• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.659-664
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• 2020

In this paper, we propose a silicon-based electro-optic (EO) modulator which can modulate a sign of a topological charge number l of |l|=1 orbital angular momentum (OAM) mode. The proposed EO modulator consists of position-dependent doped Si waveguide core and undoped SiO2, cladding, which enables control of the effective index and propagation loss of two OAM constitutive eigenmodes. The modulator functions as OAM mode maintaining waveguide at -0.33V and as topological charge sign inverter at 10V. The output OAM mode purity is calculated through electric field distribution, showing high purity of |l|>0.92 in both cases.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1923-1924
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• 2008

본 논문에서는 실리콘 기반에 집적화 가능한 새로운 구조의 K-band 4포트 직접변환 수신기 구조를 제안하며, 복조기를 측정하기 위한 K-band 변조 신호를 구현할 수 있는 변조기 모듈을 제작, 변조 신호와 복조기를 검증하였다. 제안된 수신 구조는 CMOS와 같은 실리콘 기반의 IC에서 집적화 할 수 있는 소형화된 새로운 방법이며, 회로를 검증하기 위하여 0.18um CMOS 공정을 이용 제작, 구조의 가능성을 검증하였다. 또한 비교적 낮은 변조 신호를 이용하여 K-band 대역 이상의 변조 신호를 만들 수 있는 방법을 제안, 제작 측정하였다.

• Electronics and Telecommunications Trends
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• v.37 no.3
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• pp.11-22
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• 2022

The development and application of silicon photonics technology to terabit optical transmission are expected in the future. Silicon photonics technology is recognized as the only technology focusing on increasing the bandwidth of data center switches. High-density integration-based small optical subassemblies, optical engines, and optical transceivers are converged with the silicon photonics technology to accelerate a revolution in optical interfaces.

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.9-9
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• 1996

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.25-34
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• 2005

In this paper, we analyzed and measured the electrical crosstalk characteristics of a triplex transceiver module for ethernet Passive optical networks(EPONS). And we improved the electrical crosstalk levels using Dummy ground lines with signal lines. The triplex transceiver module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and a analog photodetector as a community antenna television signal receiver. And there are integrated on silicon substrate. The digital receiver and analog receiver sensitivity have to meet -24 dBm at $BER=10^{-l2}$ and -7.7 dBm at 44 dB SNR. And the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the Dummy ground line with $100\;{\mu}m$ space from signal lines and separates 4 mm among devices respectively, is satisfied the electrical crosstalk level compared to simple structure. This proposed structure can be easily implemented with design convenience and greatly reduced the silicon substrate size about $50\%$.

• Progress in Medical Physics
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• v.19 no.4
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• pp.219-226
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• 2008

In this study, we have conducted characterization of imaging performance for a flat panel digital X-ray detector using amorphous Selenium and a-Si TFT which was developed by the authors. The procedures for characterization were in concordance with internationally recommended standards such as IEC (international electrotechnical commission). The measures used for imaging performance characterization include response characteristic, modulation transfer function (MTF), detective quantum efficiency (DQE), noise power spectrum (NPS), and quantum limited performance. The measured DQEs at lowest and highest spatial frequencies were 40% and 25% respectively, which was superior to that of commercial products by overseas vendor. The MTF values were significantly superior to that of CR and indirect type DRs. The quantum limited performance showed the detector was limited by quantum noise at the entrance exposure level below 0.023 mR, which is sufficiently low for general X-ray examination.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.85.2-85.2
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• 2018

금속 나노구조체에서의 localized surface plasmon resonance와 surface-enhanced Raman scattering 현상은 센서를 비롯한 다양한 응용분야를 가지고 있다. 나노구조체 array 형성을 위한 대표적인 top-down 방식인 e-beam lithography 공정은 제조비용이 매우 높고 대량생산 및 대면적화에도 한계가 있기에 polystyrene(PS) bead의 self-assembly를 이용한 nanosphere lithography와 같은 bottom-up 방식이 폭넓게 연구되고 있다. Closed-packing된 PS bead의 monolayer를 얻기 위해서는 기판의 친수성 처리가 필요한데, 기존의 많은 연구에서는 기판의 표면개질에 화학적 공정을 이용하고 있다. 하지만 이는 기판 선택의 자유도를 떨어뜨리는 원인이 된다. 금속이나 실리콘 기판에서는 산성 용액을 이용한 화학적 처리방법을 적용할 수 있지만 SU-8과 같은 감광액 및 폴리머 기판에서는 산에 대한 내구성이 떨어져 화학적 공정의 도입이 불가능 하기 때문이다. 본 연구에서는 이러한 한계점을 극복하기 위해 $UV-O_3$ 공정으로 친수성 처리된 다양한 기판에서 spin coating을 통한 PS monolayer를 제조하였는데, UV 램프의 에너지 조절을 통해 기판에 붙어있는 유기물들을 효과적으로 제거할 수 있었고 $O_3$ 생성 및 분해 과정에서 기판 표면에 친수성 화학 작용기를 생성시킬 수 있었다. 제조된 PS layer를 mask로 사용하여 Ag, Al, Au 등 다양한 나노구조체 array를 형성하여 array 주기에 따른 플라즈몬 공명 특성을 분석하였다. 레이저 조사로 나노구조체의 형상을 변화시킴으로써 동일한 물질과 주기를 가진 array에서도 플라즈몬 특성의 변조가 가능함을 확인하였는데, 이는 금속 나노구조체의 응용측면에서 매우 고무적인 발견이다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.119-125
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• 1990

This paper describes fiber optic voltage sensor using EOM-BSO (Electro-Optic Modulator-Bismuth Silicon Oxcide). Transceiver has an electical/optical converter and an optical/electrical converter which consist of light emitting diode, PIN-PD, and electronic circuits. Multimode fiber cable of $100/140{\mu}m$ core/clad diameter is used for connecting the transceiver to fiber cable and fiber optic voltage sensor. Before our experiments, by applying the Maxwell equations and wave equations, We derive matrix equation on wave propagation in the BSO single crystal. And also we derive optimal equation on intensity modulation arising through an analyzer. According to experi-mental results, fiber optic voltage sensor has maximum $2.5{\%}$ error within the applied AC voltage of 800V. As the applied voltage increases, saturation values of voltage sensor also increase. This phenomenon is caused by optical rotatory power of BSO single crystal. And temperature dependence of sensitivity for fiber optical rotatory power of BSO single crystal. And temperature dependence of sensitivity for fiber optic voltage sensor in the temperature range from$-20^{\circ}C\to\60^{\circ}C$ are measured within ${\pm}0.6{\%}$. And frequency characteristics of the voltage sensor has good frequency characteristics from DC to 100kHz.