• Journal of Powder Materials
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• v.18 no.6
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• pp.502-509
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• 2011

In this study, a novel-processing route for fabricating microcellular zirconia ceramics has been developed. The proposed strategy for making the microcellula zirconia ceramics involved hollow microspheres as pore former. Compared to conventional dense microspheres pore former, well-defined pore structured zirconia ceramics were successfully fabricated. Effects of hollow microsphere content and sintering temperature on microstructure, porosity, pore distribution, and strength were investigated in the processing of microcellular zirconia ceramics.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2209-2210
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.577-578
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.217-218
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• 2006

In this study, In order to develop the low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT system ceramics were manufactured with the sintering temperature, and their microstructure and piezoelectric properties were investigated. At the composition ceramics sintered at $900^{\circ}C$, dielectric constant(${\varepsilone}_r$), electromechanical coupling factor($k_p$), piezoelectric constant($d_{33}$) and mechanical quality factor(Qm) showed the optimal value of 1095, 0.60, 363 and 1055, respectively, for multilayer piezoelectric actuator application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.212-213
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• 2006

BSCT(60/30/10) powder specimens were fabricated by sol-gel method and BSCT thick films were fabricated by screen-printing method. The coating and drying procedure was repeated 6 times. Then the structural properties as a function of the sintering temperature. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the crystalline phase. The BSCT sintered at $1430^{\circ}C$ showed the cubic perovskite structure. The prosity and thickness of the BSCT thick films was decreased with sintering temperature. The thickness of BSCT thick films at $1420^{\circ}C$ was approximately $40{\mu}m$.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.298-302
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• 2007

The electrical properties and its stability of Zn-Pr-Co-Cr-Tb-based varistors were investigated for different sintering temperatures. As the sintering temperatures increased, the varistor voltage decreased in the range of $705.2{\sim}299.1$ V/mm, the nonlinear coefficient decreased in the range of $42.4{\sim}31.7$, and the leakage current was in the range of $1.0{\sim}1.7\;{\mu}A$. The stability of electrical characteristics increased with the increase of sintering temperature. The varistors sintered at $1350^{\circ}C$ marked the high electrical stability, with $%\Delta$ $V_{1mA}=+0.1%,\;%\Delta{\alpha}=+3.2%$, and $%{\Delta}I_L=+117.6%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24\;h$.

• 전기의세계
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• v.31 no.6
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• pp.445-449
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• 1982

This Paper describes the influence of additive concentrations and sintering temperature on the surge protection performance in ZnO ceramic varistors. It is found from the experiments that the metal-oxide semiconductors based oi ZnO with an additive incorporation of 0.50% molx(Bi$\_$2/O$\_$3/+MnO+CoO+Cr$\_$2/O$\_$3/+2Sb$\_$2/O$\_$3/) and sintered at 1250.deg. C present excellent V-I characteristics in view of transient surge suppression. Gapless arrester element with aluminum electrodes shows also good reliability against impulse shock and marks a low voltage clamping ratio(V$\_$1KA/V$\_$1mA/<2.0) compared with the conventional SiC varistors.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.40-47
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• 1995

Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.835-839
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• 2004

The surge characteristics of ZnO varistors consisting of $ZnO-{Pr}_6{O}_11-CoO-{Cr}_2{O}_3-{Er}_2{O}_3$ceramics were investigated at various sintering temperatures. As sintering temperature raises, the varistor voltage was decreased from 341.2 to 223.1 V/mm, the nonlinear exponent was decreased from 64,9 to 44.1. On the other hand, the leakage current exhibited a minimum(0.64 $\mu$A) at 134$0^{\circ}C$, The clamping capability was slightly deteriorated with increasing sintering temperature. On the whole, the ZPCCE-based ZnO varistors exhibited good clamping voltage characteristics as exhibiting the clamping voltage ratio of 1.85 ∼ 1.92 approximately at surge current of 100 A.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.1-10
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• 1995

Effects of calcination temperature on microstructure and electric-magnetic properties of Mg-ferrite were investigated. As the calcination temperature increase, the green density and the sintered density increase due to the enhancement of densification of calcined powder. The grain size in the sintered ferrite increases with increasing the calcination temperatures from 800 to 100$0^{\circ}C$, but decreases from 1000 to 120$0^{\circ}C$. The resistivity decreases with increasing the calcination temperatures from 800 to 110$0^{\circ}C$, but increases from 1100 to 120$0^{\circ}C$ due to the microstructure which consists of small, uniform grian size and pores at grain boundaries. Magnetization increases slightly due to the increasement of the sintered density while Curie temperature is almost constant regardless of calcination temperatures.