• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.39-39
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• 2007

원자층 증착(Atomic Layer Deposition: ALD) 방법은 반응물질들을 펄스형태로 챔버에 공급하여 기판표면에 반응물질의 표면 포화반응에 의한 화학적 흡착과 탈착을 이용한 박막증착기술이다. ALD법은 기존의 화학적 기상증착(Chemical Vapor Deposition: CVD)과 달리 자기 제한적 반응(self-limiting reaction) 에 의하여 반응가스가 기판 표면에서만 반응하고 가스와 가스 간에는 반응하지 않는다. 따라서 박막의 조성 정밀제어가 쉽고, 파티클 발생이 없으며, 대면적의 박막 증착시 균일성이 우수하고, 박막 두께의 정밀 조절이 용이한 장점이 있다. 이러한 ALD 방식으로 3차원의 반도체 장치 구조물에 산화막 등을 형성하는 공정에서 중요한 요소 중의 하나는 전구체의 충분한 공급이다. 따라서 증기압이 높은 전구체를 선호하는 경향이 있다. 그러나 증기압이 낮은 전구체를 사용할 경우, 공급량이 부족하여 단차 도포성(step coverage)이 떨어지는 문제가 있다. 원자층 증착 공정에서 전구체를 충분히 공급하기 위해전구체 온도를 증가시키거나 전구체의 공급시간을 늘리는 방법을 사용한다. 그러나 전구체 온도를 상승시키는 경우, 전구체의 변질이나 수명을 단축시키는 문제점을 발생시킬 수 있으며. 전구체를 충분히 공급하기 위하여 전구체의 공급시간을 늘이는 방법을 사용하면, 원하는 박막을 형성하기 위하여 소요되는 공정시간과 전구체 사용량이 증가된다. 본 논문에서는 이러한 문제점을 해결하기 위해 반응기 안에서 전구체 노출 시간을 조절하는 새로운 ALD 공정을 소개한다. 특히 이러한 기술을 적용하면 나노튜브를 성장시키는데 매우 유리하다. 본 연구에서 전구체 노출 시간을 조절하기 위하여 사용된 ALD 장비는 Lucida-D200-PL (NCD Technology사)이며 (TEMA)Zr와 H2O를 사용하여 ZrO2 나노튜브를 폴리카보네이트 위에 성장시켰다. 전구체의 노출 시간은 반응기의 Stop 밸브를 이용하여 조절하였으며, SEM, TEM 등을 이용하여 나노튜브의 균일성과 단차피복성 등의 특성을 관찰하였다. 그 결과 전구체 노출시간을 조절함으로써 높은 종횡비를 갖는 나노튜브를 성장 시킬 수 있음을 확인하였다. 또한 낮은 증기압을 가지는 전구체를 이용하여도 우수한 특성의 나노튜브를 균일하게 성장시킬 수 있었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Journal of Korea Society of Industrial Information Systems
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• v.12 no.5
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• pp.1-13
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• 2007

In this research, we found out that bridging nodes have great effect on the robustness of protein-protein interaction networks. Until now, many researchers have focused on node's degree as node's essentiality. Hub nodes in the scale-free network are very essential in the network robustness. Some researchers have tried to relate node's essentiality with node's betweenness centrality. These approaches with betweenness centrality are reasonable but there is a positive relation between node's degree and betweenness centrality value. So, there are no differences between two approaches. We first define a bridging node as the node with low connectivity and high betweenness value, we then verify that such a bridging node is a primary factor in the network robustness. For a biological network database from Internet, we demonstrate that the removal of bridging nodes defragment an entire network severally and the importance of the bridging nodes in the network robustness.

• Progress in Medical Physics
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• v.19 no.2
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• pp.102-112
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• 2008

We developed a high-resolution micro-CT system based on rotational gantry and flat-panel detector for live mouse imaging. This system is composed primarily of an x-ray source with micro-focal spot size, a CMOS (complementary metal oxide semiconductor) flat panel detector coupled with Csl (TI) (thallium-doped cesium iodide) scintillator, a linearly moving couch, a rotational gantry coupled with positioning encoder, and a parallel processing system for image data. This system was designed to be of the gantry-rotation type which has several advantages in obtaining CT images of live mice, namely, the relative ease of minimizing the motion artifact of the mice and the capability of administering respiratory anesthesia during scanning. We evaluated the spatial resolution, image contrast, and uniformity of the CT system using CT phantoms. As the results, the spatial resolution of the system was approximately the 11.3 cycles/mm at 10% of the MTF curve, and the radiation dose to the mice was 81.5 mGy. The minimal resolving contrast was found to be less than 46 CT numbers on low-contrast phantom imaging test. We found that the image non-uniformity was approximately 70 CT numbers at a voxel size of ${\sim}55{\times}55{\times}X100\;{\mu}^3$. We present the image test results of the skull and lung, and body of the live mice.

• Clean Technology
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• v.25 no.1
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• pp.46-55
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• 2019

CdS and CdZnS/ZnO materials were prepared using precipitation method and used as photocatalysts for the photocatalytic degradation of rhodamine B (RhB) under visible light irradiation. The prepared photocatalysts were also characterized by XRD and UV-vis DRS. The results indicated that the photocatalysts with intended crystalline structures were successfully obtained and both the CdS and CdZnS/ZnO can absorb visible light as well as UV. The photocatalytic activities were examined with the addition of scavenger for various active chemical species and the difference of reaction mechanisms over the catalysts were discussed. The $CH_3OH$, KI and p-benzoquinone were used as scavengers for ${\cdot}OH$ radical, photogenerated positive hole and ${\cdot}O_2{^-}$ radical, respectively. The CdS and CdZnS/ZnO showed different photocatalytic degradation mechanisms of RhB. It can be postulated that ${\cdot}O_2{^-}$ radical is the main active species for the reaction over CdS photocatalyst, while the photogenerated positive hole for CdZnS/ZnO photocatalyst. As a result, the predominant reaction pathways over CdS and CdZnS/ZnO photocatalysts were found to be the dealkylation of chromophore skeleton and the cleavage of the conjugated chromophore structure, respectively. The above results may be mainly ascribed to the difference of band edge potential of conduction and valence bands in CdS, CdZnS and ZnO semiconductors and the redox potentials for formation of active chemical species.