• Electrical & Electronic Materials
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• v.25 no.1
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• pp.12-17
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• 2012

• Journal of the Korean Society for Precision Engineering
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• v.26 no.9
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• pp.58-63
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• 2009

Silicon carbide (SiC) has been used for many engineering applications because of their high strength at high temperatures and high resistances to chemical degradation. SiC is very useful especially for a glass lens mold whose components demanded to the machining with good surface finish and low surface damage. The performance and reliability of optical components are strongly influenced by the surface damage of SiC during grinding process. Therefore, the severe process condition optimization shall be necessary for the highly qualified SiC glass lens mold. Usually the major form of damage in grinding of SiC is a crack occurs at surface and subsurface. The energy introduced in the layers close to the surface leads to the formation of these cracks. The experimental studies have been carried out to get optimum conditions for grinding of silicon carbide. To get the required qualified surface finish in grinding of SiC, the selection of type of the wheel is also important. Grinding processes of sintered SiC work-pieces is carried out with varying wheel type, depth of cut and feed using diamond wheel. The machining result of the surface roughness and the number of flaws, have been analyzed by use of surface profilers and SEM.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.11a
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• pp.433-438
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• 2009

The main objective of this research effort is to develop the performance of C/SiC composites manufactured by LSI (Liquid Silicon Infiltration) method for solid and liquid rocket propulsion system and ensure the performance analysis technique. The high performance and reliability of C/SiC composite are proved for solid and liquid rocket propulsion system. And the performance analysis technique related to mathematical ablation model is originated.

• Korean Chemical Engineering Research
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• v.62 no.3
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• pp.262-268
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• 2024

In this study, the MXene/Si composite was prepared by electrostacic assembly with 2-dimensional structured titanium carbide (MXene) and nano silicon for anode material of high-performance lithium-ion battery. Ti₃C₂T_x MXene was synthesized by etching the Ti₃AlC₂ MAX with LiF/HCl, and the surface of nano silicon was charged to positively using CTAB (Cetyltrimethylammonium bromide). The MXene/Si anode composite was successfully manufactured by simple mixing process of synthesized MXene and charged silicon. The physical and electrochemical properties of prepared composite were investigated with MXene-silicon composition ratio, and the surface of electrode after cycles was analyzed to evaluate stability of the electrode. The MXene/Si composites demonstrated high initial discharge capacities of 1962.9, 2395.2 and 2504.3 mAh/g as the silicon composition ratio increased to 2, 3 and 4 compared to MXene, respectively. MXene/Si-4, which is MXene and silicon ratio with 1 : 4, exhibited 1387.5 mAh/g of reversible capacity, 74.5% of capacity retention at 100 cycles and high capacity of 700.5 mAh/g at high rate of 4.0 C. As the results, the MXene/Si composite prepared by electrostatic-assenbly could be applied to anode materials for high-performance LIBs.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.163-166
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• 2009

다중접합 초 고효율 태양전지 제조를 위해 SiC 매트릭스를 이용한 실리콘 양자점 초격자 박막을 제조하고 특성을 분석하였다. $SiC/Si_{1-x}C_x$(x ~ 0.31)로 실리콘 양자점 초격자 박막을 Si과 C target을 이용한 co-sputtering법으로 초격자 박막을 제조하고, $1000^{\circ}C$에서 20분간 열처리를 하였다. high resolution transmission electron microscopy 사진으로 약1~7nm 크기인 양자점 생성과 분포 밀도를 확인할 수 있었으며, grazing incident X-ray diffraction (GIXRD)를 통해서 Si(111)과 $\beta$-SiC(111)이 생성되었음을 알 수 있었다. Auger electron spectroscopy (AES)측정에서 stoichiometric SiC층과 Si-rich SiC층의 Si 원자농도 (56%, 69%)와 C 원자 농도 (44%, 31%)를 알 수 있었으며, Fourier transform infra-red spectroscopy (FTIR)측정에서 SiC 픽의 위치가 767에서 $800cm^{-1}$으로 이동하는 것을 알 수 있었다.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.4
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• pp.240-246
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• 2013

$SF_6$ is the most important greenhouse gas with the highest GWP (global warming potential). The $SF_6$ decomposition study was performed with silicon carbide with aluminium oxide by microwave irradiation. DRE (Decomposition and Removal Efficiencie) of $SF_6$ were evaluated by GC-TCD unit using 3,000 ppm $SF_6$ gas. DRE of $SF_6$ was increased by $Al_2O_3$ contents to 10~30 wt%, otherwise $Al_2O_3$ content of 40~50 wt% was decreased. DRE of $SF_6$ up to 99.99% have been achieved in SiC-$Al_2O_3$ (20 wt%) and SiC-$Al_2O_3$ (30 wt%) above $900^{\circ}C$. Also, the DRE of SiC-$Al_2O_3$ (30 wt%) at $700^{\circ}C$ showed 96.72%. In addition to consideration microwave input energy and $Al_2O_3$ content, SiC-$Al_2O_3$ (30 wt%) can be suggested the best material to control $SF_6$. The results of this study suggest it is important to control content of $Al_2O_3$ in SiC for decomposition of $SF_6$ with microwave energy.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.100.1-100.1
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• 2010

고효율 실리콘 양자점 태양전지를 제작하기 위해 Si과 C target을 co-sputtering 방식으로 제조한 SiC matrix를 열처리하여 박막 내에 Si nanocrystal들을 생성하였다. Si nanocrystal의 특성은 다양한 요인에 영향을 받는 데 barrier 물질인 SiC matrix가 가장 큰 영향을 준다. SiC는 900도 이상에서 열처리하는 동안 Si과 C과 SiC으로 재배열 혹은 재결합하는 데 이 때 가장 작은 carbon이 빠르게 diffusion하는 현상에 의해 Si nanocrystal의 성장과 특성에 영향을 주게 된다. 이 현상을 연구하기 위해 stoichiometric SiC/Si-rich SiC/stoichiometric SiC의 3층 구조로 시료를 제작하여 이를 SIMS의 depth profiling을 통하여 열처리 전보다 열처리 후에 Si-rich SiC layer내에 carbon이 약 2~3%정도 증가한 것으로 carbon이 diffusion된 것을 확인하였다. 이 시료를 UV-VIS-NIR spectroscopy, Raman, GIXRD 등의 다양한 측정을 통하여 carbon diffusion에 의한 Si nanocrystal의 특성변화를 연구하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.398-398
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• 2009

텐덤 구조의 양자점 태양전지에서 양자점의 크기에 따라 에너지 밴드갭이 달라 넓은 대역의 태양광을 이용할 수 있다. 이러한 양자점의 크기는 증착 두께의 제어로 조절이 가능하다. Si과 C target을 이용한 RF Co-sputtering 법으로 각각 증착시간을 다르게 하여, SiC/$Si_{1-x}C_x$(x~0.20)인 실리콘 양자점 초격자 박막을 제조하고, $1000^{\circ}C$에서 20분간 질소 분위기에서 열처리를 하였다. Grazing incident X-ray diffraction(GIXRD)를 통해서 Si(111)과 $\beta$-SiC (111)이 생성되었음을 확인하였고, High resolution transmission electron microscopy(HRTEM) 사진으로 양자점의 크기와 분포 밀도를 확인할 수 있었다. Photoluminescence(PL)에서 1.4, 1.5, 1.7, 1.9eV의 Peak이 확인되었다.

• Resources Recycling
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• v.22 no.2
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• pp.37-43
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• 2013

Unlike the conventional slurry type wire sawing, the diamond wire sawing method adopts diamond plated wire as sawing media instead of slurry consisted of both silicon carbide and oil. Wafering with diamond plated wire leaves solid element of the sludge mostly made up of silicon, and it is not difficult to recover 95% or more of silicon by a simple separation process of oil from the sludge. In this study, silicon was recovered from the sludge by drying process and organic and metal impurities were removed by sintering process. As result 3N grade silica was obtained successfully by thermal processing utilized the fact that the recovered silicon readily combines with oxygen due to fine particle size.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.199-200
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• 2010