• Journal of the Korean Magnetics Society
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• v.21 no.1
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• pp.1-4
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• 2011

We have studied magnetic structure and magnetic anisotropy energy of cubic transition metal mono-oxide cluster FeO and MnO using OpenMX method based on density functional method. The calculation results show that the antiferromagnetic spin arrangement has the lowest energy for FeO and MnO due to the superexchange interactions. The magnetic anisotropy is only found for antiferromagnetically ordered FeO cluster, since occupied electron of 3d down-spin level induces the spin-orbit couplings with <111> directed angular momentum.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.275-275
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• 2010

나노선의 합성을 위해 필요한 씨드는 기상증착에 경우 값비싼 공정 비용이 요구되지만 액상의 경우 저렴하고 공정이 단순하며 단시간에 공정이 용의하고 대면적이 가능하다는 장점을 가지고 있다. 우리는 zinc acetate, ethylene glycol monoethylethe(C3H8O2), Monoethanolamine을 일정한 비율로 혼합하여 ZnO 나노와이어 합성에 필요한 액상씨드를 만든 후 이것을 기판위에 증착하기 위해 수차례에 걸쳐 스핀코팅을 하였다. 스핀코팅후 퍼니스와 핫플레이트를 이용하여 Soft bake, Hard bake 공정을 통해 각각 열처리 한후 XRD 를 통한 결정성과 방향성 그리고 AFM을 통한 표면거칠기를 관찰하였고 또한 수열합성법을 통하여 제작한 씨드를 기반으로 하는 ZnO 나노와이어를 합성하여 각각의 열처리 조건에 따른 나노와이어의 특성변화를 관찰하였고 향후 나노기반 소자의 적용가능성을 확인하였다.

• Investigative Magnetic Resonance Imaging
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• v.10 no.2
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• pp.70-80
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• 2006

Spin echo gradient moment nulling pulse sequences were designed and implemented on a clinical magnetic resonance imaging system. A new technique was introduced for flow compensation that minimized echo time and effectively suppresses unwanted echoes on the slice selection gradient axis in spin echo sequences. A unified gradient shape was used in all orders of flow compensation up to the third order. A dual-purpose gradient was applied for flow compensation and to reduce unwanted artifacts. The sequences were used to generate images of phantoms and/or human brains. This technique was especially good at reducing eddy currents and artifacts related to imperfection of the refocusing pulse. The developed sequences were found to have shorter echo times and better flow compensation in through-plane flow than those of the previous models that were used by other investigators.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.98-103
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• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.301-305
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• 1999

NiFe(60$\AA$)/Co(5$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were patterned into magnetoresistive random access memory (MRAM) cells by a conventional optical lithography process and their output and switching properties were characterized with respect to the cell size and geometry. When 1 mA of constant sense current was applied to the cells, a few or a few tens of mV of output voltage was measured within about 30 Oe of external magnetic field, which is an adequate output property for the commercializing of competitive MRAM devices. In order to resolve the problem of increase in the switching thresholds of magnetic layers with the downsizing of MRAM cells, a new approach using the controlled shape anisotropy was suggested and interpreted by a simple calculation of anisotropy energies of magnetic layers consisting of the cells. This concept gave a reduced switching threshold in NiFe(60$\AA$)/Co(5$\AA$) layer consisting of the patterned cells from about 15 Oe to 5 Oe and it was thought that this concept would be much helpful for the realization of competitive MRAM devices.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.60-64
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• 2007

Ba-Ferrite single crystals were prepared and characterized by X-ray, SEM and Mossbauer spectroscopy. The single crystal layers was cut in the c-axis and radiated to the surface by ${\gamma}-rays$ for Mossbauer spectroscopy. We found out that the spin states in Fe atoms were parallel to the ${\gamma}-rays$ direction. The temperature dependence of the hyperfine field is almost similar to that of powder samples. The crystal structure is a Magnetoplumbite without any other phases and the lattice parameters are found out with $a_0=5.892{\AA},\;b_0=5.892{\AA},\;c_0=23.198{\AA}$. $M\"{o}ssbauer$ spectrum in single crystal have 5 sets off absorption lines in each Fe site when the ${\gamma}-rays$ have the same radiation direction with the c-axis in the crystal, which mean that the whole crystal bulk formed only one crystal and same spin direction. The hysteresis curve shows the saturation moment and coercive force of 70.71 emu/g and 320 Oe respectively.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.180-184
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• 2008

The relation of ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration has been investigated for variously angles of unidirectional deposition magnetic field of FeMn layer in Corning glas/Ta(5 nm)/NiFe(7 nm)/FeMn(25 nm)/ Ta(5 nm) multilayer prepared by ion beam deposition. Three unidirectional deposition angles of FeMn layer are $0^{\circ},\;45^{\circ}$, and $90^{\circ}$, respectively. The exchange bias field ($H_{ex}$) obtained from the measuring easy axis MR loop was decreased to 40 Oe in deposition angle of $45^{\circ}$, and to 0 Oe in the angle of $90^{\circ}$. One other side hand, $H_{ex}$ obtained from the measuring hard axis MR loop was increased to 35 Oe in deposition angle of $45^{\circ}$, and to 79 Oe in the angle of $90^{\circ}$. Although the difference of uniderectional axis between ferromagnet NiFe and antiferromagnet FeMn was 90o, the strong antiferromagnetic dipole moment of FeMn caused to rotate the weak ferromagnetic dipole moment of NiFe in the interface. This result implies that one of origins for exchange coupling mechanism depends on the effect of magnetic field angle during deposition of antiferromgnet FeMn layer.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.35-40
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• 2010

The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.277-277
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• 2007

$(Bi,La)_4Ti_3O_{12}$ (BLT) 물질은 결정 방향에 따른 강한 이방성의 강유전 특성을 나타낸다. 따라서 BLT 박막을 이용하여 FeRAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 현재까지 연구된 BLT 박막의 방향성 조절 결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 중착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성 (random orientation)을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법 (sputtering deposition method), PLD법 (pulsed laser deposition method) 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요 없게 된다. PVD 증착법의 적용을 위해서는 타겟 (target)의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표 되지 않고 있다. 본 실험에서는 $Bi_2O_3$, $TiO_2$ and $La_2O_3$ 분말을 이용하여 최적의 조성을 구하기 위하여 Bi양을 변화시키며 타겟을 제조 하였다. 혼합된 분말을 하소 후 pallet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 표면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. Bi양이 3.28몰 첨가된 조성에서 최대의 잔류분극 (2Pr) 값을 얻었고, 이때의 값은 약 $18{\mu}C/cm^2$ 정도였다. 최적화된 조성 ($Bi_{3.28}La_{0.75}Ti_3O_{12}$)으로 BLT 타겟을 제조하여 PLD법으로 박막을 제조하였다. 박막 제조 시 압력은 $1{\times}10^{-1}\;{\sim}\;1{\times}10^{-4}\;Torr$ 범위에서 변화시켰다. $1{\times}10^{-1}\;Torr$ 압력을 제외하고는 모든 압력에서 BLT 박막이 증착되었다. 중착된 박막을 $650\;{\sim}\;800^{\circ}C$에서 30분간 열처리를 실시하고 전기적 특성을 평가한 결과, $1{\times}10^{-2}\;Torr$에서 증착한 박막에서 양호한 P-V (polarization-voltage) 이력곡선을 얻을 수 있었고, 이때의 잔류분극 (2Pr) 값은 약 $6\;{\mu}C/cm^2$ 이었다. 주사전자현미경 (SEM)을 이용하여 BLT 박막 표면의 미세구조도 관찰하였는데, 스핀코팅 법으로 증착한 경우에 관찰되었던 조대화된 입자들은 관찰되지 않았고, 상당히 양호한 입자 크기 균일도를 나타내었다.

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.1-6
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• 2013

Spin-orbit coupling (SOC) effect is known to be the physical origin for various exotic magnetic phenomena in the low-dimensional systems. Recently, SOC also draws lots of attention in the study on magnetically doped thermoelectric alloys to determine their properties as the thermoelectric application as well as the topological insulator via the exact electronic structures determination near the Fermi level. In this research, aiming to investigate the spin-orbit coupling effect on the structural properties such as the lattice constants and the bulk modulus of the most widely investigated thermoelectric host material, $Bi_2Te_3$, we carried out the first-principles electronic structure calculation using the all-electron FLAPW (full-potential linearized augmented plane-wave) method. Employing both the local density approximation (LDA) and the generalized gradient approximation (GGA), the structural optimization is achieved by varying the in-plane lattice constant fixing the perpendicular lattice constant and vice versa, to find that the SOC effect increases the equilibrium lattices slightly in both directions while it markedly reduces the bulk modulus value implying the strong orientational dependence, which are attributed to the material's intrinsic structural anisotropy.