• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.96-97
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• 2003

• Journal of the Korean Ceramic Society
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• v.29 no.6
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• pp.451-458
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• 1992

Dense glass-ceramics for low firing temperature substrate were prepared by addition of CeO2 flux to the glass of MgO-Al2O3-SiO2 system. Glass powders were fabricated by melting at 150$0^{\circ}C$ and ball milling. Glass powder compacts were sintered at 800~100$0^{\circ}C$ for 3h. The crystallization and the shrinkage behaviors of glass powder compacts were analyzed by XRD, DTA and TMA. The shrinkage of glass powder compact increased with increasing the amount of CeO2. Because the softening temperature decreased and the crystallization temperature increased with increasing the amount of CeO2. Apparently, addition of CeO2 prevented formation of $\mu$-cordierite phase from the glass-ceramics and improved formation of $\alpha$-cordierite phase. Therefore crystallization properties were enhanced.

• Journal of the Korean Ceramic Society
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• v.20 no.3
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• pp.199-204
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• 1983

An attempt was made to study wetting behavior of various low temperature molten frist on ceramic substrates including high alumina silicon carbide and porous fired clay plates by Sessile-drop method. The cosine values of contact angles between substrates and molten frist were linear as a function of temperature unless chemical reactions between substrate and molten frit occured. Addition of BaO to frit composition indicated that cosine of values of contact angles were gradually increased with increasing temperature but in the frist contained $Li_2O$ consine values were abruptly increased with increasing temperature after reached a certain temperature. The contact angle increased with increasing roughness of the substrate surface in case of alumina substrate plate.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.82.2-82.2
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• 2012

캐패시터, 액추에이터와 같이 MIM (Metal-Insulator-Metal) 구조를 갖는 디바이스는 높은 소결온도를 갖는 세라믹 유전체/압전체와 고온 내산화성이 낮은 금속 전극의 적층 형태로 인하여 동시 열처리 공정에 있어서 많은 제약이 따른다. 본 연구에서는 소결온도를 대폭 낮춘 저온 소결용 PZT 압전체 테이프를 니켈 금속 포일에 적층하여 동시 열처리를 통하여 소결을 시도하였다. 동시 열처리된 MIM 디바이스의 세라믹과 금속 전극 계면의 미세구조 및 성분 분석을 통하여 계면 반응 기구를 확인하였고, 계면 반응층이 디바이스의 특성에 미치는 영향에 대한 정량적 분석을 수행하였다. 또한 열처리 시간에 따른 계면 반응층의 변화를 관찰하고 반응층의 변화가 특성에 미치는 영향을 분석하였다. 니켈 이외에 니켈 합금인 INCONEL 718과 PZT 세라믹과의 동시 소성을 시도하여 니켈, INCONEL 두 금속 기판과 PZT 사이에 생성되는 계면 반응층의 미세구조와 특성의 차이점을 비교하였고 디바이스로서 사용하기 위한 적합성 여부를 확인하였다.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.83-88
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• 1992

New ceramic substrates firable at low temperature (<1000$^{\circ}C$) were prepared with mixture of alumina and glass powders in CaO-Al2O3-SiO2 system. The substrate of alumina 40 wt% and glass 60 wt%, which was fired between 900∼1000$^{\circ}C$, shows low dielectric constant (5∼8 at 1 MHz), specific gravity of 3.10, relatively low thermal expansion coefficient (5.5${\times}$10-6/$^{\circ}C$ at 40∼500$^{\circ}C$) and excellent surface roughness (0.4∼0.5 ${\mu}$Ra). These properties were thought to be superior to those of conventional Al2O3 ceramic substrates.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.249-256
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• 1997

The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.531-536
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• 2001

SiCl$_4$/CH$_4$/H$_2$계를 사용한 플라즈마 화학증착법(PECVD)으로 실리콘(100) 기판 위에 3C-SiC막을 117$0^{\circ}C$~1335$^{\circ}C$의 온도범위에서 증착하였다. 증착온도, 유입가스비, R$_{x}$ [=CH$_4$/(CH$_4$+H$_2$)], 그리고 r.f. power를 변화시켜 증착막의 결정성에 대해 검토하였다. Thermal CVD에 비해 PECVD법은 박막의 증착속도를 향상시켰다. 증착된 3C-SiC은 (111) 면으로 최대의 우선배향성을 지님을 알 수 있었다. 실리콘 기판 위의 3C-SiC막의 결정성은 R$_{x}$값에 의존하였으며, R$_{x}$가 감소할수록 결정성이 더욱 향상되었다. Free Si가 3C-SiC막과 함께 증착되었으나, 증착온도와 r.f power가 증가함에 따라 free Si의 함량은 감소하였다. 증착온도 127$0^{\circ}C$, 유입가스비 R$_{x}$=0.04, r.f. power가 60W에서 비교적 결정성을 가진 3C-SiC막을 얻을 수 있었다.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.547-552
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• 2003

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputtering at 100 W, 1.33 Pa, Ar/O2=50 : 50, 200$^{\circ}C$, and a target/substrate distance of 4 cm. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, AFM, RBS, and electrometer. All films showed a strong preferred c-axis orientation and the chemical stoichiometry. The propagation velocity of ZnO/IDT/glass of single electrode and double electrode types SAW filter was about 2,589 m/sec, 2,533 m/sec and insertion loss was a minimum value of about -11 dB and -21 dB, respectively.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.505-511
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• 1998

The silicide formation mechanisms of Co/Hf and Co/Nb bilayer on (100) Si have been investigated. We ob-served that crystallographic orientationso f the 500$^{\circ}C$ formed cobalt silcides were different each other with the varying intermediate layers. Epitaxial and non-epitaxial CoSi2 formed simultaneously in Co/Hf/(100Si. While only non-epitaxial CoSi2 formed in Co/Nb/(100) Si. The reason why the crystallographic orientation of CpSi2 is different for those two systems seemed to be relate to the formation and decomposition of stable reaction barriers at high temperature. The stable reaction barrier formed at high temperature could control the uniform diffusion of Co atoms which enables epitaxial growth of CoSi2.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.807-811
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• 2002

In this work, we investigated the deposition behavior of Mo/Si multilayer thin film structures simulated by a PVD process simulator based on Monte Carlo method to assist the optimized fabrication of the high quality mask in EUVL(Extreme Ultra-Violet Lithography) process. The shape of simulated thin film structures turned out to be largely dependent on the gas pressure(1∼30 mTorr), the target-substrate distance(1∼30 cm) and the diffusion length(1∼10 nm). From the simulation studies, it was predicted that relatively uniform thin film structures can be fabricated by decreasing gas pressure and increasing the target-substrate distance.