• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.102-109
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• 2000

It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.42 no.5
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• pp.31-40
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• 2005

In this study, we study measurement of wafer processing throughput and sequence simulation of single wafer type for wafer cleaning equipments that were used for etching, cleaning and polishing of wafer. Based on finite state machine, simulation model was built with identification of robot's status according to scheduling algorithm. Moreover, through performance of simulation as above, throughput per hour of cleaning equipment was measured. By the simulation method that are proposed in this paper, we could measure the wafer throughput per hour according to recipe and robot motion speed, and find optimal recipe and moving sequence of robot that maximize the throughput.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.113.2-113.2
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• 2011

동물성 오일을 이용한 바이오디젤 생산 반응 후 미반응된 메탄올과 염기촉매의 처리에 관한 연구로써 바이오디젤의 순도에 영향을 미친다. 메탄올과 염기촉매는 바이오디젤 생산 반응 후 상층인 메틸 에스터 층과 하층인 글리세롤 층에 각각 포함되어 있다. 1차적으로 각각의 층에서 메탄올을 증발하게 되며 메탄올 증발은 감압 증류 장치를 이용해 분리하게 된다. BD100을 기준으로 하여 메탄올의 함량은 0.2% 이하여야 하며 수분 함량은 0.05% 이하를 유지해야 한다. 메탄올 증발은 메탄올의 끓는 온도인 $65^{\circ}C$를 기준으로 하여 끓는점 보다 낮은 온도와 높은 온도에서 각각 증발을 실시하고 각각의 메탄올 증발 제거에 따른 FAME 함량에 미치는 영향에 대해 FAME 함량 분석을 통해 조사하였으며 메탄올 증발 후 증류수를 이용한 바이오디젤 내 잔류 촉매 및 자유 글리세린 세정 제거에 대해 조사하였다. 증류수 양과 증류수 온도 및 세정 시간에 따른 FAME 함량 변화를 알아보았으며 세정 후 증류수 증발에 따른 FAME 함량 변화에 대해서 분석을 실시하였다. 본 실험을 통해 동물성 오일을 이용한 바이오디젤 생산 후처리 공정인 메탄올 증발 및 세정, 수분 증발 공정의 최적 조건을 도출하고자 하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.11
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• pp.3269-3273
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• 2009

In this study, recycling methods of nano $TiO_2$-coated silica-bead were conducted in order to solve a deactivation problem of bead that had been invented for decomposition of pollutants in aqueous solution. Surface cleansing was selected as the recycling method for used beads. The surface cleansing was done with four different solutions such as distilled water, surfactant, acetone, and ethyl alcohol(ethanol). The recycling process consists of cleansing and calcination. After cleaning the used (deactivated) beads, calcination was done at $100^{\circ}C$, $200^{\circ}C$ and $300^{\circ}C$ for 30 minutes, respectively. This process was repeated three times. The activity of the recycled bead was measured by photo-degradation of methylene blue. The result shows that acetone cleansing and calcination at $100^{\circ}C$ for 30 minutes was the most efficient recycling method.

• Clean Technology
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• v.18 no.1
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• pp.43-50
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• 2012

Cleaning procedure of solar silicon wafer, following ingot sawing process in solar cell production is studied. Types of solar silicon wafer can be divided into monocrystalline or multicrystalline, and slurry sawn wafer or diamond sawn wafer according to the ingot growing methods and the sawing methods, respectively. Wafer surface and contaminants can vary with these methods. The characterisitics of contaminants and wafer surface are investigated for each cleaning substrate, and appropriate cleaning agents are developed. Physical properties and cleaning ability of the cleaning agents are evaluated in order to verify the application in the industry. The wafers cleaned with the cleaning agents do not show any residual contaminants when analyzed by XPS and regular patterns are formed after texturization. Furthermore, the cleaning agents are applied in the production industry, which shows superior cleaning results compared to the existing cleaning agents.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2007.10a
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• pp.179-180
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• 2007

• Clean Technology
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• v.19 no.3
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• pp.264-271
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• 2013

In this study, we optimized the removal condition of contaminants attached on the scrap surface to recycle the scrap generated from the Zr alloy tube manufacturing process back to the nuclear grade. The main contaminant is remnant of watersoluble cooling lubricant that is used in the pilgering manufacture during the tube production, and it is assumed to be compressed and carbonized on the surface of tube. Zirlo alloy tube of ${\phi}9.50mm$, which has high occurrence frequency of scrap, was selected as the object to be cleaned, and cleaning abilities of reagents were evaluated by measuring the characteristics of contaminants remained and by analyzing the surface of the tube after cleaning process. For evaluation of each cleaning agent, we selected two types of sodium hydroxide series and three types of potassium hydroxide series. Furthermore, to confirm dependence on tempe-rature and ultrasonic intensities, cleaning at the room temperature, $40^{\circ}C$, and $60^{\circ}C$ was conducted, and results showed that higher the cleaning temperature and higher the ultrasonic intensity, better the cleaning effect. As a result of the bare-eye inspection, while the use of sodium hydroxide provided satisfactory condition on the tube surface, the use of potassium hydroxide series provided satisfactory condition on the tube surface only when the ultrasonic intensity was over 120 W. In the cleaning effect analysis using the gravimetric method, cleaning efficiency of sodium hydroxide series was as high as 97.6% ($60^{\circ}C$, 120 W), but since the tube surface condition was poor after the use of potassium hydroxide, the gravimetric method was not appropriate. In the analytical result of surface contaminants on the tube surface, C, O, Ca, and Zr were detected, and mainly C and O dominated the proportion of contaminants. It was also found that the degree of cleaning on the tube affected the componential ratio of C and O; if the degree of cleaning is high, or if cleaning is well-conducted, the proportion of C is decreased, and the proportion of O is increased. Based on these results, optimal cleaning for application in the industry can be expected by categorizing cleaning process into three steps of Alkali cleaning, Rinsing, and Drying and by adjusting cleaning parameters in each step.

• Clean Technology
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• v.7 no.1
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• pp.13-25
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• 2001

With fast advancement of fine machineries and semiconductor industries in recent decades, the ultra-cleaning of organic chemicals, submicron particles from contaminated unit equipments and products such as silicon wafers becomes one of the most important steps for further advancement of such industries. To date, two kinds of ultra cleaning techniques are used; one is the wet-cleaning and the other is the dry cleaning. In case of wet cleaning, removal of organic contaminants and submicron particles is made by DIW with additives such as $H_2O_2$, $H_2SO_4$, HCl, $NH_4OH$ and HF, etc. While the wet cleaning method is most widely adopted for various occasions, it is inevitable to discharge significant amount of toxic waste waters in environment. Dry cleaning is an alternative method to mitigate environmental pollution of the wet cleaning with maintaining comparable degree of cleaning to the wet cleaning. Although there are various concept of dry cleaning have been devised, the dry cleaning with environmentally-benign solvent such as carbon dioxide proven to show high degree of cleaning from the contaminated porous surface as well as from the bare surface. Thus, special global attention has been placing on this technique since it has important advantages of simple process schemes and no environmentally concern, etc. Thus, this article critically reviews the state-of-the-art of the supercritical fluid drying with emphasis on the thermo-physical characteristics of the supercritical solvent, environmental gains compared to other dry cleaning methods, and the generic aspects of the basic design and processing engineering.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.45-50
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• 2009

By Laser Through-Silicon-Via process, debris and particles occur when you are forming. Therefore the research of TSV cleaning become important to remove those particles and debris. Both chemical cleaning method that uses a surfactant and physical cleaning method that uses a brush were studied with the via of $30{\mu}m$ diameter and $100{\mu}m$ depth on the 8 inch CMOS Image Sensor wafer. On the DI water and a surfactant in mixture ratio of 2:1, debris show $73{\mu}m^2$ per $0.054mm^2$. Cleaning is superior by lower mixture ratio of DI water and surfactant. In addition, It is less than 5% of debris distribution in the laser condition changed by Laser's frequency and its speed and cleaning had no effect. In the physical cleaning, there are no crack and damage when the system condition is set by $1000{\sim}3000rpm$ strip, $50{\sim}3000rpm$ rinsing, and $200{\sim}300rpm$ brushing Therefore, debris and particles can be removed by enforced chemical method and physical method.

• Proceedings of the Membrane Society of Korea Conference
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• 1999.04b
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• pp.13-24
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• 1999

폐수 재활용방법은 반도체업계나 도금, 기타 산업에서 주로 2차 세정수를 회수하여 저급수로 직접 사용하는 방법 또는 간단한 전처리를 거쳐 원수에 혼합하여 정수처리하는 RECLAM SYSTEM과 1차 세정폐수를 분리하여 전처리와 RO 등을 거쳐 용수로써 재활용하는 PROCESS RECYCLE SYSTEM, 종합 폐수처리 후 방류수를 재활용하는 방류수 재활용설비로 구분할 수 있다. 막분리를 사용한 폐수 재활용기술에서는 방류수 재활용(종합폐수 재활용)와 원폐수 재활용(성상변 분리 재활용)만을 다루고져 한다.