• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.186-187
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. Thickness of SBN thin films was about 250[nm] in 70/30 of $Ar/O_2$ ratio. The thickness and deposition rate of SBN thin films were increased with increase of RF power. The capacitance of SBN thin films were increased with the increase of deposition temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.374-374
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• 2009

We have fabricated pure YBCO films and $BaZrO_3$ doped ones on $CeO_2$ buffered YSZ single crystal substrates using rf-sputtering method. In this work, pure YBCO and 2 vol% BZO doped YBCO target were used to investigate the flux pinning properties of BZO doped YBCO films compared to undoped ones. BZO nanodots within the superconducting materials was known to comprise the self-assembled columnar defects along the c-axis from the bottom of YBCO films up to the top surface, thus can be a very strong pinning sites in the applied magnetic field parallel to them. We will discuss the possibility of growing self-assembled columnar defects in the rf-sputtering method. It is speculated that BZO and YBCO phases can separate and BZO form nanodots surrounded by YBCO epitaxial layers and continuous phase separation and ordering between these two materials, which was well studied in Pulsed Laser Deposition method. For this purpose, some severe experimental conditions such as on-axis sputtering, shorter target-substrate distance, high rf-power, etc was adopted and their results will be presented.

• 한국전기전자재료학회논문지
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• 제11권11호
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• pp.984-989
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• 1998

The ($Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. All SCT thin films had (111) preferred orientation. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.92-95
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained at SCT15 thin film. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• 전기학회논문지
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• 제62권7호
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• pp.974-979
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• 2013

$TiO_2$ thin films are fabricated using R.F.sputtering method. $TiO_2$ thin films are coated on $Al_2O_3$ substrate printed IDE(interdigitated electrode). Impedance of thin films decreases according to increase relative humidity and it increases according to decrease measuring frequency. When substrate temperature is room temperature, impedance of thin films is from 45.68[MHz] to 37.76[MHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Whereas when substrate temperature is 100[$^{\circ}C$], impedance of thin films is from 692[kHz] to 539[kHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Impedance variation of thin films is bigger in low frequency regions than in high frequency regions. When substrate temperature is 100[$^{\circ}C$], impedance of thin films is lower than that of room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.58-61
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• 한국진공학회지
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• 제3권2호
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• pp.190-197
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• 1994

본 연구에서는 DC magnetron 스퍼터링법을 이용하여 고정밀, 고저항 저항체 박막으로 TaNx film을 제조하였을 때 형성될 수 있는 화합물 중 TaN0.1, TaN0.8과 TaN 박막의 Rs와 TCR특성을 평가하 고 film층의 우선방향성을 XRD를 이용하여 판명한 뒤 저항체의 Rs와 TCR에 미치는 영향을 조사하였 다. TaN0.1 박막이 35$\Omega$/$\square$의 면저항값과 안정된 TCR값을 나타내는 것을 알수 있었다. 두께50~200nm 의 TaN0.1과 Alumina 기판 사이에 정(+)의 TCR을 갖는 약 50nm의 Cr층을 증착하였을 때 Rs는 180$\Omega$/ $\square$ 과 TCR는 20ppm/$^{\circ}C$인 적층박막을 제조할 수 있었다. TaN0.1, TaN0.8 과 TaN 시편에서 화합물 형성 에 따른 Ta의 결합에너지를 ESCA를 이용하여 조사하였다. 이상의 연구결과로부터 TaN0.1 film이 TaNfilm 보다 고정밀, 고저항 박막 저항체 제조에 있어 우수한 전기저항 특성을 가지며 Cr 중간층 형성 으로 TCR이 $\pm$ppm/$^{\circ}C$정도로 안정된 고정밀 다층 저항체 박막을 형성할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.691-691
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• 2013

최근 휴대용 전자기기의 전원으로서 가장 널리 사용되고 있는 리튬 이차 전지는 우수한 에너지 밀도, 낮은 자가방전 속도로 인한 비 메모리 효과, 높은 작동전압으로 다양한 전자기기뿐만 아니라 미래형 자동차산업 및 항공산업 분야에서도 점차 사용 빈도가 증가하고 있다. 현재 리튬 이차 전지의 음극물질로 널리 사용되고 있는 흑연의 경우 초기 용량 감소가 크고 이론적인 최대용량(372 mAhg-1, LiC6)이 낮다는 문제가 있어 다양한 대체물질의 연구가 진행되고 있다. 그 중에서도 Si는 Li과 반응하여 Li4.4Si합금을 형성하며 높은 이론용량을 갖고 상용화된 전지의 전압(~3.7 V)보다 0.3 V정도 밖에 낮지 않기때문에 재료의 개발과 함께 바로 사용화 할 수 있다는 장점이 있다. 그러나 Si의 경우 금속 자체로 사용되는 경우 Li 이온이 삽입되어 Li4.4Si형성 시에 310%의 부피 팽창을 일으키게 되어 분쇄반응(pulverization)을 일으키고 충 방전에 따라 급격한 용량 감소를 야기한다. 본 연구에서는 이러한 문제점을 해결하기 위하여 RF 마그네트론 스퍼터링을 이용하여 보다 간단한 방법으로 Si층 사이에 수 나노의 Al층을 삽입하여 Si 입자의 부피 팽창으로부터 오는 응력을 상쇄시켜 높은 방전 용량 특성과 우수한 수명 특성을 동시에 구현하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1001-1004
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• 2001

The (Sr$_{l-x}$Ca$_{x}$)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased -with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increases.ses.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.87-90
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• 2006

In case of preparation of ITO thin film for using top electrode of Top-emitting Organic Light Emitting Diodes(TOLEDs), the ITO thin film should be prepared at room temperature and low oxygen gas flow condition in order to reduced the damage of organic layer due to the bombardment of highly energetic particles such as negative oxygen ions which accrued from the plasma. In this study, the ITO thin film with high optical transmittance and low resistivity prepared as a function of oxygen gas (0 ${\~}$ 0.8 sccm) and Ar gas was fixed at 20 sccm by the Facing Targets Sputtering (FTS) method. The electrical and optical properties of ITO thin films were measured by Hall effect measurement, UV/VIS spectrometer, respectively In the results, we obtained the ITO thin film with lowest resistivity($3{\times}10^{-4} {\Omega}{\cdot} cm$) at oxygen gas flow 0.2 sccm and optical transmittance over $80\%$ at oxygen gas flow over 0.2 sccm.