• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.198-203
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• 2011

The electronic structure of ferrimagnetic spinel oxide of $FeV_2O_4$ has been investigated by employing soft x-ray absorption spectroscopy (XAS) and soft x-ray magnetic circular dichroism (XMCD). The Fe 2p and V 2p XAS spectra show that the valence states of Fe and V ions are ${\sim}Fe^{2.3+}$ mixed-valent states and ${\sim}V^{3+}$ states, respectively. In Fe 2p XMCD spectra, finite XMCD signals are observed for divalent $Fe^{2+}$ states only, but not for $Fe^{3+}$ states. This finding indicates that the magnetic moments of $Fe^{2+}$ ions are ordered ferromagnetically but that those of $Fe^{3+}$ ions are cancelled, implying that $Fe^{2+}$ ions play an important role in determining magnetic properties of $FeV_2O_4$.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.33-33
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• 2012

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.36-37
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• 2005

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.94-98
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• 2014

$LiCoO_2$ thin film has received diverse attention as cathodes material of thin-film micro-batteries. In this study, $LiCoO_2$ thin films were synthesized on Au substrates by sol-gel spin coating method and an annealing process. Their structures were studied using X-ray diffraction and Raman Spectroscopy. The particle morphologies of these thin films were observed by Scaning electron microscope. From the results of X-ray diffractometry and Raman Spectroscopy analyses, it was found that as-grown films had the structure of spinel (LT-$LiCoO_2$) and layered-Rock-salt (HT-$LiCoO_2$) at $550^{\circ}C$ and $750^{\circ}C$ respectively. The annealed films at $650^{\circ}C$ were presumed to be the mixed state of these two types. Throlugh the scanning electron microscope, It was estimated that the particle size in as-grown films at $750^{\circ}C$, were larger crystilline particle than in those at the other lower temperature and well distributed in the film.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.657-662
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• 1999

Mn-Ni oxide thin films for NTC thermistor application were sputtered on alumina substrates at $320^{\circ}C$ Effects of various oxygen partial pressures and annealing temperatures on the microstructure, crystal phase, resistivity and B constant were investigated. In general, microstructure of the films deposited was columnar grain structure. After annealing at $700^{\circ}C$, the microstructure was begun to transform to equiaxed grain structure. Most of the phases were mixture of cubic spinel and $Mn_2$$O_3$. As the oxygen concentration increased, the resistivity and B constant were greatly decreased, and these values become low and stable after annealing between $600^{\circ}C$ and $700^{\circ}C$.

• Economic and Environmental Geology
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• v.39 no.2 s.177
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• pp.173-180
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• 2006

The synthesis of polyphase waste form, which is an immobilization matrix fur the high level radioactive wastes, was performed with the mixed composition of garnet and spinel $(Gd_3Fe_5O_{12}+(Ni_xMn_{1-x})(Fe_yCr_{1-y})_2O_4)$ in the range of 1200 to $1400^{\circ}C$. The phases synthesized from all stoichiometric compositions were garnet, perovskite, and spinel. Especially, garnet was synthesized only in the composition of the highest content of Fe(y=0.9), whereas it was not synthesized in other compositions. This result indicated that the content of Fe was closely related to the formation of garnet. The composition of garnet revealed that the content of Gd was exceeded and that of Fe was depleted. Preferential distribution of elements in the phases can be attributed to the nonstoichiometric composition of garnet.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.65-70
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• 1991

The effect of inclusion particles on the microstructure development and electrical characteristics in the systems $ZnO-Bi_2O_3-CoO-Sb_2O_3\;and\;ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3 were investigated. The growth of ZnO grains, which was controlled by the spinel particles during sintering, decreased with increasing amount of spinel particles. Addition of $Cr_2O_3(0.5mol\%) increased the breakdown voltage without affecting the non-linear characteristics. The calculated barrier voltage of the $ZnO-Bi_2O_3-CoO-Sb_2O_3\;-and\;ZnO-Bi_2O_3-CoO-Sb_2O_3-Cr_2O_3$ systems were about 3.1V and 2.9V, respectively.

• The Journal of the Petrological Society of Korea
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• v.6 no.3
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• pp.226-243
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• 1997

The Odesan Gneiss Complex consists of mainly migmatitic gneiss and porphyroblastic gneiss with locally intercated quartzite, amphibolite, marble and leucocratic gneiss. At least two different regional metamorphisms are recognized in the study area. Metamorphic grade of the first metamorphism increases from the K-feldspar-muscovite zone(in which biotite-muscovite-plagioclase-quartz and garnet-biotite-muscovite-K-feldspar-plagioclase-quartz assemblages occur) in the east and southwestern part of the study area to the K-feldspar-garnet zone(in which garnet-biotite-K-feldspar-plagioclase-quartz, biotite-K-feldspar-plagioclase-quartz, garnet-biotite-K-feldspar-plagioclase-sillimanite-spinel-quartz assemblages occur) in the northwestern part. Kyanite is found as inclusions in plagioclase. The second metamorphism is characterised by occurrence of cordierite. The metamorphic grade of 2nd metamorphism decreases radically from the central-western part near Gaeinsan in which cordierite-garnet-sillimanite-biotite-muscovite-quartz, cordierite-garnet-spinel-sillimanite-biotite-muscovite-quartz assemblages representing the garnet-cordierite zone are observed. The garnet-cordierite zone is surrounded by the sillimanite-cordierite zone which shows cordierite-sillimanite-biotite-plagioclase, cordierite-muscovite-biotite-plagioclase and sillimanite-muscovite-biotite-plagioclase assemblages. The peak metamorphic P-T conditions of the first metamorphism calcuted from garnet-biotite-sillimanite-K-feldspar-plagioclase-spinel assemblage are 5.4~7.4 kb and $776-789^{\circ}C$. Real P-T condition of the first metamorphism might be higher than the calcuated P-T condition according to the study based on the phase equilibria. P-T conditions calcuated from the garnet-biotite in plagioclase are 12.5kb and $650^{\circ}C$ which indicate that the P-T path of the first metamorphism had passed a high pressure condition before the peak metamorphic temperature condition. The peak metamorphic P-T conditions of the second metamorphism calcuated from garnet-biotite-cordierite-spinel-quartz assemblage are $680~750^{\circ}C$ at pressures lower than 6 kb. In the Odesan Gneiss Complex, the first metamorphism of medium pressure and high temperature had occurred after the high pressure condition and fast uplift and then the second metamorphism of low pressure condition occurred after sedimentation of the Kuryong Group.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.52-56
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• 2001

The Breakdown electric field of ZnO semiconductor devices in voltage-current characteristics was increased by increasing of additive materials. The specimen that has not additive materials was not formed spinel structure. The critical voltage that has not spinel structure was 235[V]. When the additive materials has 0.5 and 2[mol%], the Breakdown electric field was 840 and 758[V] in each additive materials. The Breakdown electric field of varistors as a factor of voltage and current was increased by addition of oxide antimony. The varistors that has oxide antimony was linearly increased in low electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.43-46
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• 2001

The ZnO devices using semiconductor properties, to include $MnO_2$, $Y_2O_3$ and other material, was fabricated by $Sb_2O_3$ mol ratio from 1 to 4 [mol%]. The non-linearity factor was calculated by setting current to be $1[mA/cm^2]$ and $10[mA/cm^2]$. The spinel structure was fonned by $Sb_2O_3$ addition and it was depressed the ZnO grain formation. The grain growing was controlled by spinel structure that has improved the non-linearity factors. The breakdown voltage characteristics of semiconductor devices to increase with $Sb_2O_3$ was increased in voltage-current. The non-linearity value of ZnO semiconductor devices was 45 over.