• Title/Summary/Keyword: 세라믹파괴

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The fracture resistance of heat pressed ceramics with wire reinforcement (금속선 강화에 따른 열 가압 도재의 파절저항)

  • Jo, Deuk-Won;Dong, Jin-Keun;Oh, Sang-Chun;Kim, Yu-Lee
    • The Journal of Korean Academy of Prosthodontics
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    • v.47 no.2
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    • pp.191-198
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    • 2009
  • Statement of problem: Ceramics have been important materials for the restoration of teeth. The demands of patients for tooth-colored restorations and the availability of various dental ceramics has driven the increased use of new types of dental ceramic materials. Improved physical properties of theses materials have expanded its use even in posterior crowns and fixed partial dentures. However, ceramic still has limitation such as low loading capability. This is critical for long-span bridge, because bridge is more subject to tensile force. Purpose: The wire reinforced ceramic was designed to increase the fracture resistance of ceramic restoration. The purpose of this study was to evaluate the fracture resistance of wire reinforced ceramic. Material and methods: Heat pressed ceramic(ingot No.200 : IPS Empress 2, Ivoclar Vivadent, Liechtenstein) and Ni-Cr wire(Alfa Aesar, Johnson Matthey Company, USA) of 0.41 mm diameter were used in this study. Five groups of twelve uniform sized ceramic specimens(width 4 mm, thickness 2 mm, length 15 mm) were fabricated. Each group had different wire arrangement. Wireless ceramic was used as control group. The experimental groups were divided according to wire number and position. One, two and three strands of wires were positioned on the longitudinal axis of specimen. In another experimental group, three strands of wires positioned on the longitudinal axis and five strands of wires positioned on the transverse axis. Three-point bending test was done with universal testing machine(Z020, Zwick, Germany) to compare the flexural modulus, flexural strength, strain at fracture and fracture toughness of each group. Fractured ceramic specimens were cross-sectioned with caborundum disc and grinded with sandpaper to observe interface between ceramic and Ni-Cr wire. The interface between ceramic and Ni-Cr wire was analyzed with scanning electron microscope(JSM-6360, JEOL, Japan) under platinum coating. Results: The results obtained were as follows: 1. The average and standard deviation in flexural modulus, flexural strength and fracture toughness showed no statistical differences between control and experimental groups. However, strain was significantly increased in wire inserted ceramics(P<.001). 2. Control group showed wedge fracture aspects across specimen, while experimental groups showed cracks across specimen. 3. Scanning electron microscopic image of cross-sectioned and longitudinally-sectioned specimens showed no gap at the interface between ceramic and Ni-Cr wire. Conclusion: The results of this study showed that wire inserted ceramics have a high strain characteristic. However, wire inserted ceramics was not enough to use at posterior area of mouth in relation to flexural modulus and flexural strength. Therefore, we need further studies.

Phase Transformation of 2 Components(CaO-, $Y_2O_3$-, MgO-$ZrO_2$) and 3 Components(MgO-$ZrO_2-Al_2O_3)$ Zirconia by X-ray Diffraction and Raman Spectroscopy (X-선회절과 Raman 분광분석을 이용한 2성분계(CaO-, $Y_2O_3$-, MgO-$ZrO_2$) 및 3성분계(MgO-$ZrO_2-Al_2O_3)$ Zirconia의 상전이연구)

  • 은희태;황진명
    • Journal of the Korean Ceramic Society
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    • v.34 no.2
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    • pp.145-156
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    • 1997
  • ZrO2 phase transformations depending on the type and amount of dopants and the sintering temperatures were studied for the 2 components (CaO-, Y2O3-, MgO-ZrO2) and the 3 components(MgO-ZrO2-Al2O3)ZrO2 powder by X-ray diffraction and Raman spectroscopy. In the CaO- and Y2O3-ZrO2 systems, as the CaO and Y2O3 contents increased to 6~15mol% and 3~15mol% respectively, we were not able to identify between tetragonal and cubic in the X-ray diffraction patterns. On the other hand, all Raman modes shifted to lower wavenumbers, decreasing in intensity and the number of bands, markedly. These phenomena were caused by tetragonallongrightarrowcubic phase transformation and interpreted by the breakdown of the wave vector selection rule(k=0) and the structural disorder associated with the formation of oxygen sublattice which was caused by the substitution between Zr4+ ion and Ca2+ or Y3+ ion in ZrO2 matrix. The monoclinic to cubic phase transformation occurred in 10mol% MgO-ZrO2 system. As the Al2O3 content increased from 0 to 20mol% in the MgO-ZrO2-Al2O3 systems, cubic phase transformed to monoclinic phase, this is because the MgO didn't play a role in a stabilizer because of the formation of the spinel(MgAl2O4) by the reaction between MgO and Al2O3, Also, the ZrO2 phase transformation was explained by the change of it's lattice parameters depending on the type and amount of dopants. Namely, as the amount of dopant increased to 10~13mol%, the axial ra-tio c/a came close to unity with increasing the lattice parameter a and decreasing the lattice parameter c. At that time, the tetragonallongrightarrowcubic phase transformation occurred.

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Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG method (EFG 법으로 성장한 β-Ga2O3 단결정의 Sn 도핑 특성 연구)

  • Tae-Wan Je;Su-Bin Park;Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Yeon-Suk Jang;Won-Jae Lee;Yun-Gon Moon;Jin-Ki Kang;Yun-Ji Shin;Si-Yong Bae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.2
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    • pp.83-90
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    • 2023
  • The β-Ga2O3 has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga2O3 has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga2O3 single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga2O3 single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga2O3 were prepared by adding different mole ratios of SnO2 powder to Ga2O3 powder, and β-Ga2O3 single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga2O3 single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga2O3 single crystal according to the Sn doping were extensively investigated.