• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.96-97
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• 2015

확산을 이용한 표면 개질법인 Thermo-Reactive Diffusion(TRD) 기술 기반 2단 표면처리를 통해 고경도의 Nb(C,N) 코팅층을 고탄소 베어링강인 JIS-SUJ2강에 형성시켰다. 2단 표면처리는 암모니아 가스 질화와 분말 확산 코팅법으로 구성된 2step 열처리이다. 본 연구에서는 가스질화 화합물층의 두께가 코팅층 성장 거동에 어떤 영향을 미치는지 알아보기 위해서 $550^{\circ}C$에서 3, 6시간 암모니아 가스 분위기에서 가스질화를 실시하고, $900^{\circ}C$에서 3시간 분말 확산법을 통해 표면 코팅층을 형성하였다. 생성된 코팅층의 형상과 두께 측정을 광학현미경(OM) 과 주자전자현미경(SEM)을 통해 한 결과, 가스 질화는 약 10uu와 16um, 최종 코팅층은 약 정도 생성이 되었음을 확인하였다. 코팅층의 성분 분석은, EDS, FE-EPMA, XPS 분석을 통해서 실시하였다. EDS와 FE-EPMA 원소 mapping을 통해 모재에 비해 높은 농도의 Nb, C 그리고 N이 코팅층 내부에 존재함을 확인하였다. XPS분석의 결합에너지 peak를 통해 NbC, NbN 그리고 Nb-oxide가 생성이 되었음을 분석하였다. 생성된 코팅층의 경도는 low mode에서 10회 측정한 후 평균값을 내었고, 각각 Hv이었다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.8A
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• pp.796-804
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• 2002

This paper presents a new algorithm of fingerprint image analysis and processing using directional filter bank(DFB). The directional components of ridge is very important in pre-processing steps of fingerprint image processing such as image enhancement by directional filtering followed by estimationg the directional image of ridge patterns. The DFB analyzes input image into directional subband images and synthesizes them to the perfectly reconstructed image. In this paper, a new fingerprint processing algorithm using the DFB is proposed. The algorithm decomposes the fingerprint image into directional subband images and performs directional map generation, foreground segmentation, singular points extraction and image enhancement based on local directional energy estimate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.112-113
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• 2006

A stoichiometric mixture for $Cdln_2Te_4$ single crystal was prepared from horizontal electric furnace. The $Cdln_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $Cdln_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $Cdln_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $Cdln_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.4750\;eV\;-\;(7.69{\times}\;10^{-3}\;eV)T^2/(T+2147)$.

• The Journal of Engineering Research
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• v.6 no.2
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• pp.109-117
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• 2004

In this paper, we propose an object contour tracking algorithm using snakes in stereo image sequences. The proposed technique is composed of two steps. In the first step, the candidate Snake points are determined from the motion information in 3-D disparity space. In the second step, the energy of Snake function is calculated to check whether the candidate Snake points converge to the edges of the interested objects. The energy of Snake function is calculated from the candidate Snake points using the disparity information obtained by patch matching. The performance of the proposed technique is evaluated by applying it to various sample images. Results prove that the proposed technique can track the edges of objects of interest in the stereo image sequences even in the cases of complicated background images or additive components.

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.566-576
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• 2005

This paper describes an ab Initio study on interface energies, misfit strain energies, and electron structures at coherent interfaces Fe(bcc structure)/MCs(NaCl structure M=Ti, Zr, Hf). The interface energies at relaxed interfaces Fe/TiC, Fe/ZrC and Fe/HfC were 0.263, 0.153 and $0.271 J/m^2$, respectively. It was understood that the dependence of interface energy on the type of carbide was closely related to changes of the binding energies between Fe, M and C atoms before and after formation of the interfaces Fe/MCs with the help of the DLP/NNBB (Discrete Lattice Plane/ Nearest Neighbour Broken Bond) model and data of the electron structures. The misfit strain energies in Fe/TiC, Fe/ZrC and Fe/HfC systems were 0.390, 1.692 and 1.408 eV per 16 atoms(Fe: 8 atoms and MC; 8 atoms). More misfit energy was generated as difference of lattice parameters between the bulk Fe and the bulk MCs increased.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.436-445
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• 1996

비정질 실리콘박막의 고상결정화 특성에 대한 비정질 박막의 증착방법, 수소화 정도, 표면결정 활성화 에너지 변화 및 열처리 환경 영향을 X선 회절, EDAX, Raman 분광 분석으로 조사하였다. 저온(58$0^{\circ}C$)열처리 corning 시료에서 기판 barium(Ba), aluminum(AI) 성분의 막내 확산 임계열처리시간 및 확산에 기인 한 불안정 결정화 특성을 관찰하였다. 화학기상증착 석영 수소화 시료에서 hard damage 기계적 활성화 효과로 얻어진 조대결정립 결정화 특성을 X선 회절의 (111) 배향 상대강도 변화로 관찰 할 수 있었으며, 이는 활성화 효과에 의한 고상 결정화 시 핵생성과 성장속도변화로 다결정 실리콘의 전기적물성 향상 가능성을 보여주었다. Soft damage, bare 활성화 처리 수소화막의 결정화는 비정질 상의 혼재, 박막 응력등의 저품위 입계특성 및 미세결정립 성장 특성으로 관찰되었으나, 활성화 전처리에 의한 저온 및 고온(875$^{\circ}C$)단시간(30분) 결정화는 확인 되었다. 스퍼터링 비수소화 막의 결정화는 상변태 상태의 Raman 결정피크로 분석 되었으며, 결정화 거동에 선행막의 스퍼터링 및 비수소화 영향은 활성화효과에 관계없이 불완전 저품위 결정특성으로 확인되었다. AFM 표면형상은 3차원 island 성막특성을 보여주었고 표면거칠기정도는 높은 것으로 관찰되었다.

• Proceedings of the Korea Water Resources Association Conference
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• 2016.05a
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• pp.175-179
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• 2016

수상 태양광 발전시설은 댐이나 호소, 저수지의 잉여공간인 수면역에 설치하여 수위 변동에 대응하고 육상 대비 발전효율이 높은 발전시스템이지만 수상 태양광 발전시설의 설치로 인하여 수질오염 및 수생태계 교란을 야기할 수 있다는 우려가 지속적으로 대두 되고 있다. 본 연구는 안성시에 위치한 금광저수지 내 수상회전식 태양광 발전시설의 모니터링을 통해 발전시설의 설치가 수질에 미치는 영향을 파악하고자 하였다. 본 연구에서는 수상회전식 태양광 발전시설로 인하여 차광이 되는 차광구역 6지점과 그 외 비차광구역 4지점을 선정하여 차광으로 인한 수질의 변화를 알아보고자 하였다. 연구 결과 수상회전식 태양광 발전시설의 설치로 인하여 수체의 차광 및 광에너지 저하로 인한 수질 및 조류 농도의 변화는 통계학적으로 유의할 정도(p<0.05)의 수준은 아닌 것으로 판명되었다.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.8
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• pp.24-30
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• 2019

This study investigated the heat dissipation characteristics of a heat-sensitive LED. The results of the empirical test showed that the best temperature intensification was found at 90 with 15-fins, and the heatsink installed perpendicular to the direction of the flow of air was directly connected to the air in the largest heat shield area, leading to the best cooling, and the number of fin also resulted increase in the heat discharge area, resulting in the largest cooling action with 15 fins. It was found that the rate of air flow changed in the range of 1.5m/s to 2.5m/s, but only by a deviation of about $2^{\circ}C$ to $3^{\circ}C$ from the current state of 15 fins at 2.5m/s, and the rate of air flow increased, but the performance of the heat release was not significantly increased. As a result wind speed with minimum air flow conditions of 1.5m/s can greatly contribute to the heat dissipation performance.