• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.5
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• pp.47-53
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• 2007

The purpose of IEEE 802.16j is to extend coverage and to enhance throughput by using relay station additionally to conventional IEEE 802.16e . The cellular system experiences performance degradation at the cell edge due to pathloss, shadow and multipath fading. We can get advantage of spatial diversity gain by using relays more than two cooperatively in the IEEE 802.16j system. Cooperative relaying using space-time code provides better performance under multipath fading and has more robustness against the shadow fading than single relaying. In this paper, we investigate the performance of IEEE 802.16j using cooperative relaying by link level simulation. We also show that the cooperative relaying system achieves better performance than the conventional single relaying system. We apply realistic shadow model considering correlations between shadow fadings of different relaying paths. It is shown that the performance of the system depends highly on the spatial location of relay stations.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.12
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• pp.2727-2735
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• 1997

This paper describes a new fading compensation scheme for Wireless ATM(WATM) sytem using pilot symbols. We have carried out a simulation for bit error rate(BER) and cell loss probability(CLP) to analyze the performance of a new scheme. As the resutls, BER performance we improved by means of HEC only above 3 dB of $E_{b}/N_{0}$ in AWGN, but not at all in fading environment. However, by using a new fading compenstion scheme with HEC, BER performance degraded below to 1 dB of $E_{b}/N_{0}$ in AWGN, but BER and CLP performances in WATM system were improved remarkably, and meeted at CLP performance criterion for K=10 dB rician fading. Also, code rate will be high and harware size of codec will be small by using this new scheme with HEC OR FEC.

• Journal of Korea Multimedia Society
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• v.7 no.5
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• pp.713-720
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• 2004

In this paper we suggest error control scheme to improve CLR performance degradation on wireless ATM access networks which consist of access node and wireless channel. Based on the cell scale and hurst scale, traffic model of wireless ATM access network is analyzed. The CLR equation due to buffer overflow for wireless access node is derived for VBR traffic. the CLR equation due to random bit errors and burst errors for wireless channel is derived. Using the CLR equation for both access node and wireless channel, the CLR equation of wireless ATM access network is derived, and we evaluate the CLR performance on the wireless ATM access networks with conventional SR ARQ scheme and recommended error control scheme, that is, Type I Hybrid ARQ scheme. It is confirmed that CLR performance of the access networks with recommended error control schemes is superior to that of access networks with conventional error control scheme.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.7-11
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• 2010

The reduction of optical losses in mono-crystalline silicon solar cell by surface texturing is a critical step to improve the overall cell efficiency. In this study, we have changed the sub-micrometer structure on the micrometer pyramidal structure by 2-step texturing. The Ag particles were coated on the micrometer pyramid surface in $AgNO_3$ solution, and then the etching with hydrogen fluoride and hydrogen peroxide created even smaller nano-pyramids in these pyramids. As a result, we observed that the changes of size and thickness of nano structure on pyramidal surface were determined by $AgNO_3$ concentration and etching time. Using 2-step texturing, the surface of wafers is etched to resemble the rough surface of a lotus leaf. Lotus surface can reduce average reflectance from 10% to below 3%. This reflectance is less than conventional textured wafer including anti-reflection coating.

• Korean Chemical Engineering Research
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• v.57 no.6
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• pp.868-873
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• 2019

In this study, the evaluation of performance of AORFB using methyl viologen and TEMPOL as organic active materials in neutral supporting electrolyte (NaCl) with various membrane types was performed. Using methyl viologen and TEMPOL as active materials in neutral electrolyte solution, the cell voltage is 1.37V which is relatively high value for AORFB. Two types of membranes were examined for performance comparison. First, when using Nafion 117 membrane which is commercial cation exchange membrane, only the charge process occurred in the first cycle and the single cell couldn't work because of its high resistance. However, when using Fumasep anion exchange membrane (FAA-3-50) instead of Nafion 117 membrane, the result was obtained as the totally different charge-discharge graphs. When current density was $40mA{\cdot}cm^{-2}$ and cut off voltage range was from 0.55 V to 1.7 V, the charge efficiency (CE) was 97% and voltage efficiency (VE) was 78%. In addition, the discharge capacity was $1.44Ah{\cdot}L^{-1}$ which was 54% of theoretical capacity ($2.68Ah{\cdot}L^{-1}$) at $10^{th}$ cycle and the capacity loss rate was $0.0015Ah{\cdot}L^{-1}$ per cycle during 50 cycles. Through cyclic voltammetry test, it seems that this difference in the performance between the full cell using Nafion 117 membrane and Fumasep anion exchange membrane came from increasing resistance due to chemical reaction between membrane and active material, not the capacity loss due to cross-over of active material through membrane.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.1
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• pp.71-78
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• 2020

In the case of power generation using renewable energy, power production may not be smooth due to the influence of the weather. The energy storage system (ESS) is used to increase the efficiency of solar and wind power generation. ESS has been continuously fired due to a lack of battery protection systems, operation management, and control system, or careless installation, leading to very big casualties and economic losses. ESS stability and battery protection system operation management technology is indispensable. In this paper, we present a battery level calculation algorithm and a failure prediction algorithm for ESS optimization and stable operation. The proposed algorithm calculates the correct battery level by accumulating the current amount in real-time when the battery is charged and discharged, and calculates the battery failure by using the voltage imbalance between battery cells. The proposed algorithms can predict the exact battery level and failure required to operate the ESS optimally. Therefore, accurate status information on ESS battery can be measured and reliably monitored to prevent large accidents.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.264-264
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• 2016

최근에 charge trap flash (CTF) 기술은 절연막에 전하를 트랩과 디트랩 시킬 때 인접한 셀 간의 간섭현상을 최소화하여 오동작을 줄일 수 있으며 낸드 플래시 메모리 소자에 적용되고 있다. 낸드 플래시 메모리는 고집적화, 대용량화와 비휘발성 등의 장점으로 인해 핸드폰, USB, MP3와 컴퓨터 등에 이용되고 있다. 기존의 실리콘 기반의 플래시 메모리 소자는 좁은 밴드갭으로 인해 투명하지 않고 고온에서의 공정이 요구되는 문제점이 있다. 따라서, 이러한 문제점을 개선하기 위해 실리콘의 대체 물질로 산화물 반도체 기반의 플래시 메모리 소자들이 연구되고 있다. 산화물 반도체 기반의 플래시 메모리 소자는 넓은 밴드갭으로 인한 투명성을 가지고 있으며 저온에서 공정이 가능하여 투명하고 유연한 기판에 적용이 가능하다. 다양한 산화물 반도체 중에서 비정질 In-Ga-Zn-O (a-IGZO)는 비정질임에도 불구하고 우수한 전기적인 특성과 화학적 안정성을 갖기 때문에 많은 관심을 받고 있다. 플래시 메모리의 고집적화가 요구되면서 절연막에 high-k 물질을 atomic layer deposition (ALD) 방법으로 적용하고 있다. ALD 방법을 이용하면 우수한 계면 흡착력과 균일도를 가지는 박막을 정확한 두께로 형성할 수 있는 장점이 있다. 또한, high-k 물질을 절연막에 적용하면 높은 유전율로 인해 equivalent oxide thickness (EOT)를 줄일 수 있다. 특히, HfOx와 AlOx가 각각 trap layer와 blocking layer로 적용되면 program/erase 동작 속도를 증가시킬 수 있으며 넓은 밴드갭으로 인해 전하손실을 크게 줄일 수 있다. 따라서 본 연구에서는 ALD 방법으로 AlOx와 HfOx를 게이트 절연막으로 적용한 a-IGZO 기반의 thin-film transistor (TFT) 플래시 메모리 소자를 제작하여 메모리 특성을 평가하였다. 제작 방법으로는, p-Si 기판 위에 열성장을 통한 100 nm 두께의 SiO2를 형성한 뒤, 채널 형성을 위해 RF sputter를 이용하여 70 nm 두께의 a-IGZO를 증착하였다. 이후에 소스와 드레인 전극에는 150 nm 두께의 In-Sn-O (ITO)를 RF sputter를 이용하여 증착하였고, ALD 방법을 이용하여 tunnel layer에 AlOx 5 nm, trap layer에 HfOx 20 nm, blocking layer에 AlOx 30 nm를 증착하였다. 최종적으로, 상부 게이트 전극을 형성하기 위해 electron beam evaporator를 이용하여 platinum (Pt) 150 nm를 증착하였고, 계면 결함을 최소화하기 위해 퍼니스에서 질소 가스 분위기, $400^{\circ}C$, 30 분의 조건으로 열처리를 했다. 측정 결과, 103 번의 program/erase를 반복한 endurance와 104 초 동안의 retention 측정으로부터 큰 열화 없이 메모리 특성이 유지되는 것을 확인하였다. 결과적으로, high-k 물질과 산화물 반도체는 고성능과 고집적화가 요구되는 향후 플래시 메모리의 핵심적인 물질이 될 것으로 기대된다.

• The KIPS Transactions:PartC
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• v.11C no.1
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• pp.141-148
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• 2004

Recently, the demand of broadband communications such as high-speed internet, HDTV, 3D-HDTV and ATM backbone network has been increased drastically. For transmitting the broad-bandwidth data using wireless network, it is needed to use ka-band frequency. However, the use of this ka-band frequency is seriously affected to the received data performance by rain fading and atmospheric propagation loss at the Ka-band satellite communication link. So, we need adaptive MODEM to endure the degraded performance by channel environment. In this paper, we will present the structure and design of the 155Mbps adaptive Modem adaptively compensated against channel environment. In order to compensate the rain attenuation over the ka-band wireless channel link, the adaptive coding schemes with variable coding rates and the multiple modulation schemes such as trellis coded 8-PSK, QPSK, and BPSK are adopted. And the blind demodulation scheme is proposed to demodulate without Information of modulation mode at the multi-mode demodulator, and the fast phase ambiguity resolving scheme is proposed. The design and simulation results of adaptive Modem by SPW model are provided. This 155Mbps adaptive MODEM was designed and implemented by single ASIC chip with the $0.25\mu{m}$ CMOS standard cell technology and 950 thousand gates.