• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.645-651
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• 1990

Effects of excess Si on the properities of the oxide of CVD tungsten silicide were investigated by comparing the characteristics of the two kinds of thermal oxide for CVD-WSi2.7 and WSi3.1 films on the polycrystalline Si film each other. It is reveraled from AES analysis that Si in the surface region of the silicide film is consumed to make composition and resistivity of the silicide film very nonuniform for the case of the oxidation of WSi3.1, while the underlayer polycrystalline Si was consumed for the case of the oxidation of WSi2.7.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.101-101
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• 2015

Photoelectrochemical water splitting is considered as a promising method of transforming solar energy into chemical energy stored in the type of hydrogen. An n-type $WO_3$ semiconductor is one of the most promising photoanodes for hydrogen production from water splitting. Films annealed at lower temperatures consisted of amorphous, whereas films annealed above $500^{\circ}C$ comprised solely of monoclinic $WO_3$. In this study, we observed photoactivity of $WO_3$ as increasing thickness of $WO_3$. And it shows good photoacivity as thickness increases. Also we tried to improve photoactivity through surface modification and bulk modification by using hydrogen treatment and conducting polymer. The photocurrent was measured in potentiostatic method with the three electrode system. A Pt wire and Ag / AgCl electrode were used as the counter electrode and the reference electrode, respectively. photocurrent-time (I-T) curve was measured at a bias potential of 0.79 V.

• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.121-127
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• 1997

Vanadium tungsten oxide thin films were formed by RF magnetron sputtering and the effects of tungsten addition on the crystallinity and on the electrochemical behavior were investigated. X-ray analysis revealed that amorphized films could be obtained by tungase addition. In order to investigate the electrochemical behavior of the vanadium tungsten oxide films, electrochemical insertion and extraction of lithium were out in 1m $LiCIO_4$-PC-DME electrolyte using litium metal as a counter electrode. When the tungsten was added to the $V_2O_5$ films, cycling reversibility was considerably improved. Electrochemical test showed the cell capacity of about $70\mu\;Ah/\textrm{cm}^2-\mu\textrm{m}$ when the amount of additive tungseten reached 30 atomic percent. No appreciable degradation of the cell capacity could be observed after hundred cycles of insertion and extration od Li.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.124-128
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• 2005

To produce a highly sensitive uncooled microbolometer, the development of a high-performance thermometric material is essential. In this work, amorphous vanadium-tungsten oxide was developed as a thermometric material at a low temperature of $300^{\circ}C$, and the microbolometer, coupled with the material, was designed and fabricated using surface micromachining technology. The vanadium-tungsten oxide showed good properties for application to the microbolometer, Such as a high temperature coefficient of resistance of over -4.0 $\%$/K and good compatibility with the surface micromachining and integrated circuit fabrication process due to its low fabrication temperature. As a result, the uncooled microbolometer could be fabricated with high detectivity over $1.0\;{\times}\;10^9\;cmHz^{1/2}/W$ at a bias current of $7.5\;{\mu}A$ and a chopper frequency of 10-20 Hz

• Korean Journal of Materials Research
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• v.27 no.10
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• pp.513-517
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• 2017

An optimum route to fabricate a hybrid-structured W powder composed of nano and micro size powders was investigated. The mixture of nano and micro W powders was prepared by a ball milling and hydrogen reduction process for $WO_3$ and W powders. Microstructural observation for the ball-milled powder mixtures revealed that the nano-sized $WO_3$ particles were homogeneously distributed on the surface of large W powders. The reduction behavior of $WO_3$ powder was analyzed by a temperature programmed reduction method with different heating rates in Ar-10% $H_2$ atmosphere. The activation energies for the reduction of $WO_3$, estimated by the slope of the Kissinger plot from the amount of reaction peak shift with heating rates, were measured as 117.4 kJ/mol and 94.6 kJ/mol depending on reduction steps from $WO_3$ to $WO_2$ and from $WO_2$ to W, respectively. SEM and XRD analysis for the hydrogen-reduced powder mixture showed that the nano-sized W particles were well distributed on the surface of the micro-sized W powders.

• Journal of the Korean Chemical Society
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• v.40 no.1
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• pp.28-36
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• 1996

The pentanuclear complexes have been obtained by the reactions of molybdenum(VI) and tungsten(VI) polynuclear complexes with molybdenum(O) and tungsten(O) dinitrosyl mononuclear complexes, and methylthioamidoxime. The prepared complexes (n-Bu4N)2[Mo4O12Mo(NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2](1), (n-Bu4N)2[W4O12Mo(NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2](2), (n-Bu4N)2[Mo4O12W (NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2] (3) have been characterized by elemental analysis, infrared, UV-visible and 1H NMR spectra. The complexes are elucidated the cis-{M(NO)2}2+(M = Mo, W) unit and a slight delocalization by spectroscopy. The structure of (n-Bu4N)2[W4O12Mo(NO) 2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2] was determined by X-ray single crystal diffraction. Crystal data are follows: Monoclinic, $P21}a$, a = 22.14(2) $\AA$, b = 14.93(1) $\AA$, c = 23.20(1) $\AA$, $\beta$ = 111.08(6) $\AA$, V = 7155(9) $\AA$, Z = 4, final R = 0.072 for 6191(I > $3\sigma(I)).$ The structure of complex forms two dinuclear [W2O5{CH3SCH2C(NH2)NHO}{CH3SCH2C(NH)NO}] and a central {Mo(NO)2} 2+ core. The geometric structure of the {Mo(NO)2} 2+unit is the formally cistype and C2v symmetry.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1263-1269
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• 1999

An FBAR(Solidly Mounted Resonator) was fabricated using reflector layers which prohibit the penetration of bulk acoustic wave into substrate. The SMR consisted of top and bottom electrodes(Al films), a piezoelectric layer (ZnO film), reflector layers(W/$Si_2$ films) and Si substrate. The electrodes were deposited by dc sputtering. The piezoelectric layer and the reflector layers were deposited by rf magnetron sputtering. The control of crystallinity, microstructures and electric properties of each layer was essential for attaining the optimum FBAR characteristics. Under the best deposition conditions for FBAR devices, the ZnO films had highly c-axis preferred orientation(${\sigma}=2.17^{\circ}$), resistivity of $10^4\;{\omega}cm$, and surface roughness of 10.6 ${\AA}$. On the other hand, the surface roughness of W and $Si_2$ films was 16 ${\AA}$ and 33 ${\AA}$, respectively, and the resistivity of Al film was $5.1{\times}10^{-6}\;{\Omega}cm$. The SMR devices were fabricated by the conventional semiconductor processes. In the resonance conditions of the SMR, the series resonance frequency (fs) and the parallel resonance frequency(fp) were 1.244 GHz and 1.251 GHz, respectively and the quality factor(Q) was 1200.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.180-190
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• 1992

Some solutions to several major problems in ZMR such as agglomeration of polysilicon, slips and local substrate melting are described. Experiments are performed with varying polysilicon thickness and capping oxide thickness. The aggmeration can be eliminated when nitrogen is introduced at the capping oxide layer-to-polysilicon interface and polysilicon-to-buried oxide layer interface by annealing the SOI samples at $1100^{\circ}$ in $NH_3$ ambient for three hours. The slips and local substrate melting are removed when the back surface of silicon substrate is sandblasted to produce the back surface roughness of about $20{\mu}m$. The subboundary spacing increases with increasing polysilicon thickness and the uniformity of recrystallized SOI film thickness improves with increasing capping oxide thickness, improving the quality of recrystallized SOI film. When the polysilicon thickness is about $1.0{\mu}m$ and the capping oxide thickness is $2.5{\mu}m$, the thickness variation of the recrystallized SOI film is about ${\pm}200{\AA}$ and the subboundary spacing is about $70-120{\mu}m$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.22-22
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• 2001

전통적으로 초경합금은 무라까미 용액에서 에칭하거나 묽은 염산에 넣고 끓이는 방법에 의해 그 밋구조를 관찰하였다. 그러나 carbide 입자가 suvmicron 크기인 초경합금에서는 전통적인 에칭 방법으 에칭 후에도 입자/기지상, 입자/입자 입계를 동시에 구분시킬 수 있는 SEM 사진을 얻을 수 없다. 본 연구에서는 submicron 크기 초경합금의 고배율 SEM 사진을 얻을 수있는 90H2O2 - 10HNO3 (vol%)의 새로운 에칭 용액을 개발하였다. 경명의 submicron 크기 WC-Co 시편을 샐운 에칭 용액인 90H2O2 - 10HNO3 (vol%)에 넣고 약 6$0^{\circ}C$에서 약 12분 동안 에칭하였다. 에칭에 의해 Co 기지상은 빠르게 제기(dissolution)되었고, 동시에 표면의 WC 입자들은 각각의 결정학적 방향에 따라 천천히(slowly) 다른 속도로 부식(sissolution)되었다. 고배율 SEM을 관찰한 결과 WC/기지상 계면과 WC/WC 입계가 명화갛게 관찰되었다. WC 입자의 성장을 억제시키는입자성장 억제제(Cr3C2, TaC,VC)가 첨가된 WC Co 초경합금을 새로운 에칭 용액인 90H2O2 - 10HNO3 (vol%)에 넣고 약 6$0^{\circ}C$에서 약 12분동안 에칭하였다. 매우 작은 입자를 갖는 미세구조임에도 불구하고 고배율 SEM에서 WC/기지상 계면과 WC/WC 입계가 명확하게 관찰되었다. 90H2O2 - 10HNO3 (vol%)에서 Co 기지상이 빠르게 제거되는 것은 산 (acid)인 HNO3)에서 금속인 Co가 쉽게 녹기 때문이다. 동시에 WC 입자들이 각각 다른 속도로 에칭 된 것은 강력한 산화제인 H2O2가 각각의 WC입자 표면에 얇은 텅스텐 산화물 층을 형성시켰고 이들이 산인 HNO3에서 녹았기 때문이다. 본 연구에서 개발된 새로운 에칭 용액인 90H2O2 - 10HNO3 (vol%)의 에칭 원리가 똑같이 적용 가능한 다른 종류의 초경 합금에서도 사용이 가능할 것으로 판단된다.로 판단된다.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.5
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• pp.423-429
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• 2008

This work was carried out to improve the performance of anodic electrocatalysts in direct ethanol fuel cell(DEFC). PtRu and $Pt_5Ru_4M$(M= Ni, Sn, Mo and W) electrocatalysts were prepared by using a $NaBH_4$ reduction method. Alloy crystal structure and particle size of electrocatalysts were characterized by X-ray diffraction(XRD) and transmission electron microscopy(TEM). The XRD analysis of the electrocatalysts revealed that the face-centered cubic(fcc) peaks shifted to slightly higher diffraction angles when third metals were added. Average size of the uniform particles was observed to be approximately $3{\sim}3.5\;nm$ from the TEM image. The electrochemical measurements were carried out in the solution 1M $H_2SO_4$ and 1M $C_2H_5OH$ at room temperature. Cyclic-voltammogram results showed that $Pt_5Ru_4W$ electrocatalyst exhibited much higher current density for ethanol oxidation of $2.73\;mA/cm^2$ than PtRu electrocatalyst of $0.73\;mA/cm^2$.