• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.10
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• pp.7071-7077
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• 2015

In recently, the demand of cover-glass is increased because smart phone, tablet pc, and electrical device has become widely used. The display of mobile device is enlarged, so it is necessary to have a high strength against the external force such as contact or falling. In fabrication process of cover-glass, a grinding process is very important process to obtain high strength of glass. Conventional grinding process using a grinding wheel is caused such as a scratch, chipping, notch, and micro-crack on a surface. In this paper, polishing system using a abrasive film was developed for a grinding of mobile cover-glass. To evaluate structural stability of the designed system, finite element model of the polishing system is generated, and multi-body dynamic analysis of abrasive film polishing machine is proposed. As a result of the analysis, stress and displacement analysis of abrasive film polishing system are performed, and using laser displacement sensor, structural stability of abrasive film polishing system is confirmed by measuring displacement.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.9-15
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• 2021

Miniaturization of semiconductor devices has recently faced a physical limitation. To overcome this, 3D packaging in which semiconductor devices are vertically stacked has been actively developed. 3D packaging requires three unit processes of TSV, wafer grinding, and bonding, and among these, copper bonding is becoming very important for high performance and fine-pitch in 3D packaging. In this study, the effects of Ti nanolayer on the antioxidation of copper surface and low-temperature Cu bonding was investigated. The diffusion rate of Ti into Cu is faster than Cu into Ti in the temperature ranging from room temperature to 200℃, which shows that the titanium nanolayer can be effective for low-temperature copper bonding. The 12nm-thick titanium layer was uniformly deposited on the copper surface, and the surface roughness (R_q) was lowered from 4.1 nm to 3.2 nm. Cu bonding using Ti nanolayer was carried out at 200℃ for 1 hour, and then annealing at the same temperature and time. The average shear strength measured after bonding was 13.2 MPa.