• Korean Journal of Materials Research
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• v.8 no.10
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• pp.884-889
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• 1998

Amorphous silicon films of large area have been crystallized by a line shape excimer laser beam of one dimensional scanning with a gaussian profile in the scanning direction. In order to characterize the crystalline phase transition of thickness variables in excimer laser annealing(ELA), angle wrapping method was used. And also to characterize the residual stresses of crystalline phase transition in the case of angle wrapped-crystalline silicon on corning 7059 glass, polarized raman spectroscopies were measured at various laser energy density and substrate temperature. The residual stress varies from $9.0{\times}10^9$ to $9.9{\times}10^9$, and from $9.9{\times}10^9$ to $1.2{\times}10^10$dyne/${cm}^2$ of the substrate temperature at room temperature and varies from $8.1{\times}10^9$ to $9.0{\times}10^9$, and from $9.0{\times}10^9$ to $9.9{\times}10^9$dyne/${cm}^2$ of the substrate temperature at $400^{\circ}C$ as a function of direction from surface to substrate. According to the direction from the surface in liquid phase to the interface and from the interface to near the substrate in solid phase of recrystallized Si thin film, respectively. Thus, the stress is increased from(Liquid phase to solid phase) with phase transition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.230-231
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• 2009

펄스 레이저 층착법 (이하 PLD)은 다성분계 산화물 박막 또는 다층구조의 박막 제작에 매우 유용한 기술이다. 본 실험에서는 KrF 엑시머 레이저를 이용하여 pt on Si 기판 위에 150nm 두께의 $Bi_{1.5}ZnNb_{1.5}O_7$(이하 BZN) 박막을 다양한 기판온도에서 제작하였다. XRD를 이용하여 BZN 박막의 구조적 특성을 분석하였고, 박막을 MIM 구조로 제작하여 유정적 특성을 측정하였다. 제조한 BZN 박막은 $500^{\circ}C$ 이상에서 결정질을, $500^{\circ}C$ 이하의 온도에서는 비정질 특성을 보였다. 유전 특성은 100 - 400$^{\circ}C$ 영역에서는 온도가 증가함에 따라 졸은 특성을 나타내었고, $500^{\circ}C$에서부터는 감소하였다. 증착 온도 $400^{\circ}C$에서 제작한 BZN 박막이 유전상수가 67.8, 유전 손실이 0.006으로 가장 줄은 유전특성을 나타내었다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.6
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• pp.30-35
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• 2003

In this paper, the transverse strain was measured using polarization maintaining fiber Bragg grating(PMFBG) sensor. PMFBG sensor was fabricated using phase mask and Excidmer laser. The reflected wavelength of PMFBG sensor had dual peaks due to intrinsic birefringence. To find the polarization axes, peak sensitivity was measured under compression test. The signal characteristics of PMFBG sensor were also examined in embedding condition. The embedded PMFBG sensor in epoxy block was loaded for the transverse strain measurement, The wavelength-swept fiber laser(WSFL) was used to construct the PMFBG sensor system. Experiments showed that the PMFBG sensor could successfully measure the transverse strain.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.10
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• pp.1311-1317
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• 2001

To investigate only the effects of the stratified mixture distribution on initial flame propagation and combustion characteristics, the instantaneous equivalence ratio in the spark plug gap and combustion pressure were measured simultaneously In a constant volume chamber, To induce the stratified propane-air mixture distribution near the spark plug, counter-flow typed mixture injection system was used under the constant mean equivalence ratio $\Phi$$\_$mean/= 1.0 The instantaneous equivalence ratio was measured by a single-shot Raman scattering with narrow-band KrF excimer laser. The measuring error was within the limit of $\pm$ 3.5% provided that the proposed method was applied to the measured Raman signals. Judging from mass fraction burned derived from the measured pressure, the optimum combustion characteristics were shown under the condition that the local equivalence ratio in the spark plug was near 1.28$\pm$0.04, and these characteristics were more remarkable at the initial stage of combustion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.79-82
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• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.12
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• pp.4044-4052
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• 1996

Planar images of OH and $O_{2}$ with tunable KrF excimer laser which has a) 0.5 $cm^{-1}$ / linewidth, b) 0.5 nm tuning range, c) 150 mJ pulse energy, and d) 20 ns pulse width are obtained to determine spatial distributions of OH and $O_{2}$ in premixed $C_{3}$H$_{8}$ /O$_{2}$ flame. The technique is based on planar laser induced pre-dissociative fluorescence(PLIPF) in which collisional quenching is almost avoided because of the fast pre-dissociation. Dispersed LIPF spectra of OH and $O_{2}$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and $O_{2}$, OH and $O_{2}$ are excited on the P$_{2}$(8) line of the $A^{2}$.SIGMA.$^{+}$(v'= 3)-X$^{2}$.PI.(v'||'||'&'||'||'quot;= 0) band and R(17) line of the Schumann-Runge band B$^{3}$.SIGMA.$_{u}$ $^{[-10]}$ (v'= 0)- X$^{3}$.SIGMA.$_{g}$ $^{[-10]}$ (v'||'||'&'||'||'quot;= 6), respectively. Dispersed OH and $O_{2}$ spectra show an excellent agreement with simulated spectrum and previous works done by other group respectively. It is confirmed that OH widely distributed around flame front area than $O_{2}$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.1
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• pp.35-40
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• 1997

A new method to form the gate oxide and recrystllize the polycrystalline silicon (poly-Si) active layer simultaneously is proposed and fabricated successfully. During te irradiation of excimer laser, the poly-Si film is recrystallized, while the oxygen ion impurities injected into the amorphous silicon(a-Si) film are activated by laser energy and react with silicon atoms to form SiO2. We investigated the characteristics of the sample fabricated by proposed method using AES, TEM, AFM. The electrical performance of oxide was verified by ramp up voltage method. Our experimental results show that a high quality oxide, a pol-Si film with fine grain, and a smooth and clean interface between oxide and poly-Si film have been successfully obtained by the proposed fabrication method. The interface roughness of oxide/poly-Si fabricated by new method is superior to film by conventional fabrication os that the proposed method may improve the performance of poly-Si TFTs.

• Proceedings of the KOSOMBE Conference
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• v.1994 no.05
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• pp.127-130
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• 1994

This study is focused on investigating the mechanical properties of the human cornea and its shape through the inverse nonlinear finite element approach using the clinical and experimental data. The results of the inverse approach were used to construct the finite element model of the photorefractive excimer laser surgery for the myopia patients. The results of the finite element model were compared with those of the current clinical experiences and showed good agreements. Finally this study came to the conclusion that the finite element method has potential of the application to the medicine.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.268-271
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• 1993

Discharge pumped high power excimer laser is a very useful light source of ultraviolet region. In this paper. the design and operation characteristics of UV pre-ionized discharge pumped XeCl laser are discussed. Maximum output power of 890mJ at the efficiency of 1.4% was achieved with 35kV charging voltage, 3.4atm of total pressure and 10pps of pulse repetition rate. Optimum HCl pressure is considered to be between 2.5 and 3.5torr.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.