• Electrical & Electronic Materials
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• v.6 no.1
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• pp.8-13
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• 1993

본 연구에서는 단일 광 변조기를 양자교환과 자기정열 방식을 이용하여 X-cut NiNbO$_{3}$기판에 제작하였다. 여기에서 어닐링 처리 효과는 단일 광 변조기에서 도파로의 굴절율 변화 특성을 나타냈으며 특히 어닐링 처리 시간의 조절에 의해서 단일 광 도파로가 광범위하게 변화된다는 것을 알았다. 이것을 기초로하여 광 변조기는 어닐링 공정 및 자기 정열방식에 의한 최적화와 간단화를 제작 공정에 응용 할 수 있었다.

• Composites Research
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• v.37 no.3
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• pp.170-178
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• 2024

This study proposes a hybrid composite where a thin copper film (Cu film) is embedded in carbon fiber reinforced plastic (CFRP), and quantum annealing is applied to derive the combination of Cu film placement that maximizes the through-thickness thermal conductivity. The correlation between each ply of CFRP and the Cu film is analyzed through finite element analysis, and based on the results, a combination optimization problem is formulated. A formalization process is conducted to embed the defined problem into quantum annealing, resulting in the formulation of objective functions and constraints regarding the quantity of Cu films that can be inserted into each ply of CFRP. The formulated equations are programmed using Ocean SDK (Software Development Kit) and Leap to be embedded into D-Wave quantum annealer. Through the quantum annealing process, the optimal arrangement of Cu films that satisfies the maximum through-thickness thermal conductivity is determined. The resulting arrangements exhibit simpler patterns as the quantity of insertable Cu films decreases, while more intricate arrangements are observed as the quantity increases. The optimal combinations generated according to the quantity of Cu film placement illustrate the inherent thermal conductivity pathways in the thickness direction, indicating that the transverse placement freedom of the Cu film can significantly affect the results of through-thickness thermal conductivity.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.