• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1421-1425
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• 1996

Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

• Journal of the Korean Ceramic Society
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• v.18 no.2
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• pp.99-104
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• 1981

Glass-ceramics possessed a number of characteristics which suggested their suggested their use for sealing to metals. The choice of particular glass-ceramics compositions for this application is governed by various factors, including workability of the glasses, thermal expansion characteristics and the matching of these to appropriate metals. Other properties, such as mechanical strength, determined the performance of glass-ceramics to metal seals. The purpose of the present study was to investigate direct sealing behaviour of copper to $Li_2O-ZnO-SiO_2$ system glass-ceramics. The design of the seal was a concentric seal which might contribute to the strong bond formation by providing compressive stress during thermal excursions. Tensile strengths of sealing layers were measured by Instron test machine. The layers were examined by electron probe microanalyzer. Crsystallization rate was increased with the amount of ZnO or $Li_2O$, and ZnO increased the sealing strength, but $Li_2O$ lowered it. Sealing mechanism was due to the formation of metal oxides, which acted as binder between copper and glass-ceramics. The nickle-plated copper seal with 10% $Li_2O$ and 30% ZnO was the most strong seal, and its sealing strength was more than 56kg/$\textrm{cm}^2$.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.55-64
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• 1995

Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.151-162
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• 1998

ZnO-BaO-$SiO_2-Al_2O_3$계 유리 및 결정화 유리 시편들을 제조하여 평판형 고체산화물 연료전지 봉착재로의 이용가능성을 조사하였다 구성층과 일치되는 열팽창 계수 및 화학적 안정성을 봉착재로의 적용에 있어 판단 기준으로 정하였다 실험된 다양한 조성의 유리 및 결정화 유리 시편들중 7.79ZnO-58.52BaO-$28.69SiO_2-5Al_2O_3$(ZBS3-A5) 결정화 유리의 측정된 열팽창 계수값은 $11.02\times10^{-6/^{\circ}C}$로써 YSZ 및 LSC의 평균 열팽창 계수 값과의 차이가 $0.07\timestimes10^{-6/^{\circ}C}$로 매우 작아 봉착시 열응력 발생의 최소화를 기대할수 있었다 이런 ZBS3-A5+LSC 접합 couple의 경우는 ZnCr2O4 의 dis-crete한 입자가 결정화 유리 부위에 형성되었고 역시 시간의 증가에 따라 이러한 입자의 성장은 없었다 특히 ZBS3-A5 구성 성분인 Ba, Zn, Sil 그리고 Al의 YSZ 및 LSC로의 확산은 없어 봉착후에 YSZ 및 LSC의 전기적 특성에 악영향을 미치지 않으리라 판단되었다.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.44-50
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• 1986

Si-ZnO n-n heterojunction diodes were prespared by r.f diode sputtering of the sintered ZnO target on n-type Si single crystal wafers and their structures and electrical properties were studied. The films were grown orientedly with the c-axis of crystallites perpendicular to the substrate surface at low r.f. powder and grown to polycrystalline films with random orientation at high r. f. powder. The crystallite size increased with the increasing substrate temperture The oriented texture films only were used to prepare the photovoltaic diodes and these didoes showed the photovoltaic effect veing positive of the ZnO side for the photons in the wavelength range of 380-1450nm. The sign reversal of phootovoltage which is the property os isotype heterojunction was not observed because of the degeneration of the ZnO films. The diode showed the forward rectification when it was biased with the ZnO side positive. The current-voltage characteristics exhibited the thermal-current type relationship J∝exp(qV/nkT) with n=1.23 at the low forward bias voltage and the tunnelling-current type relationship J∝exp($\alpha$V) where $\alpha$ was constant independent of temperature at the high forward bias voltage. The crystallite size of ZnO films were influenced largely on the photovoltaic properties of diodes ; The diodes with the films of the larger crystallites showed the poor photovoltaic properties. This reason may be cosidered that the ZnO films with the large crystallites could not grow to the electrically continuous films because the thickness of films was so thin in this experiment.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.121-126
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• 2000

Metal/Ceramic structures have many attractive properties, with great potential for applications that demand high stiffness, as well as chemical and biological stability, thermal and electrical insulation. They are currently in use for mechanical and thermal protection in cutting tool and engine parts. With all their great advantage, ceramics suffer from one major problem they are brittle, and are especially susceptible to cracking from surface contacts. Delamination at the interfaces with adjacent layers is a particularly disturbing problem, and can cause premature failure of a composite system. so determination of adhesive properties of coating is one of the most important problems for the extension of the use of coated materials. In this work, mechanical characteristics of Interface of ceramic/Metal composites are evaluated by means of hardness test, indentation test apparent interfacial toughness and bonding strength test. The interface indentation test provides a relation between the applied load(P) and the length of the crack(a) created at the interface between the coating and the substrate.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.544-551
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• 2006

The sealing technique between a glass tube and a copper heat pipe in an evacuated tube solar collector is studied. In this study two different sealing techniques, such as flame method and furnace firing, are examined. After the sealing of a copper to a glass, the oxidation state of the copper and its bonding morphology were examined by SEM and XRD. Its oxidation was retarded by coating of borate solution on the copper, and $Cu_2O(cuprite)$ turned into CuO(tenorite) with increase in a firing temperature and firing time. Porous structure was found in the oxide layer when CuO formed. The best sealing morphology was observed when the thickness of the oxidation layer was less than $20{\mu}m$. The sealing technique performed in a furnace was promising and the satisfactory result was obtained when the sample was fired at $950^{\circ}C$ for 5 min under $N_2$ atmosphere. Annealing procedure is recommended to remove the stress left at the bonding zone.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.781-789
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• 1997

Pressure sintered SiC specimens were joined using MgO-Al2O3-SiO2 (MAS) glass which has a thermal expansion coefficient similar to that of SiC. MAS melt showed excellent behavior of wetting on the SiC substrate over 148$0^{\circ}C$, and the wettability was much influenced by the joining atmosphere. The joining was conducted at 150$0^{\circ}C$ for 30 min in Ar atmosphere. The flexural strength of the joined specimen shows 342~380 MPa up to 80$0^{\circ}C$, which is almost the same as that of as-recieved SiC specimen. However, the flexural strength of the joined specimen decreased to about 80 MPa at 90$0^{\circ}C$ due to softening of the glass melt. The analyses od XRD and WDS show that the reaction between the SiC specimen and the MAS melt produces the oxycarbide glass, which had a high strength and a good stability at high temperatures.

• Journal of Welding and Joining
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• v.28 no.5
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• pp.80-85
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• 2010

This study focused on laser assisted machining (LAM) of silicon nitride ceramic that efficiently removes the material through machining of the softened zone by local heating. The effects of laser-assisted machining parameters were studied for cost reduction, and active application in processing of silicon nitride ceramics in this study. Laser assisted machining of silicon nitride allows effective cutting using CBN tool by local heating of the cutting part to the softening temperature of YSiAlON using by the laser beam. When silicon nitride is sufficiently preheated, the surface is oxidized and decomposed and then forms bloating, micro crack and silicate layer, thereby making the cutting process more advantageous. HIPSN and SSN specimens were used to study the machining characteristics. Higher laser power makes severer oxidation and decomposition of both materials. Therefore, HIPSN and SSN specimens were machined more effectively at higher power.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.