• Title/Summary/Keyword: 빔쉐이핑

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Patterning of ITO on Touch Screen Panels using a beam shaped femtosecond laser (빔 쉐이핑된 펨토초 레이저를 이용한 터치스크린 패널의 ITO 박막 패터닝)

  • Kim, Myung-Ju;Kim, Yong-Hyun;Yoon, Ji-Wook;Choi, Won-Seok;Cho, Sung-Hak;Choi, Jiyeon
    • Laser Solutions
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    • v.16 no.4
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    • pp.1-6
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    • 2013
  • Femtosecond laser patterning of ITO on a touch screen panel with a shaped fs laser beam was investigated. A quasi flat-top beam was formed using a variable mask and a planoconvex lens. The spatial profile of the original Gaussian beam and the shaped beam were monitored by a CCD beam profiler. The laser patterned ITO film was examined using an optical microscope, Scanning Electron Microscope (SEM) with Energy Dispersive X-ray Spectroscopy (EDS), and Atomic Force Microscope (AFM). It turned out that the quality of the ITO pattern fabricated by a shaped beam is superior to that of the pattern without beam shaping in terms of debris generation, height of the craters, and homogeneity of the bottom. Optimum processing window was determined at the laser irradiance exhibiting 100% removal of Sn. The removal rate of In was measured to be 83%.

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Study of ablation depth control of ITO thin film using a beam shaped femtosecond laser (빔 쉐이핑을 이용한 펨토초 레이저 ITO 박막 가공 깊이 제어에 대한 연구)

  • Kim, Hoon-Young;Yoon, Ji-Wook;Choi, Won-Seok;Stolberg, Klaus;Whang, Kyoung-Hyun;Cho, Sung-Hak
    • Laser Solutions
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    • v.17 no.1
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    • pp.1-6
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    • 2014
  • Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

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DPSS UV laser projection ablation of 10μm-wide patterns in a buildup film using a dielectric mask (Dielectric 마스크 적용 UV 레이저 프로젝션 가공을 이용한 빌드업 필름 내 선폭 10μm급 패턴 가공 연구)

  • Sohn, Hyonkee;Park, Jong-Sig;Jeong, Su-Jeong;Shin, Dong-Sig;Choi, Jiyeon
    • Laser Solutions
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    • v.16 no.3
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    • pp.27-31
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    • 2013
  • To engrave high-density circuit-line patterns in IC substrates, we applied a projection ablation technique in which a dielectric ($ZrO_2/SiO_2$) mask, a DPSS UV laser instead of an excimer laser, a refractive beam shaping optics and a galvo scanner are used. The line/space dimension of line patterns of the dielectric mask is $10{\mu}m/10{\mu}m$. Using a ${\pi}$ -shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam; and a telecentric f-${\theta}$ lens focuses it to a $115{\mu}m{\times}105{\mu}m$ flat-top beam on the mask. The galvo scanner before the f-${\theta}$ lens moves the beam across the scan area of $40mm{\times}40mm$. An 1:1 projection lens was used. Experiments showed that the widths of the engraved patterns in a buildup film ranges from $8.1{\mu}m$ to $10.2{\mu}m$ and the depths from $8.8{\mu}m$ to $11.7{\mu}m$. Results indicates that it is required to increase the projection ratio to enhance profiles of the engraved patterns.

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Direct UV laser projection ablation to engrave 6㎛-wide patterns in a buildup film (빌드업 필름의 선폭 6㎛급 패턴 가공을 위한 직접식 UV 레이저 프로젝션 애블레이션)

  • Sohn, Hyonkee;Park, Jong-Sig;Jeong, Jeong-Su;Shin, Dong-Sig;Choi, Jiyeon
    • Laser Solutions
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    • v.17 no.3
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    • pp.19-23
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    • 2014
  • To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.

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