• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.112-117
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• 2000

We inserted CoO layer in NiO spin-valves to improve on magnetoresistance and exchange coupling field. The magnetoresistance ratio was increased from 4.5 % to 5.5 % with the increase of CoO thickness. We can not find the dependence between (111) texture and exchange coupling by the measurement of XRD of CoO/NiO spin-valves. The surface roughness of CoO layer, 6.1 $\AA$ is twice more than that of NiO layer, 3.1 $\AA$. The increase of exchange coupling field and coercive field in the CoO/NiO spin-valves will be due to increasing roughness. We prepared the NiO/CoO/NiO/CoO/NiO spin-valves to reduce coercive field and the coercive field decreased from 110 Oe to 50 Oe, and the coupling field is not changed from 70 Oe.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.104-108
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• 2001

The effect of specular electron scattering on natural oxidation of free layer in NiO spin valves have been investigated. The magnetoresistance (MR) ratio and the exchange biasing field ( $H_{ex}$) of NiO(600 $\AA$)Ni$_{81}$$Fe_{19}$(50$\AA$)/Co(7 $\AA$)/Cu(20 $\AA$)/Co(7 $\AA$)Ni$_{81}$$Fe_{19}$(70 $\AA$) spin valves were increased from 4.9 % to 7.3 %, and 110 Oe to 170 Oe after natural oxidation in the atmosphere for 80 days, respectively. The sheet resistivity p decreased from 28$\mu$$\Omega$m to 17$\mu$$\Omega$m, but $\Delta$$\rho$ did not almost change after the oxidation. The spin valves enhanced by the specular electron scattering in the natural]y Co/NiFe/NiFe $O_{x}$ free layer were confirmed from the depth profiles using Auger electron spectroscopy.scopy..

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1539-1546
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• 2011

Halon which is one of the typical fire extinguishing agents for special purposes was banned not only to use but to manufacture because it destroys the earth's ozone layer. There have been many efforts to find or create Halon alternatives and Novec1230 which is one of the eco-friendly fire extinguishing agents is nominated. In this paper 6 kinds of valve structures were suggested to apply Novec1230 to fire extinguishing agents for railroad vehicles as Novec1230 needs different valve specifications from Halon and spray shapes and action time were compared and measured. As the results, the extinguishing times of A type and F type valves are 20% faster than the other 4 types, and 178% faster than MIL-DTL-62547(USA). Therefore, they can be suggested to the eco-friendly extinguishing agents and Novec1230.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.227-231
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• 2008

Magnetic and structural properties of CoFeZr alloy films as a function of Zr concentration and magnetoresistive properties of spin valves incorporated with amorphous CoFeZr alloy films have been studied. Magnetization and coercivity of CoFeZr alloy films decreased as the Zr content increased. A single amorphous CoFeZr phase was formed when the Zr content is about above 18 at%. Magnetoresistance ratio and exchange coupling field of spin valves with amorphous CoFeZr were reduced slightly as compared with spin valves with CoFe because the resistance of amophous CoFeZr is higher than that of crystalline CoFe. However, the ${\Delta}{\rho}$ of spin valves with amorphous CoFeZr was improved due to reduction of current shunting.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Ceramist
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• v.2 no.4
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• pp.35-46
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• 1999

GMR 재료의 응용은 매우 광범위하며 크게 세 분야로 대별할 수 있다. 첫째는 자기 재생 헤드로서 $10Gbit/in^2$ 이상의 고밀도 자기기록 기술에서는 필수 불가결한 재료이다. 둘째는 다양한 분야에 응용될 고감도 자기센서 분야이며, 셋째는 집접화된 자기저항메모리(MRAM) 분야이다. GMR 센서를 사용한 자기헤드는 이미 시판되고 있고 기존의 AMR 재료인 퍼멀로이에 비하여 3~20배 이상으로 신호준위가 크고 사용온도 범위에서 선형성 및 열적안정성도 우수한 것으로 보고되고 있다. MRAM의 경우에는 스핀밸브 GMR 및 TMR 소자를 사용한 연구가 한창 진행중이다. GMR 현상은 발견 된지 고작 10년 밖에 되지 않았으나 GMR 자기센서는 이미 상업적으로 개발되어 응용되고 있다. 이러한 실질적인 응용에 유리한 고지를 선점하고 있는 것은 이방성결합형 스핀밸브 다층박막 구조로서 그 내구성과 특성 향상을 위한 연구가 다양하게 시도되고 있다. GMR현상의 발견은 자성재료분야 연구 및 응용에 있어 새로운 전기를 마련하였으며 특히 자성과 이동현상이 연계된 분야로서 소위 "Magneto-electronics" 또는 "Spintronics" 라는 [51] 새로운 미래기술의 장이 열리고 있다. 현재의 반도체 중심의 "Microelectronics" 기술에서는 전자와 전자공공을 이용하는 기술이라면 "Magneto-electronics" 기술에서는 스핀${\uparrow}$ 및 스핀${\downarrow}$의 두 종류의 전자를 이용하게 된다. 자성체와 도체를 접목한 스핀 트랜지스터 또는 자성체와 반도체를 접목한 스핀-polarized FET(field effect transistor) 등의 새로운 개념의 magnetoelectronics 소자가 창출되고 있다. 따라서 자기이동 현상의 기초 연구, 재료 측면의 연구 및 헤드, MRAM, 센서 등의 응용기술연구가 국내에서 활발하게 이루어져 21세기 새로운 자성전자(magneto-electronics)소자 응용에 경쟁력을 키워야 할 것이다.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.37 no.4
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• pp.296-301
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• 2001

Electro-Rheological (ER) fluids belong to a class of colloidal suspensions whose global characteristics can be controlled by the imposition of an appropriate external electrical field upon the fluid domain. The ER fluids for smart hydraulic system are a class of colloidal dispersion which exhibit large reversible changes in their rheological behavior when subjected to external electrical fields. This paper presents experimental results on mechanical properties of an ER fluids subjected to electrical fatigues. As a first step, ER fluid is made of methyl cellulose(MC) ingredient choosing 25% of particle weight-concentration. Following the construction of test for mechanical properties of ER fluid, the shear stress, dynamic yield stress and current density of the ER fluids are experimentally distilled as a function of electric field cycles. The mechanical properties test of operated ER fluids are distilled and compared with those of unused ER fluids.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.24-29
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• 2002

It was observed that exchange bias field was increased with smooth surface and better ${\gamma}$-FeMn formation. Sputtering conditions were varied for the control of the surface roughness and ${\gamma}$-FeMn formation. From the results of Cu deposition as underlayer, it was found that ${\gamma}$-FeMn formation was closely related with the thickness of underlayer. After heat treatment, exchange bias field was increased over three times. This improvement was likely that the crystallites of ${\gamma}$-FeMn were well formed. In Co/Cu/Co/FeMn spin valve structure, magnetoresistance was increased over 1.4 times through the heat treatment. This was due to the disappearance of Co/Cu intermixed dead layer and removal of defect, and this was examined by AES analysis.