• Proceedings of the KAIS Fall Conference
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• 2006.05a
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• pp.602-604
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• 2006

본 논문에서는 불순물 잠복현상 규명에 필요한 금속산화물 용해 현상과 이온성 불순물의 금속산화물 흡착 현상 조사를 위해 산소 농도 변화 시 금속 산화물 형성 속도 및 구조/입자 크기 변화에 대해 조사하였다. 금속산화물 형성 속도 조사 결과 철산화물의 경우 산소농도가 높으면 산화물 생성속도가 30% 감소하였다. 금속산화물 구조/입자 크기 변화 조사 결과 철산화물의 경우 산소 농도가 2 L/min일 때 입자는 약간 커지는 경향을 보였다. 입자의 크기가 증가함에 따라 입자간 뭉침현상이 나타나므로 불순물의 침입이 가능하여 공침현상이 발생할 가능성이 증가할 것으로 판단된다. 따라서 산소의 농도에 따라 불순물이 침전물 속으로 숨어들 수도 있고 다시 빠져나올 수 있는 잠복현상의 가능성이 예측된다.

• Journal of the Korean Applied Science and Technology
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• v.13 no.1
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• pp.55-65
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• 1996

저 분자량($M_{w}=1970$)의 poly(styrene)(PS)와 poly(vinylmethylether)(PVME)의 블렌드를 열 산화시킬 때 저 분자량의 PS의 첨가량이 증가할수록 유도기간이 증가하며 열 산화속도는 감소함을 알 수 있었다. 열 산화과정 동안 저 분자량 PS와 PVME 블렌드는 상 분리를 보이지 않았다. 저 분자량을 갖는 PS와 PVME 블렌드에서 PVME의 산화 속도는 높은 분자량을 갖는 PS와 PVME 블렌드에서 PVME의 열 산화 속도보다 훨씬 느려짐을 보였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.360-367
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• 1996

The OISF (Oxidation Induced Stacking Fault)is expected to affect the electrical properties in Si single crystals, and the nuclei of OISF are believed to be formed during the crystal growing process. Initial oxygen concentration, dopant type and its density, and cooling rate are regareded as major factors on OISF formation. In this study, the variations of OISF density under various cooling rate were investigated. Si single crystal was heated to $1400^{\circ}C$ in Ar ambient and cooled down to room temperature at different cooling rate, using horizontal tube furnace. After that, they were oxidized at $1150^{\circ}C$, and then, OISF was observed with optical microscope. The relation between oxide procipitates and OISF nucleation was investigated by FTIR analysis. As a result, it was found that there exists the intermediate cooling rate range in which OISF nucleation is highly enhanced. And also, it was found that OISF nucleation is closely related with silicon oxide procipitation in Si single crystals.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.05a
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• pp.390-393
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• 2010

The thermal decomposition rate of ammonium perchlorate with 3% of yellow iron oxide, FeOOH was found to be much faster than with red iron oxide, $Fe_2O_3$. By applying yellow and red iron oxide as a burning rate modifier to HTPB/AP propellant, burning rate of the HTPB/AP propellant with yellow iron oxide was shown to be 10 ~ 25% faster than with red iron oxide. There was no special difference in viscosity and hardness buildup of yellow and red oxide added HTPB/AP formulations.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.816-822
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• 1996

Dependence of graphitic structure on oxidation of carbon materials was discussed using furan resin-derived carbon with inorganic compounds such as SiC and TiO2 Oxidation of carbon was governed by active site. I. e surface area regardless of the degree of graphitization. When oxidation was considered for not unit weight but unit area graphitization was important factor for oxidation so that the degree of graphitization increased the oxidation rate was delayed. Graphite (tiO2 addition) and turbostratic graphite(SiC addition) were oxidized through the same mechanism. In carbon materials with different structure components more than 2 oxidation of each component was different and amorphous component without the influence of additives on the surface was selectively oxidized in the intial oxidation stage.

• Korean Journal of Food Science and Technology
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• v.29 no.6
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• pp.1094-1100
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• 1997

Effects of sodium hypochlorite (NaOCl) concentration, temperature and pH on oxidation mechanism of corn starch were investigated. The rate of oxidation was dependent on the concentration of hypochlorite, pH and temperature of oxidation. The reaction was either first or second order depending on the concentration of NaOCl. At oxidant concentration of $0.75{\sim}3.0%$ active Cl/g starch, the reaction was first-order and it was second-order at $3.75{\sim}4.5%$ active Cl/g starch. The first-order rate constants were increased with increasing oxidant concentration. The rate of oxidation of starch was highest at pH 7 and decreased with increasing acidity or alkalinity of the medium. As the reaction temperature increased, the rate of oxidation was increased.

• Journal of the Korean Chemical Society
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• v.36 no.5
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• pp.644-651
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• 1992

The kinetics of the gas phase reaction of ozone(∼0.5 torr) with sulfur trioxide was investigated in the range of 6∼12 torr pressure at 69∼150${\circ}C$. The reaction rate of ozone with sulfur trioxide was faster than the reaction rate of $O_3 in the presence of CO_2 alone. No evidence for a molecular reaction of O_3 with SO_3 was found and the faster rate is probably due to impurity (HX) from the SO_3 reactant which gives rise to a chain reaction initiated by O_3 ＋ HX → OH ＋ O_2 ＋ X and also SO_3 has a larger collision diameter, which may be attributed to the O3 thermal decomposition more feasibly. The proposed experimental law [-d(O_3)/dt] = k_a(SO_3)(O_3) ＋ k_b(O_3)^{3/2} gives a rate constant ka(M-1 s-1) = (1.55 {\pm} 0.67) {\times} 105 e-{(9.27 0{\pm}0.43)kcal/RT}.$

• Aerospace Engineering and Technology
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• v.6 no.2
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• pp.205-210
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• 2007

A LOX pump rotordynamic design was performed for a 75 ton thrust liquid rocket engine. Axial positions of an inducer, an impeller and bearings on a shaft are decided on the basis of the experience achieved by previously developed turbopump which has the similar layout. The result of pump hydraulic design was reflected in the present study to decide axial length of the inducer and impeller. A distance from the rear bearing to the impeller was considered as a design parameter for load distribution of the bearings. Asynchronous eigenvalue analysis was performed as a function of rotating speeds and bearing stiffness to investigate critical speed of the LOX pump. From the numerical analysis, it is found that the LOX pump with the proper bearing loads safely operates as a sub-critical rotor of which critical speed is high enough compared to the operating speed 11,000 rpm.

• Journal of the Korean Chemical Society
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• v.18 no.2
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• pp.117-125
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• 1974

The catalytic reaction between carbon monoxide and oxygen was investigated in the presence of catalysts which were specially treated by applying an annealing method at different monoxide and oxygen and at reaction temperatures in the region of partial pressures of carbon $40^{\circ}C$ to $95^{\circ}C$. The oxidation rate is highest on NiO annealed at low temperature in vacuum. The data has been correlated with the first order kinetics, and the activation energies from the Arrhenius equation are found to be 4Kcal/mole in the region of the experimental temperatures. The excess oxygen in NiO obtained from the decomposition of $NiCO_3$does not cause activation at $95^{\circ}C$. But NiO catalysts annealed again in vacuum display activation even at $40^{\circ}C$. The quantity of the excess oxygen in NiO surfaces seems to be the controlling factor in determining the rates of oxidation of carbon monoxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.230-230
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• 2013

플라즈마를 활용한 미세 패턴의 건식 식각은 반도체 소자 공정에 있어서 가장 중요한 기술 중 하나이다. 한편, 매년 발행되는 ITRS Roadmap 에 따르면 DRAM 의 1/2 pitch 는 감소하는 동시에 Contact A/R (Aspect Ratio) 는 증가하고 있다. 이러한 추세 속에서 기존의 공정을 그대로 활용할 경우 식각물의 프로파일 왜곡 혹은 휨 현상이 발생하고 식각 속도가 저하되며 이러한 특성들이 결과적으로는 생산성의 저하로 이어질 수 있다. 이러한 현상을 최소화하기 위해서는 무엇보다 독립된 plasma parameter 들이 식각물의 프로파일 혹은 식각 속도 등에 어떠한 영향을 주는 지에 대한 학문적 이해가 필요하다. 본 논문에서는 최소 CD (Critical Dimenstion) 100nm, 최대 A/R 30 인 HARC (High Aspect Ration Contact hole) 의 식각 특성이 plasma parameter 에 따라 어떻게 변하는지 확인해 보고자 한다. 산화물의 식각은 대표적인 high density plasma source 중의 하나인 ICP에서 진행하였으며 기존에 알려진 plasma parameter 에 더하여 자장의 인가가 산화물의 식각 특성에 어떠한 영향을 주는지 살펴보고자 전자석을 ICP 에 추가로 설치하여 실험을 진행하였다. 결과적으로, plasma parameter 에 따른 혹은 자장의 세기 변화에 따른 산화물의 식각 실험을 플라즈마 진단 실험과 병행하여 진행함으로써 다양한 인자에 따른 산화물의 식각 메커니즘을 정확하게 이해하고자 하였다. 실험 내용을 요약하면 다음과 같다. 먼저, 전자석의 전류 인가 조건에 따라 축 방향 혹은 반경 방향으로의 자장의 분포가 달라질 수 있음을 확인하였고 플라즈마 진단 결과 축 방향 혹은 반경 방향으로의 자장이 증가하였을 때 고밀도의 플라즈마가 형성될 수 있음은 물론 반경 방향으로의 플라즈마 밀도의 균일도가 향상됨을 확인할 수 있었다. 또한 ICP 조건에서 바이어스 주파수, 압력, 바이어스 파워, 소스 파워, 가스 유량 등의 plasma parameter 가 산화물의 식각 특성에 미치는 영향 및 메커니즘을 규명하였고 이 과정을 통해 최적화된 프로파일을 바탕으로 축 방향 혹은 반경 방향으로 증가하는 자장을 인가하였을 때 (M-ICP 혹은 자화 유도 결합 플라즈마) ICP 대비 산화물의 식각 속도가 증가함은 물론 PR-to-oxide 의 선택비가 개선될 수 있음을 확인할 수 있었다. 자장의 인가에 따른 산화물의 정확한 식각 메커니즘은 향후의 실험 진행을 통해 이해하고 이를 통해 궁극적으로는 산화물의 식각 공정이 나아가야 할 올바른 방향을 제시하고자 한다.