• Clean Technology
• /
• v.16 no.1
• /
• pp.64-70
• /
• 2010

In this study, we suggest the application of the divided-wall column (DWC) to the existing trichlorosilane(TCS) purification process in the commercial polysilicon manufacturing process. Using Aspen HYSYS V7.1, an extensive simulation study was carried out for the analysis of the energy consumptions and capital cost for the conventional sequential distillation configuration and the DWC for producing a given purity and yield of trichlorosilane. As a result, it is shown that the DWC saves the separation energy by 61% and the equipment cost by 58% compared with the conventional distillation process.

• Journal of the Korean Chemical Society
• /
• v.36 no.2
• /
• pp.255-260
• /
• 1992

A procedure for spectrophotometric determination of traces of phosphorus(P) in high-purity trichlorosilane(TCS) is proposed using an adsorptive separation. $PCl_3$, which is a dominant P impurity within TCS, is first oxidized by oxygen to a stable form as $POCl_3$. $AlCl_3$ is selected as an adsorbent which forms a thermally stable complex with $POCl_3$ in TCS and can be well dissolved in aqueous ethanol solution. The proposed adsorptive separation method is free from the formation of silica gel and gas bubbles during the colorimetric analysis of TCS. The method reveals that the P concentration in a semiconductor-grade TCS is 5.32 ${\mi}g/l$ within the standard deviation of ${\pm}$ 17%. On the other hand, the P concentration of the purified TCS which is separated from the $AlCl_3$${\cdot}$$POCl_3$ complex is reduced to be less than 0.15 ${\mi}g/l$, showing the efficient applicability of $AlCl_3$ to the wet chemical analysis. The proposed method is also tested to verify the effectiveness of other well-known adsorbents.

• Journal of the Korean Chemical Society
• /
• v.35 no.5
• /
• pp.534-538
• /
• 1991

A procedure for spectrophotometric determination of traces of boron in high-purity trichlorosilane (TCS) is proposed utilizing an adsorptive separation. NaCl is chosen as an Lewis base adsorbent which forms a complex with boron compounds in TCS, and is well dissolved in sulfuric acid-quinalizarin color-forming agent without causing an interference in colorimetric measurements. The proposed adsorptive separation method is free from the formation of silica gel and gas bubbles during the analysis of TCS. The method reveals that the boron concentration in a semiconductor grade TCS is 6.1 ${\mu}$g/l within the standard deviation of ${\pm}$20%. On the other hand, the boron concentration of the purified TCS which is separated from NaCl-boron compounds complex is reduced to 0.2 ${\mu}$g/l, showing the efficient applicability of NaCl to the adsorptive separation. The effectiveness of NaCl for the removal of boron in TCS purification is also described in comparison with other well-known adsorbents.