• Title/Summary/Keyword: 방사선 선율

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Development and Application of the Semiconductor Neutron Radiation Detector (반도체 중성자 탐지소자 개발 및 응용)

  • Lee, Nam-Ho;Lee, Hong-Kyu;Youk, Young-Ho
    • Journal of the Korea Institute of Military Science and Technology
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    • v.14 no.2
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    • pp.299-304
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    • 2011
  • In this paper, we developed the semiconductor neutron radiation detector and the multi-purpose radiation detection technologies for the next generation military personal surveymeter. The PIN type semiconductor neutron detector and the prototype measure the neutron radiation dose upto 1,000cGy with ${\pm}20%$ error. It also have a good performance about the Gamma, Alpha and Beta radiation and MIL-STD-810F.

Optimized Design and Manufacture of Wideband Pulsed Gamma-ray Sensors (광대역 펄스감마선 탐지센서 최적화 설계 및 제작)

  • Jeong, Sang-hun;Lee, Nam-ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.1
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    • pp.223-228
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    • 2017
  • In this paper, we are proposing an optimal design of wideband pulsed type gamma-ray sensors. These sensors were manufactured based on the design results and after word electrical properties were analyzed. The sensor input parameters were derived on the basis of pulsed gamma-ray spectrum and time-dependent energy rate, and the output current which were derived on the basis of the sensor sensitivity control circuit. Pulsed gamma-ray sensors were designed using the TCAD simulators. The design results show that the optimal Epi layer thickness is 45um with the applied voltage 3.3V and the diameter is 2.0mm. The doping concentrations are as follows : N-type is an Arsenic as $1{\times}10^{19}/cm^3$, P-type is a Boron as $1{\times}10^{19}/cm^3$ and Epi layer is Phosphorus as $3.4{\times}10^{12}/cm^3$. The fabricated sensor was a leakage current, 12pA at voltage -3.3V and fully depleted mode at voltage -5V. A test result of pulsed radiation shows that the sensor gives out the optimal photocurrent.

Development and Testing of CdZnTe Detector for Pocket Surveymeter (CdZnTe 검출기를 이용한 개인용 Pocket Surveymeter의 제작 및 특성)

  • Lee, Hong-Kyu;Kang, Young-Il;Choi, Myung-Jin;Wang, Jin-Suk;Kim, Byung-Taik
    • Journal of Radiation Protection and Research
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    • v.21 no.1
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    • pp.1-7
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    • 1996
  • In this paper, we discussed the fabrication and characterization of bulk type CdZnTe detector for pocket surveymeter. The resistivity of CdZnTe single crystal grown by the High Pressure Bridgman method is in the mid of $10^9$ ohm-cm. The detector structure is Au/CdZnTe/Au and gold electrode is formed by electroless deposition method. Resolutions of 4.8keV and 2.2keV were observed at 22.2keV line of $^{109}Cd$ and 59.6keV line of $^{241}Am$ at room temperature, respectively. We also constructed the small size pocket surveymeter using home made CdZnTe detector. It shows the good linearity over a range from 1mR/hr to 10R/hr with deviation less than 5%. The sensitivity of the surveymeter developed is $2.2{\times}10^3 cps/Rad\;hr^{-1}$ for the 662keV of $^{l37}Cs\;{\gamma}-ray$.

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