• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.84-88
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• 1999

The behavior of oxygen precipitation was investigated in radial direction using Si wafers with different vacancy-related defects generation area. The behavior of oxygen precipitation in radial direction is strongly dependent on the size of vacancy rich area which is related with crystal growth condition. Oxygen precipitation rate is more enhanced in vacancy rich area than that of interstitial rich area. And anomalous oxygen precipitation is generated in the marginal bands of vacancy and interstial area. In V/I boundary, however, oxygen precipitation is suppressed to nearly perfect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.246-251
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• 2014

Recent studies have shown methods of improving solar cell efficiency. Especially on single crystalline silicon wafer which is high-efficiency solar cell material that has been widely studied. Interstitial oxygen (Oi) is the main impurity in the Czochralski (Cz) growing method, and excess of this can form precipitates during cell fabrication. We have demonstrated the effect of Oi impurity and oxygen precipitation concentration of the wafer on Cz-silicon solar cell efficiency. The result showed a decrease in cell efficiency as Oi and oxygen precipitation increase. Moreover, we have found that the critical point of [Oi] to bring higher cell efficiency is at 14.5 ppma in non-existent Bulk Micro Defect (BMD).

• Journal of the Korean Electrochemical Society
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• v.13 no.2
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• pp.132-137
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• 2010

This study is concerned the electrocatalytic generation of oxygen gas at electrochemically deposited manganese oxide electrode in KOH solution. Manganese oxide nanoparticles electrodeposited onto relatively substrate, e.g glassy carbon, Au, Ti electrode. MnOx is electrodeposited in nanorod structure which cover the overall surface of the substrate. The $\gamma$-MnOOH that is kind of manganese oxide species plays a significant role as a catalytic mediator, which promote 4-electron reduction process. Modified electrodes with electrodeposited manganese oxide structures resulted in significant decrease in the anodic polarization compared with the unmodified electrodes in alkaline media.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.119-125
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• 1992

Oxygen segregation in horizontal-magnetic-field-applied Czochralski (HMCZ) silicon crystals has been studied as a function of magnetic field strength (B) and crucible rotation rate (C). Along the axis of 57mm din. <100> crystals grown under B=2, 3, 4 kG and C=4-15rpm, the oxygen distribution was usually saw-tooth shaped and fluctuated unevenly. Compared to the conventional CZ method, this result seems to indicate that the horizontal magnetic field, at levels used in the present experiment, had a destabilizing influence on oxygen transport to the growth interface. On the other hand, as C increased, the oxygen fluctuation lessened, and [0] increased overall. At B=2 kG, an oxygen profile in a level of 27-36 ppma was achieved by a programmed ramp of C. Oxygen precipitation behavior of the HMCZ silicon during a simulated device manufacturing process was compared and found to be inferior to that of typical CZ silicon. The uneven oxygen profile in the as-grown state was identified as the major source of poor precipitation uniformity in the HMCZ silicon.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.29-38
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• 1998

In this paper, we have induced a model for the growth and dissolution of oxygen precipitates which is generated during arbitrary thermal treatments or VLSI processes in CZ-grown silicon. Based on diffusion-limited growth law and detailed balance equilibrium theory, growth and dissolution rates are induced and inserted into a set of chemical rate equations and a Fokker-Planck equation. Then this is solved by numerical analysis. And because phenomenon at the silicon surface must be considered differently in various annealing conditions, in particular in $O_2$ ambient we have considered the growth model of SiO$_2$ at the surface of silicon wafer and the enhancement of oxygen solubility. By this method, oxygen depth profile and density distribution of oxygen precipitates are calculated more accurately than the other simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.238-244
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• 1998

Sn-rich합금의 석출 현상을 조사하였다. 첫째, 대기중과 진공 중에서 용해된 90Sn-o10Bi(wt%)합금을 $140^{\circ}C$에서 용체화 처리한 후 석출반응을 조사하였다. 90Sn-10Bi(wt%)합금은 불연속 석출(DP)현상을 나타냈다. 공기 중에서 용융된 시료의 DP반응이 진공 중에서 용융된 시료보다 빠르게 진행되었다. 이것은 공기 중에서 용융하는 과정에서 시료에 용존된 산소에 의해 입계 에너지가 감소한 것에 기인하는 것으로 판단된다. 둘째, 용융 후 서냉 응고된 Sn-Bi(-In)합금을 $140^{\circ}C$이하의 온도에서 열처리하여 미세조직 변화를 조사하였다. 명확한 고경각 입계가 존재하지 않는 응고조직에서, 편석영역으로부터 DP반응이 진행되어 석출셈이 형성되었다. DP반응선단에는 반응계면이 관찰되었다. 이 현상은, 이제까지 알려진 바와는 다르게, DP반응이 반응 전에 존재하는 고경각 입계뿐만 아니라 재결정현상에 의해 새로운 석출계면이 생성될 수 있음을 의미한다. 이러한 재결정 현상은 확산에 의한 정합변형(coherency strain)으로 설명된다.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.198-203
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• 1998

액체금속로용 금속연료인 U-10wt.%Zr 합금의 기지조직은 공석조직으로 $\alpha$uranium과 UZr$_2$인 $\delta$상이 교대로 나타나는 층상조직을 이루고 있다. 잘 발달된 층상조직의 두께는 $\alpha$U이 40-8$\mu\textrm{m}$, $\delta$상인 UZr$_2$는 20-30$\mu\textrm{m}$로 $\alpha$U이 $\delta$상의 2-3배 정도 된다. 기지조직내에 나타나는 둥근 형태의 석출물 크기는 ø5-12$\mu\textrm{m}$이며, 응집된 석출물의 크기는 ø15-25$\mu\textrm{m}$이다. 석출물의 TEM SADP과 EDS 분석결과 순수한 $\alpha$Zr이 아니고 산소에 의하여 안정화되고 소량의 uranium을 함유한 Zr rich 상으로 $\alpha$Zr과 같은 hexagonal 결정구조를 갖는다. Rod 형태 및 사각형태의 석출물은 tetragonal 결정구조를 갖는 SiZr$_2$ 상이다.

• Proceedings of the Korean Vacuum Society Conference
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• 1992.02a
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• pp.93-94
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• 1992

2X1018 ions/cmz at 180 keV and post-implantation annealing at 12500C for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOl layer after high temperature annealing. The influence of the precipitates to the electrical property of the SOl layer was discussed. And the Iimiting factor to the decrease of the precipi tates during post-implantation anneal ing was discussed also.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.91-92
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• 1999