• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.35 no.3
• /
• pp.267-272
• /
• 2011

We analyzed the wear characterization of $Si_3N_4$ ceramics according to the amount of added $SiO_2$ nanocolloid. The test specimen was prepared by hot-press sintering at 35 MPa and 2123 K in an $N_2$ gas atmosphere for 1 h. A wear test was performed with a block-on-ring tester, and the test conditions were as follows: (1) the ring with a diameter of 35 mm had a rotational speed of 50 rpm; (2) the load was 9.8 N; and (3) the temperature was $25^{\circ}C$. The test results show that $Si_3N_4$ ceramics have a friction coefficient of about 1.0 and a wear loss of about 0.02 mm. Of the specimens used this study, the test specimen with 1.3 wt% of added $SiO_2$ nanocolloid has the best wear resistance because it has the lowest friction coefficient and the smallest wear loss. This specimen also has the highest Vickers hardness and bending strength. In this study, the friction coefficient is inversely proportional to the hardness and bending strength.

• Journal of the Korean Vacuum Society
• /
• v.20 no.5
• /
• pp.339-344
• /
• 2011

The Ohmic contact of Ti/Au metals on n-type ZnO thin film deposited on c-plane sapphire substrates by pulsed laser deposition was investigated by TLM (transfer length method) patterns. The Ti/Au metal films with thickness of 35 nm and 90 nm were deposited by electron-beam evaporator and thermal evaporator, respectively. By using the photo-lithography method, the $100{\times}100{\mu}m^2$ TLM patterns with $6{\sim}61{\mu}m$ gaps were formed. To improve the electrical properties as well as to decrease an interface states and stress between metal and semiconductor, the post-annelaing process was done in oxygen ambient by rapid thermal annealing system at temperature of $100{\sim}500^{\circ}C$ for 1 min. In this study, it appeared that the minimum specific contact resistivity shows about $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$ in $300^{\circ}C$ annealed sample, which may be originated from formation of oxygen vacancies of ZnO during an oxidation of Ti metal at the interface of Ohmic contacts.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.10 no.6
• /
• pp.62-72
• /
• 1996

In this paper, ozonizer using U-type lamp(Olamp) has been designed and manufactured, which can perform a role of lighting source and ozonizer by using photo and chemical methods. The discharge, spectrum, illuminance, ozone concentration, ozone generation, ozone yield and sterilization characteristics of Olamp have been studied. The important conclusions obtained from this paper can be summa'||'&'||'not;rized as follows. As a result of spectrum characteristics for Olamp, ultraviolet ray of a short wave'||'&'||'not;lengths and a visible ray are radiated. The illuminance of Olamp was found to be useful for "color distinctive and intermittent works in the dark working spaces" in accordance with KS A 3011. The ozone concentration of gaseous phase is inversely proportional to quality of supplied gas. Also, ozone conce tration and generation of gaseous phase are rised more commercial oxygen gas than those trial air gas for constant quality of supplied gas. Ozone generation and ozone yield of gaseous phase are proportion'||'&'||'not;al to ozone concentration of gaseous phase. The characteristics of liquid ozone concentration at distilled water are proportional to circulating velocity of fermentation chamber and ozone concentration of gas'||'&'||'not;eous phase. As a result, the sterilization characteristics of Escherichia coli have been obtained more than 97[ % J.

• Korean Journal of Materials Research
• /
• v.2 no.3
• /
• pp.180-190
• /
• 1992

Some solutions to several major problems in ZMR such as agglomeration of polysilicon, slips and local substrate melting are described. Experiments are performed with varying polysilicon thickness and capping oxide thickness. The aggmeration can be eliminated when nitrogen is introduced at the capping oxide layer-to-polysilicon interface and polysilicon-to-buried oxide layer interface by annealing the SOI samples at $1100^{\circ}$ in $NH_3$ ambient for three hours. The slips and local substrate melting are removed when the back surface of silicon substrate is sandblasted to produce the back surface roughness of about $20{\mu}m$. The subboundary spacing increases with increasing polysilicon thickness and the uniformity of recrystallized SOI film thickness improves with increasing capping oxide thickness, improving the quality of recrystallized SOI film. When the polysilicon thickness is about $1.0{\mu}m$ and the capping oxide thickness is $2.5{\mu}m$, the thickness variation of the recrystallized SOI film is about ${\pm}200{\AA}$ and the subboundary spacing is about $70-120{\mu}m$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.2 no.1
• /
• pp.10-19
• /
• 1992

Mn - Zn Ferrite has physical properties of the high initial permeability, saturation magnetic flux density, and low loss factor as a representative magnetic material of soft ferrites, in addition the mechanical property is excellent as a single crystal. Therefore it is important electronic components and used for VTR Head. Mn - Zn Ferrite single crystals with the diameter 8mm were grown in atmosphere mixed with $O_2$ and Ar gas by the Floating Zone(FZ) method that impurities can not be incorporated to the crystals because of not-using the crucible to put in the melt, and the sharp temperature gradient results from making a focus at one point utilizing the infrared ray emitted from the halogen lamp as a heat source. During the crystal growing, the highest temperature of melting area was maintained to be $1650^{\circ}C$, growth rate and rotation rate were 10 mm/hr, 20 rpm respectively. The phases and the growth directions of crystals were determined from the analysis of X RD patterns, Laue, TEM diffraction patterns and etch pit shapes were observed by the optical microscope through the chemical etching. The corelation of optimum conditions for acquiring the better crystals was found out with the growth rate, the length and diameter of melt at the interface according to the diameter of feed rod, and the patterns of growing interface also studied.

• Applied Chemistry for Engineering
• /
• v.8 no.3
• /
• pp.430-437
• /
• 1997

Uranyl-peroxide compound was prepared by the reaction of excess hydrogen peroxide solution and trace uranium in filtrate from nuclear fuel conversion plant. The $CO_3{^{2-}}$ in filtrate was removed first by heating more than $98^{\circ}C$, because uranyl-peroxide compound could not be precipitated by $CO_3{^{2-}}$ remaining in filtrate. The optimum condition for uranyl-peroxide compound was ageing for 1 hr after controling the pH with $NH_3$ gas and adding the excess $H_2O_2$ of 10ml/lit.-filtrate. Uranium concentration in the filtrate was appeared to 3 ppm after the precipitation of uranyl-peroxide compound, and the chemical composition of this compound was analyzed to $UO_4{\cdot}2NH_4F$ with FT-IR, X-ray diffractometry, TG and chemical analysis. Also, this fine particle, about $1{\sim}2{\mu}m$, could be grown up to $4{\mu}m$ at pH 9.5 and $60^{\circ}C$. The separation efficiency of precipitate from mother liquor was increased with increase of pH and reaction temperature. Otherwise, the crystal form of this particle showed octahedral by SEM and XRD, and $U_3O_8$ powder was obtained by thermal decomposition at $650^{\circ}C$ in air atmosphere.

• Journal of the Korean Ceramic Society
• /
• v.39 no.5
• /
• pp.503-510
• /
• 2002

Silicon carbide candle filters for the pressurized fluidized bed combustion system were fabricated by extrusion process. Carbon black was added to control the porosity. Inorganic additives such as clay and calcium carbonate were added to exhibit appropriate strength. Silicon carbide layer with a finer pore size (mean pore diameter ~$10{\mu}m$) was coated on the silicon carbide support layer (mean pore diameter ~$47{\mu}m$, porosity ∼40%). After that, the filter was sintered at 1400${\circ}C$ in air. We evaluated the filtration performances of the filter at 500${\circ}C$ and $5kgf/cm^2$ of pressure. As a result, high separation efficiency, >99.999% was measured. It is expected that silicon carbide candle filter can be successfully used for the pressurized fluidized bed combustion system.

• Journal of the Korean Ceramic Society
• /
• v.39 no.5
• /
• pp.479-483
• /
• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

• Journal of the Korean Ceramic Society
• /
• v.41 no.5
• /
• pp.370-374
• /
• 2004

Sr$_{l-x}$Ba$_{x}$Al$_2$O$_4$:Eu (x = 0, 0.1, 0.2, and 0.3 mol) phosphor was synthesized by the hydrothermal method and its properties of photoluminescence and long-afterglow were investigated. The mixtures of Sr(NO$_3$)$_2$, Al(NO$_3$)$_3$9$H_2O$, and Eu(NO$_3$)$_3$$.$6$H_2O$ salts dissolved in distilled water, after controlling their pH by NH$_4$OH solution, put into an Autoclave reactor with high temperature and pressure to react. Such synthesized SrAl$_2$O$_4$:Eu powders showed homogeneous and ultra-fine particles of sub-micron size. In order to have the photoluminescence characteristic, powders were heat treated at 1100 -140$0^{\circ}C$ for 2 h in Ar/H$_2$ reduction atmosphere. Photoluminescence spectra showed a excitation along the wide wavelength of 250 ∼ 450 nm, and broaden emission with maxima peak at 520 nm. Also, it showed a good long afterglow with decaying over 1000 sec after excitation illumination for 10 min. In addition, the microstructure and crystal structure of SrAl$_2$O$_4$:Eu powders were investigated by an SEM and XRD, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.1
• /
• pp.77-85
• /
• 2004

To evaluate the effect of plasma cleaning on the soldering reliability the plasma cleaning using Ar-10vol%$H_2$ gas was applied on a UBM(Under Bump Metallization). The UBM consisted of Au/ Cu/ Ni/ Al layers which were deposited on a Si-wafer with 20 nm/ 4 $\mu\textrm{m}$/ 4 $\mu\textrm{m}$/ 0.4 $\mu\textrm{m}$ thickness respectively. Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-37%Pb solder balls sized of 500 $\mu\textrm{m}$ in diameter were used. Solder balls on the UBM were plasma reflowed under Ar-10%$H_2$ plasma (with or without plasma cleaning). They were compared with air reflowed solder balls with flux. The spreading ratios of plasma reflowed solder with plasma cleaning was 20-40% higher than that of plasma reflowed solder without plasma cleaning. The shear strength of plasma reflowed solder with plasma cleaning was about 58-65MPa. It showed 60-80% higher than that of plasma reflowed solder without plasma cleaning and 15-35% higher than that of air reflowed solder. Thus it was believed that plasma cleaning for the UBM using Ar-10vol%$H_2$ gas was considerably effective for the improvement of the strength of solder ball.