• Title/Summary/Keyword: 복소 유전상수

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Electromagnetic Scattering Resonances on a Periodic Strip Grating on a Grounded Dielectric Slab: Bragg Blazing Phenomena of TM Polarization Case (접지된 유전체 슬랩 위에 위치한 주기적인 스트립 격자구조에서의 전자기적 산란공진;TM편파 경우의 Bragg Blazing 현상)

  • 조웅희;홍재표;김종규;조영기
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.8
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    • pp.1363-1375
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    • 2000
  • The electromagnetic scattering characteristics by a periodic strip grating on a grounded dielectric slab for TM polarization case are examined from the viewpoints of both the reflection grating and the leaky wave antenna problems. Numerical results far two kinds of Bragg blazing (resonance type and non-resonance type) phenomena are given and some discussions on the properties(complex propagation constants, scattering characteristics, and distributions of strip current density) are presented. The comparison of the Bragg blazing phenomena between TM and TE polarization cases are also given in detail.

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Thickness Measurement of Nanogate Oxide Films by Spectroscopic Ellipsometry (SE를 사용한 나노게이트 산화막의 두께측정)

  • 조현모;조용재;이윤우;이인원;김현종;김상열
    • Proceedings of the Korea Crystallographic Association Conference
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    • 2002.11a
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    • pp.40-41
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    • 2002
  • 차세대 반도체 및 나노소자 산업에 대한 국제적 기술은 고밀도 직접화의 추세에 따라서 .게이트 산화막의 두께가 급속히 작아지는 추세이다. 지금까지 이산화규소(A1₂O₃)가 게이트 산화막으로 주로 사용되어 왔으나 점차 SiON 혹은 high k 박막으로 바뀌고 있다. 본 연구에서는 차세대 반도체 소자에 사용될 게이트 산화막 물질인 SiON 박막과 Al₂O₃박막에 대한 SE(Spectroscopic Ellipsometry)분석 모델을 확립하였고, SE 측정결과를 TEM, MEIS, XRR의 결과들과 비교하였다. SiON 박막의 굴절률 값은 Si₃N₄와 SiO₂가 물리적으로 혼합되어 있다고 가정하여 Bruggeman effective medium approximation을 사용하여 구하였다. 동일한 시료를 절단하여 TEM, MEIS, 그리고 XRR에 의하여 SiON 박막의 두께를 측정하였으며, 그 결과 SE와 XRR에 의해 얻어진 박막두께가 TEM과 MEIS의 결과 값보다 약 0.5 nm 크게 주어짐을 알 수 있었다(Table 1 참조). 본 연구결과는 비파괴적이며 비접촉식 측정방법인 SE가 2~4nm 두께의 초미세 SiON 박막의 두께와 N 농도의 상대적 값을 빠르고 쉽게 구할 수 있는 유용한 측정방법 임을 보여주었다. 기존의 게이트 산화물인 SiO₂를 대체할 후보 물질들 중의 하나인 A1₂O₃의 유전함수를 구하기 위하여 8 inch, p-type 실리콘 기판 위에 성장된 5 nm, 10 nm, 및 20 nm 두께의 A1₂O₃ 박막의 유전함수와 두께를 측정하였다. 이 시료들에 대한 SE data는 vacuum-UV spectroscopic ellipsometer를 사용하여 세 개의 입사각에서 0.75 eV에서 8.75 eV까지 0.05 eV 간격으로 측정되었다. A1₂O₃ 박막의 유전함수와 두께를 얻기 위하여 공기층/A1₂O₃ 박막/Si 기판으로 구성된 3상계 모델을 사용하였다. Si 기판에 대한 복소 유전함수는 문헌상의 값(1)을 사용하였고, A1₂O₃ 박막의 유전함수는 5개의 미지상수를 갖는 Tauc- Lorentz(TL) 분산함수(2)를 사용하였다. A1₂O₃ 박막의 경우 두께가 증가함에 따라서 굴절률이 커짐을 알 수 있었다.

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Microwave Absorbing Properties of Silver-coated Ni-Zn Ferrite Spheres Prepared by Electroless Plating (무전해 도금법에 의해 제조된 은 피복 Ni-Zn Ferrite Sphere의 전파흡수특성)

  • Kim, Jong-Hyuk;Kim, Jae-Woong;Kim, Sung-Soo
    • Journal of the Korean Magnetics Society
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    • v.15 no.3
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    • pp.202-206
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    • 2005
  • The present investigation provides an electromagnetic radiation absorptive composition which comprises silver-coated ferrite microspheres dispersed in silicon rubber matrix for the aim of thin microwave absorber in GHz frequencies. Ni-Zn ferrite spheres with $50{\mu}m$ size in average were prepared by spray-drying and sintering at $1130^{\circ}C$. Conductive silver layer was plated on ferrite spheres by electroless plating. Conductive Ni-Zn ferrite sphere with uniform silver layer were obtained in the concentration of 10 g/L $AgNO_3$ per 20 g ferrite spheres. For this powder, electrical resistance is reduced as low as $10^{-2}\~10^{-3}\;\Omega$. The most sensitive material parameters with silver plating is real and imaginary parts of complex permittivity. The conductive Ni-Zn ferrite spheres have large values of dielectric constant. Due to this high dielectric constant of microspheres, matching thickness is reduced to as low as 2 mm at the frequency of 7 GHz, which is much thinner than conventional ferrite absorbers.

Spectrum response of frequency range for the unsaturated soil by salinity concentration (주파수영역 스펙트럼 반응을 이용한 불포화토의 염분농도 측정에 관한 연구)

  • Kim, Man-Il;Jeong, Gyo-Cheol;Kim, Hyoung-Soo;Suk, Hee-Jun
    • Proceedings of the Korean Geotechical Society Conference
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    • 2005.10a
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    • pp.389-394
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    • 2005
  • In this study we carried out to evaluate the salinity concentration and volumetric water content of unsaturated soil column using frequency domain Reflectometry with vector network analyzer (FDR-V) measurement system. All of experiments were considered to the effect of temperature which ranges from l0$^{\circ}C$ to 50$^{\circ}C$ increasing the interval of l0$^{\circ}C$ controlled by the constant temperature container. From the results the responses of complex dielectric constant which consist of the real part and imaginary parts have the effect of volumetric water content and concentration of salinity at 1GHz. Use of derived equations (1) and (2) can be calculated the physical parameters such as volumetric water content and salinity concentration of unsaturated media by the responses of complex dielectric constant.

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Leg Fracture Recovery Monitoring Simulation using Dual T-type Defective Microstrip Patch Antenna (쌍 T-형 결함 마이크로스트립 패치 안테나를 활용한 다리 골절 회복 모니터링 모의실험)

  • Byung-Mun Kim;Lee-Ho Yun;Sang-Min Lee;Yeon-Taek Park;Jae-Pyo Hong
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.4
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    • pp.587-594
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    • 2023
  • In this paper, we present the design and optimization process of an on-body microstrip patch antenna with a paired T-type defect for monitoring fracture recovery of human legs. This antenna is designed to be light, thin and compact despite the improvement of return loss and bandwidth performance by adjusting the size of the T-type defect. The structure around the applied human leg is structured as a 5-layer dielectric plane, and the complex dielectric constant of each layer is calculated using the 4-pole Cole-Cole model parameters. In a normal case without bone fracture, the return loss of the on-body antenna is -66.71dB at 4.0196GHz, and the return loss difference ΔS11 is 37.95dB when the gallus layer have a length of 10.0mm, width of 1.0mme, and height of 2.0mm. A 3'rd degree polynomial is presented to predict the height of the gallus layer for the change in return loss, and the polynomial has a very high prediction suitability as RSS = 1.4751, R2 = 0.9988246, P-value = 0.0001841.