glow curve data. We could obtained the energy through analysis of the spectrum data at peak temperature by Franck-Condon model. The total glow curve was deconvoluted to three glow curves by curve fitting method. The activation energies were 0.54eV, 0.91eV and 1.02eV respectively. The energies of recombination centers were determined with 2.04eV and 2.75eV from the analysis of luminescence intensity data for wavelength.

• Progress in Medical Physics
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• v.5 no.2
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• pp.3-12
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• 1994

$\^$137/Cs gamma ray induced thermoluminescenc(TL) from Na$\^$+/ ion implanted Al$_2$O$_3$ and unimplanted Al$_2$O$_3$ and the TL from Na$\^$+/ ion implanted Al$_2$O$_3$ are measured over the temperature range of 340K～620K. The TL curve of Na$\^$+/ ion implanted Al$_2$O$_3$ induced by $\^$137/Cs gamma ray is split into iolated TL peak located at 415K, 452K, 508K, and 568K. Because that the concentration of trapped char he carries of $\^$137/Cs gamma ray induced Al$_2$O$_3$ implanted with Na$\^$+/ ion is larger than that of Na$\^$+/ ion only implanted Al$_2$O$_3$, and the trap concentration of Na$\^$+/ ion implanted Al$_2$O$_3$ is much than that of $\^$137/Cs gamma ray only irradiated Al$_2$O$_3$, the TL intensity of Na$\^$+/ ion implanted Al$_2$O$_3$ induced by $\^$137/Cs gamma ray is about 20 times and 5 times higher than that of Al$_2$O$_3$ only implanted with Na$\^$+/ ion and Al$_2$O$_3$ only irradiated with $\^$137/Cs gamma ray, respectively. In proportion as ion implantation does and energy are incresed, the number of generated defects and the rate of defect creation are incresed, respectively. Therefore the TL intensity of ion implanted Al$_2$O$_3$ is depend on ion dose and energy. Acccrding to increse of incident ion mass, the TL intensity of ion implanted Al$_2$O$_3$ is abruptly decresce. This result showes that the TL intensity of ion implanted Al$_2$O$_3$ is closely related to ion depth range as wll as rate of defect creatin. The TL intensity of ion implanted Al$_2$O$_3$ is found to be related with defects generated by ion implantation. Table Caption

• Progress in Medical Physics
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• v.5 no.2
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• pp.13-20
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• 1994

The thermoluminescence(TL) glow curves and the optical absorption of $Al_2O_3$ irradiated with ${\gamma}$-ray, electron, and $Li^{+}$ ion followed by electron irradiation have been investigated to determine the relation of TL peak to its defect type. The TL glow curve of $Al_2O_3$ irradiated with ${\gamma}$-ray shows TL peaks at 380 K, 415 K, and 475 K. The UV photobleached TL glow curve of $Al_2O_3$ irradiated with ${\gamma}$-ray shows that the 380 K and 475 K TL peaks completely disappear while the 415 K TL peak still exists. The electron beam induced TL glow curve of $Al_2O_3$ after $Li^{+}$ ion implantation shows that the TL peak at 440 K is enhanced by a factor of 2 over the TL intensity of unimplanted $Al_2O_3$ while the TL peak at 380 K evidently disappears The implanted $Li^{+}$ ions are assumed to form singly charged interstitial cations and then recombine with electron trapped in F centers to produce F+ centers. The 380 K and 475 K TL peaks are proposed to be associated with F center, while the 415 K and 440 K TL peak are connected with F$^{+}$ center.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• Progress in Medical Physics
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• v.6 no.2
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• pp.51-60
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• 1995

Lithium Fluoride (LiF; TLD-100) crystal chips are normally used as thermolu minescence dosimeters (abbreviated as NC-100) for estimating the absorbed dose to the skin of a patient or in a solid water phantom undergoing radiotherapy with megavoltage photon (6 and 15MV) beams. In general, investigation has revealed a reduction in the sensitivity of NC-100 chips after many runs through heating cycles. A TLD-100 chip laminated with gold plate (140${\mu}{\textrm}{m}$) on the upper surface layer of its face toward the photon beam (abbreviated as GC-100) has properties different from that of a NC-100 chip activated by incident photons and contaminant electrons with various lower energies coming from the gantry head and air. Activation of the valence band electrons of GC-100 chips by incident photons, positrons and electrons-which come from the gold plate by mainly pair production process and partly from Compton scattering-results in more enhanced signal intensity, higher response per monitor unit, as well as a good linearity with monitor units and independence of dose rate. Since the electron beams (6 and 15 MeV) do not have the probability of pair production process with gold plate, there is only a small difference (about a 3.3％ increase for 15 MeV) in the signal gaps in the TL readout for electron beams between GC- and NC-100 chips. The 3.3％ increase is entirely due to the buildup caused by the 140 m gold plate. The sensitivity of GC-100 chips is much more susceptible to high energy photon beams than electron one because of pair production. The interaction of high energy photon with a material of high atomic number, such as the good plate in this case, results in a considerably significant probability of pair production. The gold plate on the NC-100 chips acts as not only an intensifier of their signals but also acts as a filter of contaminant electrons in therapeutic high energy X-ray beams.