Search | Korea Science

Sim, Yong-gi;Cho, Seong-jin;Kim, Sung-hun;Park, Jun-hyun;Han, Jong-pyo
- Journal of Advanced Navigation Technology
- /
- v.21 no.5
- /
- pp.459-465
- /
- 2017
In this paper, we introduce the design consideration of the lightning induced transient protection circuit for the indirect lightning strike on the avionics equipment. The lightning induced surge voltage, which is so-called as indirect effects of lightning, may cause a functional failure or physical damage to the electrical and electronic equipment of aircraft. In order to protect the electrical and electronic equipment of aircraft from the indirect effects of lightning, we should analyze the effect of lightning strike on aircraft and consider applying protection design for each avionics device. However, lightning induced transient protection circuits can have unintended consequences because parasitic inductance elements are exist in PCB and TVS diodes. In this paper, we introduce the design method of the protection circuit considering the parasitic inductance of the protection circuit. In addition, we show the result of verification test performed to validate the protection circuits for indirect effects of lightning.
https://doi.org/10.12673/jant.2017.21.5.459 인용 PDF KSCI

김영길
- 발명특허
- /
- v.13 no.9 s.151
- /
- pp.34-35
- /
- 1988
'컴퓨터프로그램 보호법에 의하여 보호 및 등록대상 프로그램은 1987년 1월 1일 이후 창작된 프로그램에 한하여 보호되며, 외국인 프로그램은 세계저작권협약(UCC)이 발효된 1987년 10월 1일 이후 창작된 프로그램만이 보호되며 등록이 되고 있다.'
PDF

Choi, Jin-Young
- Journal of IKEEE
- /
- v.8 no.1 s.14
- /
- pp.136-144
- /
- 2004
From the AC analysis results utilizing a two dimensional device simulator, the ac equivalent-circuit modeling of the ESD protection devices is executed. It is explained that the ac equivalent circuit of the NMOS protection transistor is modeled by a rather complicated form and that, depending on the frequency range, the error can be large if it is modeled by a simple RC serial circuit. It is also shown that the ac equivalent circuit of the thyristor-type pnpn protection device can be modeled by a simple RC serial circuit. Based on the circuit simulations utilizing the extracted equivalent circuits, the effects of the parasitics in the protection device on the characteristics of LNA are examined when the LNA, which is one of the important RF circuits, is equipped with the protection device. It is explained that a large error can result in estimating the circuit characteristics if the NMOS protection transistor is modeled by a simple capacitor. It is also confirmed that the degradation of the LNA characteristics by incorporating the ESD protection device can be reduced a lot by adopting the suggested pnpn device.
PDF