• Journal of Biomedical Engineering Research
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• v.18 no.3
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• pp.307-313
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• 1997

he photoconductive gain mechanism in amorphus silicon devices was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and i-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales : one for short pulses of visible light(<$1{\mu}sec$) which simulate the transit of energetic charged particles or ${\gamma}$-rays, and the other for rather long pulses of light(1msec) which simulate x-ray exposure in medical imaging, We used two definitions of phtoconductive gain : current gain and charge gain which is an integration of the current gain. We obtained typical charge gains of 3~9 for short pulses and a few hundreds for long pulses at a dark current density level of 10mA/$cm^2$. Various gain results are discussed in terms of the device structure, applied bias and dark current density.

• Journal of Radiation Protection and Research
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• v.24 no.3
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• pp.161-170
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• 1999

System performances in terms of image quality between an amorphous silicon DR system and a conventional film-screen system were evaluated. Various aspects of image quality MTF (modulation transfer function), NPS (noise power spectrum), SNR(signal-to-noise ratio) and contrast were measured and calculated. The MTF of the DR system was comparable to the film-screen systems. The noise was mainly dominated by the quantum mottle in both systems and the electronic noise was found in the DR system. The contrast of the DR system was better than the film-screen systems by virtue of high sensitivity and image processing. Compared to the film-screen systems in general radiography, the DR system had similar resolution and showed better contrast with the same exposure condition after contrast manipulation. The results of this study provide some useful information about the performance of the DR system in connection with medical applications.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.457-460
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• 1997

The photoconductive gain mechanism in various types of hydrogenated amorphous silicon devices, such as p-i-n, n-i-n and n-i-p-i-n structures was investigated in connection with applications to radiation detection. We measured the photoconductive gain in two time scales: one for short pulses of visible light $(<1{\mu}sec)$ which simulate the transit of energetic charged particles, and the other for rather long pulses of light $(\sim1msec)$ which simulate x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of $3\sim9$ for short pulses and a few hundred for long pulses at a dark current density level of $10mA/cm^2$.