• Title/Summary/Keyword: 실리콘 미세 가공

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The technical trend of micro-pressure sensors (마이크로 압력센서의 기술동향)

  • 정귀상
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.102-113
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    • 1995
  • 일반적으로 단결정 실리콘은 거의 모든 전자소자의 재료로서 널리 사용되고 있으며 제조공정기술 또한 상당한 수준에 도달하고 있다. 최근에는 실리콘 자체의 우수한 압저항효과, 기계적 특성 그리고 반도체 제조공정을 이용한 미세가공기술인 마이크로머시닝을 이용하는 반도체 압력센서에 대한 연구가 활발히 진행되고 있다. 기계식 압력센서에 비해서 전기적 변화를 이용하는 반도체 압력센서에서는 소형, 저가격, 고신뢰성, 고감도, 다기능, 고분해, 고성능 및 집적화 등의 우수한 특성을 지니고 있다. 본고에서는 이러한 특성을 가지는 반도체 압력센서중 특히, 압저항형과 용량형 압력센서의 구조와 원리, 그리고 연구.개발동향 및 향후 전망에 관해서 기술하였다.

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Frequency Weighted Reduced $H_{\infty}$ Controller Design for a Silicon Gyroscope (실리콘 자이로스코프를 위한 주파스 가중 모델 축소 $H_{\infty}$ 제어기 설계)

  • Song, Jin-Woo;Lee, Jang-Gyu;Kang, Tae-Sam;Kim, Hyung-Taek;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 2001.07d
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    • pp.2274-2276
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    • 2001
  • 본 논문에서는 미세 구조물 가공 기술(MEMS)로 제작된 실리콘 자이로스코프를 위한 폐루프 제어기를 주파수 가중 $H_{\infty}$ 제어 기법과 주파수 가중 모델 축소 기법을 이용하여 설계하였다. 실리콘 자이로스코프는 수 kHz 대의 공진 특성을 이용하여 각속도를 측정하는 센서로서, 공진 주파수 영역의 특성이 매우 중요하므로 주파수 영역을 고려하고 공정 오차를 감안한 주파수 가중 $H_{\infty}$ 제어기가 필요하다. 본 논문에서는 고차 강인 제어기의 회로적 구현과 ASIC화가 가능하도록 하기 위해, 주파수 가중 모델 축소 기법을 이용하여 공진 주파수 영역에서 성능을 유지하는 저차 제어기를 설계하였으며, 시뮬레이션을 통해 기존의 제어기 및 고차 제어기와 성능을 비교하였다.

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Fabrication of Micro-Vacuum Sensor using Surface-Macromachined Lateral-type Field Emitter Device (표면 미세 가공된 측면형 전계 방출 소자를 이용한 초소형 진공 센서의 제작)

  • Park, Heung-Woo;Ju, Byeong-Kwon;Lee, Yun-Hi;Park, Jung-Ho;Oh, Myung-Hwan
    • Journal of Sensor Science and Technology
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    • v.9 no.3
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    • pp.182-189
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    • 2000
  • A micro-vacuum sensor was fabricated for the measurement of the vacuum level in micro-space. The fact that the field emission current was dependent on the environmental vacuum level was employed as an operating principle. The fabricated lateral-type field emitter triode with a cathode, a gate and a anode separated by using the surface micromachining process showed the emission current variation in the range of $1.20{\sim}2.42\;{\mu}A$ for the vacuum range of $10^{-5}{\sim}10^{-8}\;Torr$.

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A HIGH-ASPECT-RADIO COME ACTUATOR USING UV-LIGA SURFACE MICROMACHINING AND (110) SILICON BULK MICORMACHINING (UV-LIGA 표면 미세 가공 기술과 (110) 실리콘 몸체 미세 가공 기술을 이용한 큰 종횡비의 빗모양 구동기 제작에 관한 연구)

  • Kim, Seong-Hyeok;Lee, Sang-Hun;Kim, Yong-Gwon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.2
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    • pp.132-139
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    • 2000
  • This paper reports a novel micromachining process based on UV-LIGA process and (110) silicon anisotropic etching for fabrication of a high-aspect-ratio comb actuator. The comb electrodes are fabricated by (110) SILICON comb structure considering the etch-rate-ratio between (110) and (111) planes and lateral etch rate of a beam-type structure. The fabricated structure was$ 400\mum \; thick\; and\; 18\mum$ wide comb electrodes separated by $7\mim$ so that the height-gap ratio was about 57. Also considering resonant frequency of the comb actuator and the frequency-matching between sensing and driving mode for gyroscope application, we designed the number, width, height and length of the spring structures. Electroplated gold springs on both sides of the seismic mass were $15\mum\; wide,\; 14\mum\; thick\; and \; 500\mum$ long. The fabricated comb actuator had resonant frequency ay 1430Hz, which was calculated to be 1441Hz. The proposed fabrication process can be applicable to the fabrication of a high-aspect-ratio comb actuator for a large displacement actuator and precision sensors. Moreover, this combined process enables to fabricate a more complex structure which cannot be fabricate only by surface or bulk micromachining.

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Fabrication of Single Crystal Silicon Micro-Tensile Test Specimens and Thin Film Aluminum Markers for Measuring Tensile Strain Using MEMS Processes (MEMS 공정을 이용한 단결정 실리콘 미세 인장시편과 미세 변형 측정용 알루미늄 Marker의 제조)

  • 박준식;전창성;박광범;윤대원;이형욱;이낙규;이상목;나경환;최현석
    • Transactions of Materials Processing
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    • v.13 no.3
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    • pp.285-289
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    • 2004
  • Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

The Effect to Drilling by The Chemical Reaction on The Surface (표면 화학 반응이 드릴 가공에 미치는 영향)

  • 이현우;최재영;정상철;박준민;정해도;최헌종;이석우
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.05a
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    • pp.976-979
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    • 2002
  • This research presents the new method to fabricate small features through applying chemical mechanical micro machining(C3M) for Al5052 and single crystal silicon. To improve machinability of ductile and brittle material, reacted layer was formed on the surface before micro-drilling process by chemical reaction with $HNO_3$(10wt%) and KOH(10wt%). And then workpieces were machined to compare conventional micro-drilling process with newly suggested one. To evaluate whether or not the machinability was improved by the effect of chemical condition, surface defects such as burr, chipping and crack generation were measured. Finally, it is confirmed that C3M is one of the feasible tools for micro machining with the aid of effect of the chemical reaction.

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Fabrication and Characterization of Silicon Devices for Flow Measurement (II) (흐름측정용 실리콘 소자의 제작 및 특성 평가 (II))

  • Ju, B.K.;Ko, C.G.;Kim, C.J.;Tchah, K.H.;Oh, M.H.
    • Journal of Sensor Science and Technology
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    • v.3 no.1
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    • pp.12-18
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    • 1994
  • In this study, we fabricated and characterized a calorimetric-type flow sensing element using a micromachined silicon substrate. The cooling and heating effects resulted from the gas flow were measured by two temperature sensors located at both sides of the heating resistor, and the insulator diaphragm was employed as a substrate in order to improve thermal isolation. The sensor generated $0{\sim}378.4mV$ output signal under 10V bridge-applied voltage when the nitrogen gas was passed on the sensor surface having a mass flow rate of $0{\sim}0.25grs/min$, and reached to the stable operating condition within 10 seconds.

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Design, Fabrication and Micromachining Error Evaluation for a Surface-Micromachined Polysilicon Capacitice Accelerometer (표면미세가공기술을 이용한 수평감지방식의 정전용량형 다결정 실리콘 가속도계의 설계, 제작 및 가공 오차 영향 분석)

  • Kim, Jong-Pal;Han, Gi-Ho;Jo, Yeong-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.3
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    • pp.529-536
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    • 2001
  • We investigate a surface-micromachined capacitive accelerometer with the grid-type electrodes surrounded by a perforated proof-mass frame. An electromechanical analysis of the microaccelerometer has been performed to obtain analytical formulae for natural frequency and output sensitivity response estimation. A set of prototype devices has been designed and fabricated based on a 4-mask surface-micromachining process. The resonant frequency of 5.8$\pm$0.17kHz and the detection sensitivity of 0.28$\pm$0.03mV/g have been measured from the fabricated devices. The parasitic capacitance of the detection circuit with a charge amplifier has been measured as 3.34$\pm$1.16pF. From the uncertainty analysis, we find that the major uncertainty in the natural frequency of the accelerometer comes from the micromachining error in the beam width patterning process. The major source of the sensitivity uncertainty includes uncertainty of the parasitic capacitance, the inter-electrode gap and the resonant frequency, contributing to the overall sensitivity uncertainty in the portions of 75%, 14% and 11%, respectively.

Design, Microfabricaiton and Testing of Laterally-Resonating Polysilicon Microactuators (수평공진형 다결정실리콘 미소액추에이터의 설계, 제작 및 시험)

  • Jo, Yeong-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.5
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    • pp.1363-1371
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    • 1996
  • This paper presents the design, fabrication, and testing of polysilicon electrostatic microactuators that resonate in the direction parallel to the silicon susbstrates. A set of six different designs has been developed using a theoretical model and design formulae developed for the mocroactuators. Microactuator prototypes are fabricated from a 2.1 $\mu{m}$-thick LPCVD polysilicon film, using a 4-mask surface-micromachining process. The prototypes are tested under a d.c. bias voltage of 45V with an a.c. drive voltage amplitude of 20 v.Measured resorant frequencies are in the ranges of 40-60 kHz, showing a good agreement to their theoretical estimates within error bounds of .$\pm$.5%. Important issues inthe design and microfabrication of the microactuators are discussed, together with potential applicaitons of the key technology involved.

Design and fabrication of a Micromechanical Switch Using Polysilicon Surface Micromachining (다결정실리콘 표면 미세가공 기술을 이용한 초소형 기계식 스위치의 설계 및 제작)

  • Chae, Gyeong-Su;Han, Seung-O;Ha, Jong-Min;Mun, Seong-Uk;Park, Jeong-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.9
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    • pp.546-551
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    • 2000
  • A micromechanical switch that can be used as a logic gate is described in this paper. This switch consists of fixed input electrodes an output electrode Vcc/GND electrodes and movable plates suspended by crab-leg flexures. for mechanical switching of an electrical signal a parallel plate actuator which comes in contact with output electrode was used. Provided that movable plates are connected to Vcc and a low input voltage(ground signal) is applied to the fixed input electrodes the movable plates are pulled by an electrostatic force between the fixed input electrodes and the movable plates. the proposed micromechanical switch was fabricated by surface micromachining technology with$2\mum$ -thick poly-Si and the measured threshold voltage for ON/OFF switching was 23.5V.

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