• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.5
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• pp.1061-1066
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• 2012

A digital memory has been widely used as a device for storing information due to its reliable, fast and relatively simple control circuit. However, the storage of the digital memory will be limited by the inablility to make smaller linewidths. One way to dramatically increase the storeage capability of the memory is to change the type of stored data from digital to analog. The analog memory fabricated in a standard single poly 0.6um CMOS process has been developed. Single cell and adjacent circuit block for programming have been designed and characterized. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and image and sound memory.