• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.204-210
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• 2008

ZnO thin films were grown on a glass by RF sputtering system with RF power 100W and oxygen partial pressure of $0%{/sim}30%$. Elliptic constants were measured by using a phase modulated spectroscopic ellipsometer and analyzed with the Tauc-Lorentz dispersion formula and best fit method in the range of 1.5 to 3.8eV. Also, scanning electron microscope(SEM) was used for the analysis of surface crystallization condition. From elliptic constants spectra, optical constants, thickness and roughness of ZnO films were evaluated. Total thickness of ZnO films obtained by ellipsometry showed good agreement with SEM data. It was found that the grain size of the films were getting smaller with increasing oxygen partial pressure. Band-gap of ZnO films increase with the oxygen partial pressure. These findings clearly indicate that optical properties of ZnO films are strongly dependent on the oxygen partial pressure. It could be explained that increasing the oxygen partial pressure induced high crystalline imperfection in the ZnO films.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.51-54
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• 1999

Hydrogenated amorphous silicon (a-Si:H) films are fabricated by Argon radical annealing (ArRA). The deposition rate of continuously deposited a-Si:H film is 1.9 $\AA$/s. As ArRA time are increased to 0.5 and 1 minute, the deposition rate are increased to 2.8 $\AA$/s and 3.3 $\\AA$/s. The deposition rate of a-si:H films with 2 and 3 minutes ArRA time are 3.3 $\AA$/s. As the ArRA time is increased, the optical band gap and the hydrogen contents in the a-Si:H films are increased and slightly decreased. The light-induced degradation of ArRA treated a-Si:H films are less than that of continuously deposited a-Si:H film. The dark conductivity and the conductivity activation energy ($E_a$) of continuously deposited a-Si:H film are decreased to 1/25 in room temperature and increased to 0.09eV By 1 hour light soaking, respectively. The dark conductivity and $E_a$ of ArRA treated a-Si:H film decreased to 1/3 in room temperature and increased to 0.03eV by 1 hour light soaking, respectively. We could improve the stability of a-Si:H films under the light soaking by ArRA technique and discussed the microscopic process of ArRA technique.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.93-98
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• 2013

In this paper, four conducting polymers (poly[(N-butyl-phenothiazine)-sulfide] (PBPS), poly[(N-hexyl-phenothiazine)-sulfide] (PHPS), poly[(N-decyl-phenothiazine)-sulfide] (PDPS), and poly[(N-(2-ethylhexyl)-phenothiazine)-sulfide] (PEHPS)) were synthesized with a high temperature and high pressure reaction. The structures of synthesized polymers were confirmed by $^1H-NMR$ and characterized by UV-Vis, cyclic voltammetry, and GPC. From the UV-Vis absorption spectra, the ${\lambda}_{max}$ values of PBPS, PHPS, PDPS, and PEHPS were 338, 341, 340, and 334 nm, respectively and their optical band gaps were 3.11, 3.13, 3.16, and 3.05 eV, respectively. To evaluate the feasible applicability as a photovoltaic cell, the devices composed of for example, ITO/PEDOT : PSS/polymer (PBPS, PDPS) : $PC_{71}BM$ (1 : 3, w/w)/$BaF_2$/Ba/Al were fabricated using the blends of the PBPS and PDPS as a donor, and $PC_{71}BM$ as an acceptor. Then, the power conversion efficiencies (PCE) of devices were estimated as 0.076% of PBPS and 0.136% of PDPS by solar simulator.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.604-604
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• 2013

차세대 반도체 분야인 스핀트로닉스 소자의 필수적인 물질인 강자성-반도체 하이브리드 물질인 Dilute magnetic semiconductor (DMS)에 관한 연구가 최근 많은 관심을 가지고 있다. 그중에서 넓은 에너지 밴드 갭 에너지(3.37 eV)를 가지고 있고 상온에서 엑시톤 결합 에너지가 ~60 mV로 광전자 소자, 전계 디스플레이 에 응용이 가능한 물질인 ZnO는 최근에 전이금속을 도핑하여 상온에서 강자성 특성을 나타내어 활발한 연구가 이루어지고 있다. 그러나, 이 물질에 대한 특성과 자성의 원인 규명에 관한 연구는 논란이 되고 있다. 본 연구에서는 Mn이 도핑된 ZnO 나노 입자를 만들고, Mn 물질의 도핑 농도에 따른 ZnO 나노 입자의 구조, 크기 및 자기 구조를 측정하여 구조와 자성의 상관관계에 관한 연구하였다. ZnxMn1-xO 나노 입자는 화학적 졸-겔(sol-gel) 방법을 이용하여 준비하였다. ZnxMn1-xO 나노 입자의 크기 및 격자 구조적 특징은 XRD (X-ray diffraction)와 TEM (Transmission Electron Microscope), SEM (Scanning Electron Microscope), SANS (Small Angle Neutron Scattering)를 이용하여 측정하였고 물질의 자기적 특징은 SQUID를 이용하여 조사하였다. Mn 도핑이 증가함에 따라 격자간격이 커지고 나노 입자의 크기는 감소하였으며, Zn와 Mn의 성장 시, 비율이 9:1의 경우에 상온에서 강자성 특성이 나타남을 보았다. 그 이상의 Mn 도핑 비율에서는 상자성 특성이 나타남을 보았다. 본 연구를 통하여 스핀트로닉스 소자 응용을 위한 ZnO 나노 입자에 최적의 Mn 도핑 농도를 제시하고 나노 입자의 자기 특성 형성의 원인 및 모델을 제시하였다.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.193-199
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• 2000

The a-C : H films have been grown on the glass substrate by PECVD method, where plasma was generated with a 60 Hz line power source. The growth rate of films is found to be dependent of the partial pressure of $C_2H_2$. This growth rate is a little higher than that in which $CH_4$ instead of $C_2H_2$ is used. The transmittance is also much higher(95%). The optical energy gap of films is in the range of 1.4~1.8eV depending on the partial pressure of $C_2H_2$. However, this energy gap, which is 1.8eV, is found to be independent of the partial pressure of $C_2H_2$ for the thick films above $2000{\AA}$. The carbonization is checked from peak intensities of D ($sp^3$) and G($sp^2$) peaks in Roman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $C_2H_2$. Judging from above results, we can conclude that the best value for partial pressure of $C_2H_2$ in growing process of thick films is about 13.8%.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.5
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• pp.135-141
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• 2020

This paper summarizes the data of a monopole antenna with a sleeve structure that can be applied in various ways. Sleeve monopole antennas have broadband characteristics and are used for multi-frequency applications. The sleeve monopole antenna is composed of a vertical conductor, which is a radiator, and a sleeve having the same structure as a coaxial cable. The sleeve acts as a radiator and an open stub. The length of the sleeve should be 1/3~2/3 of the total length of the antenna. A monopole antenna having a sleeve structure is applicable to a vehicle wiper antenna. In addition, the case of applying this antenna to a broadband sleeve antenna using a loading coil, a broadband printed sleeve monopole antenna for an ISM band, a gap sleeve and a double sleeve, and a UWB planar monopole antenna using half cutting was summarized and analyzed in terms of structure and broadband.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.29-34
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• 2007

This paper presents a novel photonic bandgap (PBG) structure for size reduction and linearity improvement in power amplifier. The proposed structure is a two-dimensional (2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. Throughout the experi-mental results, this structure has more broad stopband and high suppression performance than conventional three cell PBG and distorted uniplanar compact-PBG (DUC-PBG). This new PBG structure can be applied with power amplifier for linearity improvement. The 3rd intermodulation distortion (IMD3) of the power amplifier using new PBG structure is -36.16 dBc for (code division multiple access) CDMA applications. Compared with power amplifier without the proposed PBG structure, improved IMD3 is -13.49 dBc.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.2
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• pp.71-82
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• 1984

A programme, called BIPOLE, for the numerical analysis of twotimensional n-p-n bipolar transistors was developed. It has included the SRH and Auger recolnbination processes, the mobility dependence on the impurity density and the electric field, and the band-gap narrowing effect. The finite difference equations of the fundamental semiconductor equations are formulated using Newton's method for Poisson's equation and the divergence theorem for the hole and electron continuity equations without physical restrictions. The matrix of the linearized equations is sparse, symmetric M-matrix. For the solution of the linearized equations ICCG method and Gummel's algorithm have been employed. The programme BIPOLE has been applied to various kinds of the steady-state problems of n-p-n transistors. For the examples of applications the variations of common emitter current gain, emitter and diffusion capacitances, and input and output characteristics are calculated. Three-dimensional representations of some D.C. physical quantities such as potential and charge carrier distributions were displayed. This programme will be used for the nome,rical analysis of the distortion phenom ana of two-dimensional n-p-n transistors. The BIPOLE programme is available for everyone.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.9
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• pp.49-54
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• 2008

In this paper, the power added efficiency(PAE) of class F power amplifier is improved by applying a new Photonic Bandgap (PBG) structure on the output of amplifier. The proposed spiral PBG structure is a two-dimensional (2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. This structure bas higher suppression performance at second harmonic. Also, It has a sharp skirt property. This new PBG structure can be applied with class F power amplifier for efficiency improvement. We obtained the PAE of 73.62 % for CDMA applications, and the PAE performance is improved as much as 6.2 % compared with that of a conventional class F power amplifier.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.210-210
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• 2010

저항 구조를 가진 유기 쌍안정성 소자는 비휘발성 기억 소자 중에서 구조가 간단하고 제작비용이 저렴하며 플렉시블이 용이한 장점 때문에 많은 연구가 진행되고 있다. 유기물/무기물 복합재료를 사용한 유기 쌍안정성 소자 제작에 대한 연구는 많이 진행되어 왔지만, 넓은 에너지 밴드 갭을 가진 $SnO_2$ 나노 입자가 삽입된 고분자 박막을 기반으로 제작한 유기 쌍안정성 소자에 대한 연구는 상대적으로 미흡하다. 본 연구에서는 Poly(methyl methacrylate) (PMMA) 박막 안에 분산된 $SnO_2$ 나노 입자를 사용하여 제작한 유기 쌍안정성 소자의 전기적인 특성을 관찰하였다. 소자를 제작하기 위해 나노 입자의 전구체인 Tin 2-ethylhexanoate (95%) 2.4 mmol을 dibutyl ether (99.3%) 10 ml에 용해시킨 후, 용매열 화학적 방법을 사용하여 용매 안에서 $SnO_2$ 나노 입자를 합성하였다. 용매 안에 들어있는 1 wt%의 $SnO_2$ 나노 입자와 100 mg의 PMMA를 2 ml의 클로로벤젠에 용해하여 고분자 용액을 제작하였다. 하부 전극 역할을 하는 indium tin oxide가 증착된 유리 기판 위에 고분자 용액을 스핀 코팅하고, 열을 가해 용매를 제거하여 $SnO_2$ 나노 입자가 분산되어 있는 PMMA 박막을 형성하였다. 그 위에 Al 전극을 증착하여 기억 소자를 완성하였다. 제작된 유기 쌍안정성 소자의 전류-전압 (I-V) 측정 결과에서는 동일한 전압에서 서로 크기가 다른 전류가 흐르는 I-V 곡선의 히스테리시스 특성이 나타났다. 그러나 $SnO_2$ 나노 입자가 없는 PMMA 박막으로 형성된 유기 쌍안정성 소자에서는 I-V 곡선의 히스테리시스 특성이 나타나지 않았다. 따라서 PMMA 박막 안에 삽입된 $SnO_2$ 나노 입자가 유기 쌍안정성 소자의 메모리 효과에 결정적인 영향을 준 것을 알 수 있었다. 전류-시간 측정 결과에서는 소자의 ON/OFF 비율이 시간에 따라 큰 변화 이 없이 1000 사이클 이상 지속적으로 유지 하고 있음을 보여 줌으로써 유기 쌍안정성 소자를 장시간 사용할 수 있음을 나타내 주었다.