• Journal of Hydrogen and New Energy
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• v.23 no.5
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• pp.455-460
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• 2012

This work describes the hydriding chemical vapor synthesis (HCVS) of the $MgH_2$ in a hydrogen atmosphere and the product's hydriding-dehydridng properties. Mg powder was used as a starting material to synthesize $MgH_2$ and uniformly heated to a temperature of $600^{\circ}C$ for Mg vaporization. The effects of hydrogen pressure on the morphology and the composition of HCVS-$MgH_2$ were examined by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is clearly seen that after the HCVS process, the particle size of synthesized $MgH_2$ was drastically reduced to the submicron or micrometer-scale and these showed different shapes (needle-like nanofibers and angulated plate) depending on the hydrogen pressure. It was found that after the HCVS process, the $H_2$ desorption temperature of HCVS-$MgH_2$ decreased from 380 to $410^{\circ}C$, and the minimum hydrogen desorption tempreature of HCVS-$MgH_2$ powder with needle-like shape can be obtained. In addition, the enhanced hydrogen storage performance for needle-like $MgH_2$ was achieved during subsequent hydriding-dehydriding cycles.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.135-139
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• 2014

The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.